Opnext Japan Inc.

Totsuka ku, Japan

Opnext Japan Inc.

Totsuka ku, Japan
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An optical device includes a ridge-like optical waveguide portion, a mesa protector portion that is arranged in parallel to the optical waveguide portion, a resin portion that covers upper parts of the mesa protector portion and is disposed at both sides of the mesa protector portion, an electrode that is disposed on the optical waveguide portion, an electrode pad that is disposed on the resin portion located at an opposite side to the optical waveguide portion with respect to the mesa protector portion, and a connection portion that is disposed on the resin portion and electrically connects the electrode to the electrode pad.


Patent
Opnext Japan Inc. | Date: 2012-05-03

An optical phase shifter according to the invention includes the thermo-optical element of which a refractive index with respect to an input optical signal changes dependently on temperature; a temperature change section, having contact with one end of the thermo-optical element and of which a temperature changes so that a temperature of the thermo-optical element becomes a desired temperature; a heat dissipation section being disposed on an opposite side of the thermo-optical element with respect to the temperature change section and going into a state of thermal equilibrium at a temperature different from the temperature of the temperature change section; and a temperature buffer section, being disposed between the temperature change section and the heat dissipation section, having contact with the temperature change section and the heat dissipation section, and having a heat resistance greater than that of the heat dissipation section.


The I phase modulator modulates a phase based on the bias voltage in which a first modulation signal and a first pilot signal are inherent and the Q phase modulator modulates a phase based on the bias voltage in which a second pilot signal different from the first pilot signal and a second modulation signal are inherent. A time-average power synchronous detection unit detects an optical power at a timing at which the positivity and negativity of the voltages of both pilot signals become the same, and an optical power when the positivity and negativity of the voltages of both pilot signals are opposite. The bias voltage control unit controls the bias voltage so that the difference between both the optical powers becomes small based on the detection result of the time-average power synchronous detection unit.


Patent
Opnext Japan Inc. | Date: 2012-01-12

A delay interferometer includes a half beam splitter and two pentagonal prisms disposed on a substrate. The half beam splitter branches light to be measured which travels substantially in parallel with the substrate into two branched light beams. The pentagonal prisms respectively reflect the respective branched light beams such that the optical axes of the branched light beams are moved in parallel in a direction substantially perpendicular to the substrate by reflection. The half beam splitter combines the branched light beams reflected by the pentagonal prisms to generate interference light beams.


Patent
Opnext Japan Inc. | Date: 2012-01-20

In pattern synchronization for correctly regenerating received data, which is performed in an optical receiver for receiving an optical signal that has been subjected to quadrature phase modulation, signal conduction is quickly established without using duplicate combinations of bit shifting and pattern changing. A control method that does not involve verifying the duplicate combinations generated in modulation formats and pattern synchronization search orders. Specifically, a signal check circuit (40) performs data verification of data multiplexed by a MUX circuit (38) for multiplexing two data strings, and a bit shift pattern change control circuit (41) controls a bit shift circuit (36) and a pattern changing circuit (37) based on a result of the data verification and detects a correct combination of correct regenerated data to establish the signal conduction. At this time, for the bit shift circuit (36) and the pattern changing circuit (37), the duplicate combinations are not verified.


A light-receiving device array includes a photodiode array that is provided with plural light-receiving sections each of which includes a first conductivity type electrode and a second conductivity type electrode, and a carrier, wherein the carrier includes plural pair of electric lines each of which is formed from a first electric line connected to the first conductivity type electrode of each light-receiving section, and a second electric line connected to the second conductivity type electrode of the light-receiving section, a first ground electrode that extends between one pair of electric lines of the plural pair of electric lines and a pair of electric lines adjacent to the one pair of electric lines, and a second ground electrode that is formed on a part of the rear surface and is electrically connected to the first ground electrode.


Patent
Opnext Japan Inc. | Date: 2012-06-07

The optical semiconductor device includes a spot-size converter formed on a semiconductor substrate. The spot-size converter has a multilayer structure including a light transition region. The multilayer structure includes a lower core layer, and an upper core layer having a refractive index higher than that of the lower core layer. The width of the upper core layer is gradually decreased and the width of the lower core layer is gradually increased in the light transition region. Both sides and an upper side of the multilayer structure are buried by a semi-insulating semiconductor layer in the light transition region. Light incident from one end section of the spot-size converter is propagated to the upper core layer. The light transits from the upper core layer to the lower core layer in the light transition region, is propagated to the lower core layer, and exits from the other end section thereof.


A differential transmission circuit includes a pair of transmission line conductors and a ground conductor layer, wherein the pair of transmission line conductors include a first straight line region where both the pair of transmission line conductors extend in parallel to each other in a first direction with a first width in a first layer, a first cross region where one of the pair of transmission line conductors is formed in the first layer, the other thereof is formed in a second layer, and the pair of transmission line conductors cross the each other in a three-dimensional manner, the first cross region being disposed on the front side of the first straight line region, and wherein each of the widths of the pair of transmission line conductors in the first cross region is smaller than the first width.


Patent
Opnext Japan Inc. | Date: 2012-04-19

A differential transmission circuit includes a grounded conductive layer, a pair of transmission line conductors, a conductive film and a via hole which connects the grounded conductive layer to the conductive film. The differential transmission circuit further includes a straight-line region which is present in the differential transmission circuit through which a differential transmission signal output by a driving circuit is transmitted and in which the pair of transmission line conductors extends parallel so as to have a first width, and a band rejection filter region in which the pair of transmission line conductors planarly overlaps the conductive film and extends parallel so as to have a second width narrower than the first width and a common mode of the differential transmission signal is attenuated at one of the frequencies which are natural number multiples of a frequency corresponding to the predetermined bit rate.


Patent
Opnext Japan Inc. | Date: 2012-05-11

A wavelength tunable filter and a wavelength tunable laser module are a codirectional coupler type whose characteristics do not vary significantly with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguides are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.

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