Akchurin R.K.,Lomonosov Moscow University of Fine Chemical Technology |
Boginskaya I.A.,Lomonosov Moscow University of Fine Chemical Technology |
Marmalyuk A.A.,OOO Sigm Plus |
Ladugin M.A.,OOO Sigm Plus |
Surnina M.A.,Lomonosov Moscow University of Fine Chemical Technology
Russian Microelectronics | Year: 2012
The initial stage of the formation of quantum dots in the InAs/GaAs system by droplet epitaxy is investigated. The results of the study of the effect that the modes of MOVPE have on the size and density of the array of nanodimensional indium droplets on a GaAs(100) substrate are presented. The possibility to use indium evaporation to control the sizes of the deposited droplets is shown. A reasonable temperature range for heat treatment (300-400°C) is chosen on the basis of the calculations of the indium evaporation rate and the temperature dependence of the droplet-substrate contact wetting angle. From the calculation of heterogeneous equilibria in the In-Ga-As system, it was established that the change in the composition of the deposited droplets resulting from the possible substrate dissolution is extremely little in the specified temperature range. © Pleiades Publishing, Ltd., 2012.
Akchurin R.K.,Moscow State University |
Berliner L.B.,Moscow State University |
Boginskaya I.A.,Moscow State University |
Gordeev E.G.,Moscow State University |
And 4 more authors.
Technical Physics | Year: 2014
The first stage of formation of InAs/GaAs quantum-dot heterostructures by droplet epitaxy is investigated. Factors influencing the geometrical size and density of arrays of indium nanodrops deposited by trimethylindium pyrolysis on the GaAs(100) substrate are analyzed, and the possibility of using these factors in the process of metal-organic vapor phase epitaxy (MOVPE) are studied. To refine the temperature dependence of the In evaporation rate, a computational experiment taking into account real MOVPE conditions is conducted. An ultimate change in the composition of In droplets contacting the substrate at a high temperature is estimated, and the thickness and composition of crystallizing In-Ga-As solid solution are calculated. It is shown that the size and density of the droplet array to a great extent depend on the crystallochemical structure of the substrate surface and deposition conditions. © 2014 Pleiades Publishing, Ltd.
Mazalov A.V.,OOO Sigm Plus |
Sabitov D.R.,OOO Sigm Plus |
Kureshov V.A.,OOO Sigm Plus |
Padalitsa A.A.,OOO Sigm Plus |
And 2 more authors.
Russian Microelectronics | Year: 2014
The influence of buffer layers formed at different temperatures and ratios of elements of groups V and III (V/III) on crystalline perfection of epitaxial layers AlN grown using the MOS-Hydride Epitaxy Method on the templates α-Al2O3 is considered. It is shown that the most efficient method to increase the structural perfection of epitaxial layers is use of the high-temperature buffer layer on a low V/III ratio. Further improvement of the quality of AlN layers is possible due to the reduction of parasitic reactions between ammonia and trimethylaluminum in the gas phase by means of optimization of the gas flow through the reactor. The specified values of the growth parameters permitted obtaining the AlN layers of the high crystalline perfection (half-width of X-ray swing curves for reflections (0002), (0004) and (Formula presented.) made asec of 50, 97 and 202, respectively) with a good root-mean-square roughness of the surface of 0.7 nm applicable for the creation of instruments based thereon. © 2014, Pleiades Publishing, Ltd.