ON Semiconductor

Phoenix, AZ, United States

ON Semiconductor

Phoenix, AZ, United States

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Patent
ON Semiconductor | Date: 2016-04-05

A diode device and manufacturing method thereof are provided. The diode device includes a substrate, an epitaxial layer, a trench gate structure, a Schottky diode structure and a termination structure. An active region and a termination region are defined in the epitaxial layer. The Schottky diode structure and the trench gate structure are located in the active region and the termination structure is located in the termination region. The termination structure includes a termination trench formed in the epitaxial layer, a termination insulating layer, a first spacer, a second spacer and a first doped region. The termination insulating layer is conformingly formed on inner walls of the termination trench. The first and second spacers are disposed on two sidewalls of the termination trench. The first doped region formed beneath the termination trench has a conductive type reverse to that of the epitaxial layer.


Patent
ON Semiconductor | Date: 2016-04-25

A super-junction semiconductor device is provided. The super-junction semiconductor device includes a substrate, a drift layer, a field insulator, a floating electrode layer, an isolation layer, and at least one transistor structure. The drift layer includes a plurality of n-type and p-type pillars alternately arranged in parallel to form a super-junction structure. An active region, a termination region and a transition region located therebetween are defined in the drift layer. The field insulator disposed on a surface of the drift layer covers the termination region and a portion of the transition region. The floating electrode layer disposed on the field insulator partially overlaps with the termination region. The transistor structure includes a source conductive layer extending from the active region to the transition region and superimposed on a portion of the floating electrode layer. The source conductive layer is isolated from the floating electrode layer by the isolation layer.


A bump structure includes a pad. A passivation layer covers a perimeter of the pad. The passivation layer includes an opening exposing an area of the pad. A first portion is disposed on the pad. The first portion includes a top surface and a sidewall. A second portion covers the top surface and entire sidewall of the first portion.


Grant
Agency: European Commission | Branch: H2020 | Program: ECSEL-RIA | Phase: ECSEL-01-2014 | Award Amount: 52.90M | Year: 2015

The 3Ccar project will provide highly integrated ECS Components for Complexity Control in thereby affordable electrified cars. The new semiconductors for Complexity management (Control, reduction) will offer the next level of energy efficiency in transportation systems. 3Ccars impact is maximizing pragmatic strategy: Use semiconductor technology innovations to manage functionality & complexity increase. This leads also to cheaper, efficient, robust, comfortable, reliable and usable automotive systems. This strengthens Europe as a whole (OEM, Tier1, Semiconductor) generating economic growth and new jobs in Europe. The impact of 3Ccar is driven vertically by innovations and horizontally enabling growth and deployment in the industry based on what we see as European Values. We recognized that European engineers develop for highest efficiency, convergence and manageable complexity. Our society appreciates long life products to avoid waste. 50 partners and 55 Mio budget give the mass for innovative products such as functional integrated powertrains, smart battery cells with unique selling features allowing Europe to advance to global leadership. An important feature of the project has been the recognition and exploitation of synergies with other EV projects, enabling fast innovation cycles between such aligned projects. With 55 Mio budget and 10 b impact the R&D expenditure ratio is 200 which is 10x higher than the semiconductor average and corresponds to very strong innovation potential which will be translated into automotive and semiconductor industry. The technologies developed in 3Ccar will be commercialized all over the world while giving advantages to Europes OEMs willing to manufacture in Europe. 3Ccar will be involved in standardization needed to ensure that large vertical supply chains can be established. The 3Ccar project shows that collaboration between industry, research institutes, governments and customers is pivotal for excellence in Europe.


Grant
Agency: European Commission | Branch: FP7 | Program: CP | Phase: ICT-2013.3.1 | Award Amount: 5.04M | Year: 2013

Designs in nanoelectronics often lead to problems that are large to simulate and that include strong feedback couplings. Industry demands to include variability to guarantee quality and yield. It also requests to incorporate higher abstraction levels to allow for system simulation in order to shorten design cycles, while preserving accuracy. The nanoCOPS project considers the simulation of two problem classes identified by industry:- Power-MOS devices, with applications in energy harvesting, and which involve couplings between electromagnetics (EM), heat, and stress, and- RF-circuitry in wireless communication, which involves EM-circuits-heat coupling and multirate behaviour, together with analogue-digital signals.Due to the market demands, the scientific challenges are to- create efficient and robust simulation techniques for strongly coupled systems, that exploit the different dynamics of sub-systems and that can deal with signals that differ strongly in the frequency range;- include variability such that robust design, worst case analysis, and yield estimation with tiny failures are possible (including large deviations like 6-sigma);- reduce complexity such that one can still vary parameters and such that the reduced models offer higher abstraction models that are efficient to simulate.Our solutions are- advanced co-simulation/multirate/monolithic techniques, combined with envelope/wavelet approaches;- new generalized techniques from Uncertainty Quantification (UQ) for coupled problems, tuned to the statistical demands from manufacturability;- enhanced, parameterized Model Order Reduction techniques for coupled problems and for UQ.All algorithms will be validated in the industrial design tools provided by our industrial partners.Our consortium covers extensive R&D experience in nanoelectronic IC simulation and complementary expertise. It includes seven universities, one research institute, two large-scale semiconductor companies, and two SMEs.


