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Chen C.-C.A.,National Taiwan University of Science and Technology | Young H.-T.,National Taiwan University | Chiou C.-H.,National Taiwan University of Science and Technology | Xue M.-Y.,National Taiwan University of Science and Technology | Pan C.-L.,Phoenix Silicon International Corporation
China Semiconductor Technology International Conference 2016, CSTIC 2016 | Year: 2016

This paper aims to study the chemical mechanical polishing (CMP) of glass wafer with effect of colloidal silica (SiO2) abrasive in different CMP process parameters. Conventional glass polishing usually adopts ceria (CeO2) abrasive due to its high material removal rate (MRR). However, with the development of 3D stacking integrated circuits (3DS-IC), the demand of glass wafer for trench-glass-via (TGV) instead of trench-silicon-via (TSV) has very tight specification of surface roughness and near-free-defects by CMP for next step of lithography process. Thus the ceria abrasive may not satisfy the surface quality as required in applications of glass wafer or TGV. The colloidal silica of SiO2 abrasive is considered because of its uniform particle size and familiar application in CMP for silicon wafer and thin film devices. In this study, viscosity and pH value of SiO2 slurry have been tested to characterize slurry properties. Some 40 × 40mm sliced substrates from 200mm (8) glass wafers have been used for polishing characteristics and evaluation of CMP process. Relationship between the process parameters, including down pressure, platen speed and slurry flow rate have been investigated. Performance of CMP tests including MRR, surface roughness and non-uniformity have been obtained for concluding the slurry performance for CMP of glass wafers. © 2016 IEEE. Source

Yang M.,Phoenix Silicon International Corporation
2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013 | Year: 2013

This paper presents a Lithium Iron Phosphate Battery for Cloud Data Storage System and Telecom Uninterruptible Power System with the following characteristics: free of lead and sulfuric acid pollution, free of unsafe Lithium-Cobalt, very long calendar life, projected cycle life of more than 10 years, tolerant of high operating temperature, impressive high-rate charge and discharge performance, 66% lighter than lead-acid given identical capacity, compatible with existing lead-acid charger provided with the same charging voltage. These features meet the energy requirement of the cloud data storage system and telecom uninterruptible power system. © 2013 IEEE. Source

Deng M.-J.,National Chung Hsing University | Tsai D.-C.,National Chung Hsing University | Ho W.-H.,Taiwan Textile Research Institute | Li C.-F.,Phoenix Silicon International Corporation | Shieu F.-S.,National Chung Hsing University
Applied Surface Science | Year: 2013

Deposited of crystalline tin (Sn) coatings on mesocarbon microbead (MCMB) powder as anodes of lithium ion (Li-ion) battery was conducted in the SnSO 4 solution by a cathodic electrochemical synthesis. The Sn-coated MCMB specimens were characterized by X-ray diffraction, scanning electron microscopy, and charge/discharge tests. The synthesis condition of Sn-coated MCMB was optimized by considering the agglomeration, size, and adhesion of the samples to the current collectors in the battery. The Sn-coated MCMB electrodes exhibit increased reversible capacity without sacrificing its cycling behavior, compared with bare MCMB electrodes. It is concluded that electrolysis-deposited Sn-coated MCMB electrodes may emerge as a practical and promising anode material for secondary Li-ion batteries. © 2013 Elsevier B.V. All rights reserved. Source

Phoenix Silicon International Corporation | Date: 2010-01-29

The present invention discloses a coating layer removing apparatus and a method for the same. The apparatus of the present invention comprises a transport device displacing an electrode plate; a laser device having a laser head arranged above the displacement path of the electrode plate; and a control center electrically connected to the transport device and the laser device. The method of the present invention comprises mounting an electrode plate on the transport device; using the control center to set the speed of displacing the electrode plate, and program the time interval, count and penetration depths of the laser beams; and using the device of the present invention to form exposed areas equidistantly on the electrode plate. The apparatus of the present invention automatically removes a coating layer with a laser beam without directly contacting the electrode plate. Therefore, the present invention can fast form exposed areas of high quality.

Phoenix Silicon International Corporation | Date: 2010-01-22

The present invention discloses a protection structure for cutting an electrode strip, which comprises an electrode strip having at least one cutting channel; and two adhesive tapes respectively stuck to the upper and lower surfaces of the cutting channel, and which can effectively prevent from the formation of burrs and the shattering of solidified compounds in cutting the electrode strips, whereby are promoted the quality, stability and reliability of products. Further, the protection structure for cutting an electrode strip of the present invention also functions as an indicator to identify the cutting site.

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