Daejeon, South Korea
Daejeon, South Korea

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Park S.-H.K.,Oxide TFT Research Section | Kim J.W.,Oxide TFT Research Section | Ryu M.,Oxide TFT Research Section | Eom I.Y.,Oxide TFT Research Section | And 6 more authors.
Digest of Technical Papers - SID International Symposium | Year: 2013

The adoption of bi-layered etch stop layer (BiESL) for oxide thin film transistor with high carrier mobility was proposed for the application to the large area high resolution AMOLED. A novel bi-layered etch stop structure composed of Al2O3/SiO2, in which thin and dense Al2O3 film prepared by atomic layer deposition was deposited on the PECVD SiO2 layer. High mobility of In-Ga-Zn-O TFT with the proposed BiESL showed no significant change in turn-on voltage, even without passivation film. The field-effect saturation mobility and sub-threshold swing were measured as 29 cm2/V.s and 0.21 V/dec, respectively. Hydrogen doping during the PECVD SiNx passivation process can be effectively prevented by the introduction of Al2O3. Furthermore organic planarization film can be coated directly on top of the TFT array without causing any significant degradation of TFT performance. © 2013 Society for Information Display.


Park S.-H.K.,Korea Advanced Institute of Science and Technology | Eom I.Y.,Korea Advanced Institute of Science and Technology | Jin J.,Korea Advanced Institute of Science and Technology | Kim H.Y.,Korea Advanced Institute of Science and Technology | And 6 more authors.
Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials | Year: 2014

We present high performance back channel etch (BCE) oxide TFT of which overlap capacitance between source/drain and gate is minimized. With considering application to the plastic LCD, we fabricated BCE TFT under 250oC with PECVD SiNx/PEALD SiO2 gate insulator and its mobility, S.S, Vth are 28.7 cm2/V.s, 0.1 V/dec, and 1.06 V, respectively. Its Vth shift under positive bias stress for 10,000 seconds is 0.75 V at 20V. BCE TFT fabricated on transparent GFRHybrimer film which has no retardation showed mobility of 19.1 cm2/V.s. © 2014 JSAP.

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