Grant
Agency: European Commission | Branch: H2020 | Program: RIA | Phase: NMBP-02-2016 | Award Amount: 7.69M | Year: 2017

The main objective of this proposal is to develop reliable GaN-based power devices and systems for high and medium power electronics targeting industrial and automotive applications and bringing the GaN power devices another step towards the wide usability in the energy saving environment to further tap the full potential which this new material brings along. This proposal addresses two subjects, one of which is medium power (till 10kW) GaN-on-Si based lateral HEMT structures, with special focus on high reliability, which is still a major blocking item to allow wide-spread market adoption. Hence, the impact of the GaN material quality, in combination with the device layout in view of long-term reliability will be addressed. The project aims an in-depth reliability study and qualification strategy development whereby the study of the impact of dislocations and other structural disturbances inside the materials on the long term device reliability will be specifically addressed. In addition, this proposal aims to demonstrate new device concepts with increased robustness and reliability, which will be realized, evaluated and tested thoroughly. This will demonstrate how it is possible to overcome the known limitations of the GaN on Silicon technology, like e.g. the vertical leakage, trapping phenomena and/or breakdown of lateral HEMTs. The current proposal also contains the development of novel device architecture (dual channel, substrate removal, e-mode), as well as the exploration of new material systems (Aluminum Nitride (Al-based) devices) which can also largely contribute to overcome drawbacks of the GaN on Si technology. The applicability of the novel GaN-on-Si concepts in form of an industrial inverter will be demonstrated finally, with the development of an innovative low inductance packaging system for power devices, making full benefits of the fast switching capability of GaN-based power devices.


Patent
ON Semiconductor | Date: 2014-11-19

A motion sensing device for sensing infrared rays includes a substrate; an optical module, including a first spacer layer coupled to the substrate; a first glass layer formed on the first spacer layer; a second spacer layer formed on the first glass layer; a second glass layer formed on the second spacer layer; a third spacer layer formed on the second glass layer; a first lens bonded on a first side of the second glass layer; and a second layer bonded on a second side relative to the first side of the second glass layer; and a coating layer covering the optical module for shielding against infrared rays, wherein the coating layer does not cover the first lens.


Patent
ON Semiconductor | Date: 2014-11-05

A motion sensing device for sensing infrared rays, the motion sensing device including a substrate; a sensing unit for sensing the infrared rays which is configured on the substrate; a stabilizing layer for fixing and protecting the sensing unit by covering the sensing unit, wherein the stabilizing layer has an opening; a protection layer formed on the opening; and a coating layer for absorbing infrared rays by covering the stabilizing layer wherein the coating layer does not cover the opening.


Patent
ON Semiconductor | Date: 2014-11-05

A method of interrupt control for a control unit of an electronic system includes receiving digital data; determining a value of the digital data; and sending interrupt signals to a host by the following methods according to the value of the digital data: when the control unit is in a signal sending status and after the value of the digital data increases to be greater than a threshold and remains greater than the threshold for a period of time, switching the control unit to another signal sending status; and when the control unit is in the other signal sending status and after the value of the digital data decreases to be smaller than another threshold and remains smaller than the other threshold for another period of time, switching the control unit to the signal sending status; wherein the other threshold is smaller than the threshold.


Patent
ON Semiconductor | Date: 2014-11-05

A light sensing module and a processor incorporated in a light sensing system which includes at least one light source, for emitting light; at least one light sensor, for sensing the light emitted by the at least one light source or light reflected by an ambient object or ambient light, in order to obtain a sensing result; a control unit, for performing image detection and object identification or ambient light sensing by computing the sensing result to generate a computational result; and at least one interrupt driver, for sending an interrupt signal to the processor, in order to notify the processor to receive the computational result; wherein the processor deploys the type and the number of the at least one light sensor, and configures the control unit accordingly, so that the control unit performs computation on the sensing result to generate the computational result.

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