Portland, OR, United States

Pacific Light Technologies

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Portland, OR, United States
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A method of increasing photo-luminescent quantum yield (PLQY) of QDs to be used as down-converters placed directly on an LED chip includes synthesizing a plurality of quantum dots, applying energy to the plurality of quantum dots to increase PLQY of the plurality of quantum dots, dispensing the plurality of quantum dots onto the LED chip, and curing the LED chip.


Patent
Pacific Light Technologies | Date: 2016-08-01

A semiconductor structure has a nano-crystalline core comprising a first semiconductor material and a nano-crystalline shell comprising a second, different semiconductor material at least partially surrounding the nano-crystalline core. Either one, but not both, of the core and shell are based on cadmium-containing semiconductor materials.


Patent
Pacific Light Technologies | Date: 2016-12-05

A solar concentrator module (80) employs a luminescent concentrator material (82) between photovoltaic cells (86) having their charge-carrier separation junctions (90) parallel to front surfaces (88) of photovoltaic material 84 of the photovoltaic cells (86). Intercell areas (78) covered by the luminescent concentrator material (82) occupy from 2 to 50% of the total surface area of the solar concentrator modules (80). The luminescent concentrator material (82) preferably employs quantum dot heterostructures, and the photovoltaic cells (86) preferably employ low-cost high-efficiency photovoltaic materials (84), such as silicon-based photovoltaic materials.


Patent
Pacific Light Technologies | Date: 2017-03-22

Squared-off semiconductor coatings for quantum dots (QDs) and the resulting quantum dot materials are described. In an example, a semiconductor structure includes a quantum dot structure having an outermost surface. A crystalline semiconductor coating is disposed on and completely surrounds the outermost surface of the quantum dot structure. The crystalline semiconductor coating has a geometry with squared-off ends.


Patent
Pacific Light Technologies | Date: 2015-05-14

Squared-off semiconductor coatings for quantum dots (QDs) and the resulting quantum dot materials are described. In an example, a semiconductor structure includes a quantum dot structure having an outermost surface. A crystalline semiconductor coating is disposed on and completely surrounds the outermost surface of the quantum dot structure. The crystalline semiconductor coating has a geometry with squared-off ends.


A semiconductor structure includes a nanocrystalline core comprising a first semiconductor material, and at least one nanocrystalline shell comprising a second, different, semiconductor material that at least partially surrounds the nanocrystalline core. The nanocrystalline core and the nanocrystalline shell(s) form a quantum dot. An insulator layer encapsulates the quantum dot to create a coated quantum dot, and at least one additional insulator layer encapsulates the coated quantum dot.


Patent
Pacific Light Technologies | Date: 2016-07-01

A semiconductor structure includes a nanocrystalline core comprising a first semiconductor material having a first bandgap, and a nanocrystalline shell comprising a second semiconductor material different than the first semiconductor material at least partially surrounding the nanocrystalline core, the second semiconductor material having a second bandgap greater than the first bandgap.


Semiconductor structures having a nanocrystalline core and nanocrystalline shell pairing with compositional transition layers are described. In an example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A compositional transition layer is disposed between, and in contact with, the nanocrystalline core and nanocrystalline shell and has a composition intermediate to the first and second semiconductor materials. In another example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A nanocrystalline outer shell surrounds the nanocrystalline shell and is composed of a third semiconductor material. A compositional transition layer is disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell and has a composition intermediate to the second and third semiconductor materials. In the examples, an insulator coating surrounds and encapsulates the structure.


Patent
Pacific Light Technologies | Date: 2015-10-21

Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a semiconductor structure includes an insulator network. A plurality of discrete semiconductor nanocrystals is disposed in the insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network.


Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, group I-III-VI semiconductor material at least partially surrounds the nano-crystalline core.

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