ON Semiconductor | Date: 2014-01-16
A method of interrupt control for a control unit of an electronic system includes receiving digital data; determining a value of the digital data; and sending interrupt signals to a host by the following methods according to the value: when the control unit is in a second signal sending status and after the value of the digital data increases to be greater than a first threshold and remains greater than the first threshold for a first period of time, switching the control unit to a first signal sending status; and when the control unit is in the first signal sending status and after the value of the digital data decreases to be smaller than a second threshold and remains smaller than the second threshold for a second period of time, switching the control unit to the second signal sending status. The second threshold is smaller than the first threshold.
ON Semiconductor | Date: 2014-03-03
A method of interrupt control for an electronic system, the electronic system including a host and an electronic device, includes receiving digital data generated by the electronic device; determining a value of the digital data and dividing a possible range of the value of the digital data into a plurality of regions; and sending an interrupt signal to the host when the value of the digital data changes from a first region among the plurality of regions to a second region among the plurality of regions and remains within the second region for a specific period of time.
ON Semiconductor | Date: 2014-04-28
A motion sensing device for sensing infrared rays, the motion sensing device includes a substrate; a sensing unit, configured on the substrate for sensing the infrared rays; a stabilizing layer, covering on the sensing unit for fixing and protecting the sensing unit, wherein the stabilizing layer has an opening; a protection layer, formed on the opening; and a coating layer, covering the stabilizing layer for absorbing infrared rays, wherein the coating layer does not cover the opening.
Agency: Cordis | Branch: FP7 | Program: CP | Phase: ICT-2011.3.2 | Award Amount: 13.04M | Year: 2011
Smart systems consist of heterogeneous subsystems and components providing different functionalities; they are normally implemented as Multi-Package on a Board. To fully exploit the potential of current nanoelectronics technologies, as well as to enable the integration of existing/new IPs and More than Moore devices, smart system miniaturization and Multi-Chip in a Package implementation are unavoidable. Such goals are only achievable if a flexible software platform (i.e., the SMAC platform) for smart subsystems/components design and integration is made available to designers and system integrators.\nThe platform must include methodologies and EDA tools enabling multi-disciplinary and multi-scale modeling and design, simulation of multi-domain systems, subsystems and components at all levels of abstraction, system integration and exploration for optimization of specific metrics, such as power, performance, reliability and robustness.\nKey ingredients for the construction of the SMAC platform include: (1) The development of a cosimulation and co-design environment which is aware (and thus considers) the essential features of the basic subsystems and components to be integrated. (2) The development of modeling and design techniques, methods and tools that, when added to the platform, will enable multi-domain simulation and optimization at various levels of abstraction and across different technological domains.\nThe SMAC platform will allow to successfully address the following grand challenges related to the design and manufacturing of miniaturized smart systems: (1) Development of innovative smart subsystems and components demonstrating advanced performance, ultra low power and the capability of operating under special conditions (e.g., high reliability, long lifetime). (2) Design of miniaturized and integrated smart systems with advanced functionality and performance, including nanoscale sensing systems, possibly operating autonomously and in a networked fashion
ON Semiconductor | Date: 2013-07-05
A bridge rectifier including a common P-type diode, a common N-type diode, two first metal layers, two pairs of second metal layers, two AC inputs and two DC outputs. The P-type diode includes a common P-type doping region, a pair of first N-type substrate regions and a pair of P-type doping regions. The N-type diode includes a common N-type doping region, a pair of second N-type substrate regions and a pair of N-type doping regions. The first metal layers connect to the common N-type doping region and the common P-type doping region. The second metal layers connect to the P-type doping region and the N-type doping region. Two AC inputs connect to one of the second metal layers of the P-type diode and one of the second metal layers of the N-type diode respectively. Two DC inputs connect to the first metal layers respectively.