Ostendo Technologies | Date: 2015-01-07
A compressed light field imaging system is described. The light field 3D data is analyzed to determine optimal subset of light field samples to be (acquired) rendered, while the remaining samples are generated using multi-reference depth-image based rendering. The light field is encoded and transmitted to the display. The 3D display directly reconstructs the light field and avoids data expansion that usually occurs in conventional imaging systems. The present invention enables the realization of full parallax 3D compressed imaging system that achieves high compression performance while minimizing memory and computational requirements.
Ostendo Technologies | Date: 2014-08-05
3D light field display methods and apparatus with improved viewing angle, depth and resolution are introduced. The methods can be used to create a high quality 3D light field display of any size from smaller than a postage stamp to larger than a three story building.
Ostendo Technologies | Date: 2015-10-01
Spatio-temporal light field cameras that can be used to capture the light field within its spatio temporally extended angular extent. Such cameras can be used to record
Ostendo Technologies | Date: 2014-08-13
A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.
Ostendo Technologies | Date: 2015-05-28
Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure in order to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.