Peregrine Semiconductor is a San Diego-based manufacturer of high-performance RF CMOS integrated circuits. The company's products are used in aerospace and defense, broadband, industrial, mobile wireless device, test and measurement equipment and wireless infrastructure markets. Peregrine's UltraCMOS technology is a proprietary implementation of silicon on sapphire and silicon on insulator substrates that enables high levels of monolithic integration. Wikipedia.
Peregrine Semiconductor | Date: 2017-01-04
A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a stacked or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
Soitec and Peregrine Semiconductor | Date: 2017-03-22
The invention relates to a structure (100) for radiofrequency applications comprising:- a monocrystalline substrate (1),- a polycrystalline silicon layer (2) directly on the monocrystalline substrate (1),- an active layer (3) on the polycrystalline silicon layer (2), intended to receive radiofrequency components,characterized in that at least a first portion (2a) of the polycrystalline silicon layer (2) extending from the interface (I) of the polycrystalline silicon layer (2) with the monocrystalline layer includes carbon and/or nitrogen atoms located at the grain boundaries of the polycrystalline silicon. The invention further relates to a process for manufacturing such a structure.
Peregrine Semiconductor | Date: 2016-10-31
Multi-state radio frequency (RF) attenuator configurations that include bridged-T type, pi-type, and T-type structures each having a programmable throughput section and a coupled programmable shunt section. The throughput sections and shunt sections may be configured in various combinations of parallel and serial fixed or selectable resistance elements such that multiple resistance states and impedance matching states can be programmatically selected, and may include stacked switch elements to withstand applied voltages to a specified design level.
Peregrine Semiconductor | Date: 2016-09-28
Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage that varies according to a control voltage. The control voltage can be related to a desired output power of the amplifier and/or to an envelope signal of an input signal to the amplifier. Particular biasing for selectively controlling the stacked transistors to operate in either a saturation region or a triode region is also presented. Benefits of such controlling, including increased linear response of an output power of the amplifier, are also discussed.
Peregrine Semiconductor | Date: 2016-12-16
A charge pump circuit that utilizes a sensing circuit for determining the current loading or status of the output supply generated by the charge pump circuit to determine a corresponding frequency for a variable rate clock for the charge pump circuit. When a current load is present, the clock frequency automatically ramps up to a relatively high level to increase the output current of the charge pump circuit. When the current load is removed and the supply is settled out, the clock frequency is automatically reduced to a relatively quieter level and the charge pump circuitry operates at a lower power level. Accordingly, the charge pump circuit is only noisy when it has to be, thus providing optimal power when required and being electrically quiet and operating at lower power at all other times.
Peregrine Semiconductor | Date: 2016-03-23
Systems, methods, and apparatus for an improved body tie construction are described. The improved body tie construction is configured to have a lower resistance body tie exists when the transistor is off (Vg approximately 0 volts). When the transistor is on (Vg>Vt), the resistance to the body tie is much higher, reducing the loss of performance associated with presence of body tie. Space efficient Body tie constructions adapted for cascode configurations are also described.
Peregrine Semiconductor | Date: 2016-11-02
An apparatus for detecting difference in operating characteristics of a main circuit by using a replica circuit is presented. In one exemplary case, a sensed difference in operating characteristics of the two circuits is used to drive a tuning control loop to minimize the sensed difference. In another exemplary case, several replica circuits of the main circuit are used, where each is isolated from one or more operating variables that affect the operating characteristic of the main circuit. Each replica circuit can be used for sensing a different operating characteristic, or, two replica circuits can be combined to sense a same operating characteristic.
Peregrine Semiconductor | Date: 2017-02-01
An amplifier with switchable and tunable harmonic terminations and a variable impedance matching network is presented. The amplifier can adapt to different modes and different frequency bands of operation by appropriate switching and/or tuning of the harmonic terminations and/or the variable impedance matching network.
Peregrine Semiconductor | Date: 2017-02-07
An RF signal switch circuit that allows connection of any of N radio frequency (RF) input terminals to a switch output port, either in an in-circuit mode or in a bypass mode. Embodiments of the invention allow for both a single switch in the series input path while still having the ability to isolate the bypass path from an input matching network. In both modes, the circuit simultaneously exhibits low input insertion loss (and thus a low noise factor) and high bypass mode isolation.
Peregrine Semiconductor | Date: 2017-02-24
Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.