Yang X.,Optoelectronic Technology Laboratory |
Wang Y.,Hunan University |
Guo Y.,Optoelectronic Technology Laboratory |
Cao H.,Optoelectronic Technology Laboratory |
And 2 more authors.
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | Year: 2011
It is well know that the infrared transmittance is low in 3-5 μm wave band when the diamond-like carbon (DLC) film is prepared by traditional pulse laser deposition. Aiming at this problem, an approach based on the femtosecond pulse laser deposition (PLD) method was proposed to plate DLC film on silicon wafer. The effect of some parameters such as the spacing between the target and substrate, background gas pressure, single pulse energy, negative bias voltage, temperature and doping silicon on transmittance were also studied. A set of effective technology to prepare an excellent optical protection antireflective film was summed up based on plentiful experiments and optimal analysis. Compared with traditional process, this process greatly enhanced 3-5 μm wave band average infrared transmittance, and compared with the highest theory result 68.7%, the highest infrared transmittance will reach 68.2%, just 0.5% behind.