Phicot Inc.

Palo Alto, CA, United States

Phicot Inc.

Palo Alto, CA, United States
SEARCH FILTERS
Time filter
Source Type

Jeans A.,Hewlett - Packard | Almanza-Workman M.,Phicot Inc. | Cobene R.,Hewlett - Packard | Elder R.,Hewlett - Packard | And 18 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

A solution to the problems of roll-to-roll lithography on flexible substrates is presented. We have developed a roll-toroll imprint lithography technique to fabricate active matrix transistor backplanes on flexible webs of polyimide that have a blanket material stack of metals, dielectrics, and semiconductors. Imprint lithography produces a multi-level 3- dimensional mask that is then successively etched to pattern the underlying layers into the desired structures. This process, Self-Aligned Imprint Lithography (SAIL), solves the layer-to-layer alignment problem because all masking levels are created with one imprint step. The processes and equipment required for complete roll-to-roll SAIL fabrication will be described. Emphasis will be placed on the advances in the roll-to-roll imprint process which have enabled us to produce working transistor arrays. © 2010 Copyright SPIE - The International Society for Optical Engineering.


Elder R.E.,Hewlett - Packard | Jackson W.B.,Hewlett - Packard | Jam M.,Hewlett - Packard | Jeans A.,Hewlett - Packard | And 11 more authors.
Digest of Technical Papers - SID International Symposium | Year: 2011

HP and Phicot are making a fully roll-to roll fabricated display for a solar powered wrist display. We have developed methods for electrical testing of display backplanes on flexible substrates which are not bonded to a carrier. This has enabled improvement of yield through rapid electrical test feedback. © 2011 SID.


Almanza-Workman A.M.,Phicot Inc. | Jeans A.,Hewlett - Packard | Braymen S.,AMES Inc. | Elder R.E.,Hewlett - Packard | And 20 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

Good surface quality of plastic substrates is essential to reduce pixel defects during roll-to-roll fabrication of flexible display active matrix backplanes. Standard polyimide substrates have a high density of "bumps" from fillers and belt marks and other defects from dust and surface scratching. Some of these defects could be the source of shunts in dielectrics. The gate dielectric must prevent shorts between the source/drain and the gate in the transistors, resist shorts in the hold capacitor and stop shorts in the data/gate line crossovers in active matrix backplanes fabricated by self-aligned imprint lithography (SAIL) roll-to-roll processes. Otherwise data and gate lines will become shorted creating line or pixel defects. In this paper, we discuss the development of a proprietary UV curable planarization material that can be coated by roll-to-roll processes. This material was engineered to have low shrinkage, excellent adhesion to polyimide, high dry etch resistance, and great chemical and thermal stability. Results from PECVD deposition of an amorphous silicon stack on the planarized polyimide and compatibility with roll-to-roll processes to fabricate active matrix backplanes are also discussed. The effect of the planarization on defects in the stack, shunts in the dielectric and curvature of finished arrays will also be described. © 2012 Copyright SPIE.


Almanza-Workman A.M.,Phicot Inc. | Taussig C.P.,Hewlett - Packard | Jeans A.H.,Hewlett - Packard | Cobene R.L.,Hewlett - Packard
Journal of Materials Chemistry | Year: 2011

Self-aligned imprint lithography (SAIL) enables the patterning and alignment of submicron-sized features on metre-scaled flexible substrates in the roll-to roll (R2R) environment. SAIL solves the problem of precision interlayer registry on a moving web by encoding all the geometry information required for the entire patterning steps into a monolithic three-dimensional mask that is imprinted on the thin film stack deposited on a flexible substrate. Soft molds made of plastics or elastomers cast on a silicon master have been used as stamps to pattern the 3D masks because of their low cost and ease of fabrication. However, the durability of these stamps is one factor that limits their efficiency in a R2R process. Fluorothermoplastics are low cost imprint stamp materials with great mechanical strength and chemical compatibility but with low gas permeability that trap air bubbles in the photopolymer during the imprint process. This paper describes the strategy for increasing gas permeability of fluorothermoplastics by introducing voids or pores in the stamp material by fabricating the stamps with aqueous colloidal dispersions of tetrafluoroethylene-hexafluoropropylene copolymer (FEP) nanoparticles. The basic idea is that the hard fluorinated particles, whose modulus is too high to deform during drying, remain as hard spheres and lead to a porous packing when drying is complete. The selection of suitable additives to eliminate cracks created by capillary stresses during water evaporation is also described in this paper. © 2011 The Royal Society of Chemistry.


