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Hentschel T.,Paul Drude Institute fuer Festkoerperelektronik Berlin | Jenichen B.,Paul Drude Institute fuer Festkoerperelektronik Berlin | Trampert A.,Paul Drude Institute fuer Festkoerperelektronik Berlin | Herfort J.,Paul Drude Institute fuer Festkoerperelektronik Berlin
Journal of Physics D: Applied Physics | Year: 2012

Epitaxial layers of the Heusler alloy Co 2FeSi were grown by molecular beam epitaxy on GaAs(110) at different growth temperatures T G. Below a transition temperature T trans=200°C samples with high interfacial perfection and crystal quality were obtained, whereas above T trans a strong surface and interface roughening sets in. All samples are ferromagnetic and reveal a uniaxial magnetic anisotropy with the easy axis along the direction. © 2012 IOP Publishing Ltd. Source

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