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Voitsekhovskii A.V.,Tomsk State University | Nikitin M.S.,Federal State Unitary Enterprise | Talipov N.K.,The Peter the Great Military Academy of Strategic Missile Forces
Russian Physics Journal | Year: 2013

The results of measurements of dark current-voltage characteristics of planar diodes of various area produced on the basis of heteroepitaxial MBE p-CMT layers under various modes of boron ion implantation are discussed. It is shown that the diodes with the n+/n-/p-junction are characterized by far lower dark currents and higher differential resistance Rd as compared with abrupt n+-p-junctions. It was experimentally established that the parameter RdAeff, where Aeff is the effective area of minor charge-carrier collection, is more correct that the RdA parameter for the n-p-junctions of various areas. © 2013 Springer Science+Business Media New York. Source

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