Elder R.E.,Hewlett - Packard | Jackson W.B.,Hewlett - Packard | Jam M.,Hewlett - Packard | Jeans A.,Hewlett - Packard | And 11 more authors.
49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 | Year: 2011

HP and Phicot are making a fully roll-to roll fabricated display for a solar powered wrist display. We have developed methods for electrical testing of display backplanes on flexible substrates which are not bonded to a carrier. This has enabled improvement of yield through rapid electrical test feedback.


Taussig C.,Hewlett - Packard | Cobene R.,Hewlett - Packard | Elder R.,Hewlett - Packard | Jackson W.,Hewlett - Packard | And 13 more authors.
48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 | Year: 2010

HP and Phicot are planning the world's first R2R (roll-to-roll) manufacturing line for display backplanes based on the SAIL (Self-Aligned Imprint Lithography) process. Economic benefits for R2R compared to batch, cost comparisons of different R2R processes, comparison of substrate options, and necessary supply chain infrastructure developments are presented.


Jackson W.B.,Hewlett - Packard | Kim H.-J.,Phicot Inc. | Kwon O.,Phicot Inc. | Yeh B.,Hewlett - Packard | And 6 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

A roll-to-roll process is used to fabricate amorphous silicon and amorphous multicomponent oxide (MCO) transistors on flexible substrates using self aligned imprint lithography (SAIL). SAIL solves the layer to layer alignment problem. The imprint lithography patterned MCO transistors had a mobility of 15 cm2V-1 sec-1 and an on-off ratio of 10 7. Full display arrays with data, gate, hold capacitors and cross-overs were patterned using SAIL technology. Studies of stability of the MCO transistors indicate the importance of controlling O vacancies in the material particularly the back channel. Devices subjected to -10V gate bias stress at 60C under illumination exhibited behavior consistent with state creation in the upper and lower half of the gap near the back channel interface possibly associated with O vacancy formation.


Taussig C.,Hewlett - Packard | Elder R.E.,Hewlett - Packard | Jackson W.B.,Hewlett - Packard | Jeans A.,Hewlett - Packard | And 11 more authors.
HP Laboratories Technical Report | Year: 2011

HP and Phicot have made the world's first roll-to-roll (R2R) manufactured active matrix displays. Currently we are developing a wrist-worn solar powered display for the U.S. Army. As we scale from research to preproduction on our 1/3 meter wide pilot line defect analysis and mitigation is our primary focus. In this presentation we will review the self-aligned imprint lithography (SAIL) process and discuss defects we observe, and the tools, and processes we have developed to detect and eliminate them. © Copyright Device Research Conference, 2011.


De La Fuente Vornbrock A.,Hewlett - Packard | Almanza-Workman M.,Phicot Inc. | Dickin F.,Hewlett - Packard | Elder R.E.,Hewlett - Packard | And 16 more authors.
Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 | Year: 2012

Processes to produce active-matrix backplanes on plastic substrates have been developed utilizing a-Si:H, multi-component oxide, and organic semiconductor technologies. The suitability of these technologies for future flat panel display applications is discussed. Of these material systems multi-component oxides exhibit highest field-effect mobilities (10cm 2/Vs for zinc tin oxide demonstrated), followed by small molecule organic semiconductors (0.95 cm 2/Vs), and a-Si:H (0.5 cm 2/Vs). Yet despite higher mobilities, organic TFTs drive less current than a-Si:H because of the low device capacitances required to fabricate such devices. Backplanes made with a-Si:H appear to be the least risky technology, followed by multi-component oxide, and organic semiconductor technologies. © 2012 JSAP.


De La Fuente Vornbrock A.,Hewlett - Packard | Almanza-Workman M.,Phicot Inc. | Dickin F.,Hewlett - Packard | Elder R.E.,Hewlett - Packard | And 16 more authors.
HP Laboratories Technical Report | Year: 2012

Processes to produce active-matrix backplanes on plastic substrates have been developed utilizing a-Si:H, multi-component oxide, and organic semiconductor technologies. The suitability of these technologies for future flat panel display applications is discussed. Of these material systems multi-component oxides exhibit highest field-effect mobilities (10cm 2/Vs for zinc tin oxide demonstrated), followed by small molecule organic semiconductors (0.95 cm 2/Vs), and a-Si:H (0.5 cm 2/Vs). Yet despite higher mobilities, organic TFTs drive less current than a-Si:H because of the low device capacitances required to fabricate such devices. Backplanes made with a-Si:H appear to be the least risky technology, followed by multi-component oxide, and organic semiconductor technologies. © Copyright 2012 Hewlett-Packard Development Company, L.P.

Loading Phicot Inc. collaborators
Loading Phicot Inc. collaborators