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Atsugi, Japan

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Phoeton Corporation | Date: 2007-11-27

Metalworking machine tools; cutting machines for metalworking; metal fusion bonding machines; metal welding machines; metal melting machines; drilling machines for metalworking; glass working machines; cutting machines for glass working; drilling machines for glass working; glass fusion bonding machines; glass melting machines; drilling machines for plastic processing; cutting machines for plastic processing; plastic fusion bonding machines; removal machines for plastic processing to remove rubber, plastic and resin from the surface of metal; plastic melting machines; semiconductor manufacturing machines; drilling machines for rubber-goods manufacturing; cutting machines for rubber goods manufacturing; rubber fusion bonding machines; removal machines for rubber goods manufacturing to remove rubber, plastic and resin from the surface of metal. optical apparatus and instruments, namely, homogenizers and optical units, each being a component part of one of the following: metalworking machine tools, cutting machines for metalworking, metal fusion bonding machines, metal welding machines, metal melting machines, drilling machines for metalworking, glass working machines, cutting machines for glass working, drilling machines for glass working, glass fusion bonding machines, glass melting machines, drilling machines for plastic processing, cutting machines for plastic processing, plastic fusion bonding machines, removal machines for plastic processing to remove rubber, plastic and resin from the surface of metal, plastic melting machines, semiconductor manufacturing machines, drilling machines for rubber-goods manufacturing, cutting machines for rubber goods manufacturing, rubber fusion bonding machines, and removal machines for rubber goods manufacturing to remove rubber, plastic and resin from the surface of metal.


Kaneko S.,Kanagawa Industrial Technology Center | Kaneko S.,Tokyo Institute of Technology | Ito T.,Kanagawa Industrial Technology Center | Kato C.,Kanagawa Industrial Technology Center | And 8 more authors.
Optics and Lasers in Engineering | Year: 2013

After CW lasers scanned a target at high speed of 300 m/min, periodical nanostructure self-organized on the target surface. Unlike fiber-like structure fabricated by femtosecond laser, the periodic structure showed trench structures with flat bottoms. A theoretical simulation of thermal distribution of the target indicated the target temperature exceeds its melting point, which was verified by micro-Raman spectroscopy. The time dependent thermal distribution indicated the existence of threshold melting period to form the trench nanostructure. The nanostructure showed well-regulated gratings, and the precise periodicity emerged structural color and modified water-repellent on the target surface. © 2012 Elsevier Ltd.


Kaneko S.,Kanagawa Industrial Technology Center | Kaneko S.,Tokyo Institute of Technology | Ito T.,Kanagawa Industrial Technology Center | Yasui M.,Kanagawa Industrial Technology Center | And 7 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

We report periodic nanostructure on solid material irradiated by scanning continuous wave (CW) laser. Long periodic nano strip grating lines (nano-SGL) formed, not in a spot, but along the trace of the beam scan, literally parallel to each other with a at trough between the strip lines. The period of nanostructure was varied with the laser power between 500 nm and 800 nm, which equals to wavelengths used for laser scanning of green and infrared lasers. Thermal simulation and Raman spectra indicated the temperature of target exceeded the melting temperature to form the periodic nanostructure on target materials. © 2012 SPIE.


Kaneko S.,Kanagawa Industrial Technology Center | Ito T.,Kanagawa Industrial Technology Center | Akiyama K.,Kanagawa Industrial Technology Center | Yasui M.,Kanagawa Industrial Technology Center | And 8 more authors.
World Academy of Science, Engineering and Technology | Year: 2011

As application of re-activation of backside on power device Insulated Gate Bipolar Transistor (IGBT), laser annealing was employed to irradiate amorphous silicon substrate, and resistivities were measured using four point probe measurement. For annealing the amorphous silicon two lasers were used at wavelength of visible green (532 nm) together with Infrared (793 nm). While the green laser efficiently increased temperature at top surface the Infrared laser reached more deep inside and was effective for melting the top surface. A finite element method was employed to evaluate time dependent thermal distribution in silicon substrate.


Kaneko S.,Kanagawa Industrial Technology Center | Kaneko S.,Tokyo Institute of Technology | Ito T.,Kanagawa Industrial Technology Center | Akiyama K.,Kanagawa Industrial Technology Center | And 8 more authors.
Nanotechnology | Year: 2011

After a laser annealing experiment on Si wafer, we found an asymmetric sheet resistance on the surface of the wafer. Periodic nano-strip grating lines (nano-SGLs) were self-organized along the trace of one-time scanning of the continuous wave (CW) laser. Depending on laser power, the nano-trench formed with a period ranging from 500 to 800nm with a flat trough between trench structures. This simple method of combining the scanning laser with high scanning speed of 300mmin-1 promises a large area of nanostructure fabrication with a high output. As a demonstration of the versatile method, concentric circles were drawn on silicon substrate rotated by a personal computer (PC) cooling fan. Even with such a simple system, the nano-SGL showed iridescence from the concentric circles. © 2011 IOP Publishing Ltd.

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