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Zang S.-G.,Fudan University | Liu X.-Y.,Fudan University | Lin X.,Fudan University | Liu L.,Oriental Semiconductor Co. | And 4 more authors.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | Year: 2010

Because of the special p-i-n structure of the tunneling FET (TFET), many different composite transistors can be formed with careful device design by combining TFET with MOSFET. In this paper, we propose the special applications of TFET as memory devices. A novel capacitor-less DRAM cell based on floating junction gate (FJG) concept can be configured with TFET. In addition, several different memory cells containing TFET will be discussed. ©2010 IEEE. Source


Wang P.-F.,Oriental Semiconductor Co. | Wang P.-F.,Fudan University | Liu L.,Oriental Semiconductor Co. | Wu D.,Fudan University | And 6 more authors.
Solid-State Electronics | Year: 2010

A novel DRAM cell based on floating junction gate (FJG) concept is investigated for its extended applications. Compared to the two-transistor floating gate DRAM cell, the new memory cell investigated in the present work has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated-diode so that state "1" can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility, the self-refreshing ability, and the non-destructive read are explored. In addition, extended applications of the DRAM cell using the FJG concept will be discussed. © 2010 Elsevier Ltd. Source


Lin X.,Fudan University | Liu L.,Oriental Semiconductor Co. | Liu X.-Y.,Fudan University | Zang S.-G.,Fudan University | And 3 more authors.
ECS Transactions | Year: 2011

A novel memory device with dual floating-gate is investigated in this paper. The fabrication process of this device is compatible with the standard logic CMOS process flow using single gate poly. It can store 2 bits in a single cell without increasing the cell size. This study provides the fabrication process flow of the dual floating-gate devices. The transfer characteristics, programming, reading, and erasing performances are investigated. The crosstalk between these two floating-gates is also studied. Simulation results show a prosperous prospect of this device. It is promising for high density embedded FLASH applications. ©The Electrochemical Society. Source

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