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CA, United States

Patent
OmniVision Technologies Inc. | Date: 2014-08-01

Embodiments are disclosed of a process for high dynamic range (HDR) images using an image sensor with pixel array comprising a plurality of pixels to capture a first image having a first exposure time, a second image having a second exposure time, and a third image having a third exposure time, wherein of the first, second, and third exposure times the second exposure time is the shortest. The first, second, and third images are combined into a high-dynamic-range (HDR) image. Other embodiments are disclosed and claimed.


Patent
OmniVision Technologies Inc. | Date: 2015-08-25

A method of focusing an image sensor includes scanning a first portion of an image frame from an image sensor a first time at a first rate to produce first focus data. A second portion of the image frame from the image sensor is scanned at a second rate to read image data from the second portion. The first rate is greater than the second rate. The first portion of the image frame is scanned a second time at the first rate to produce second focus data. The first focus data and the second focus data are compared, and the focus of a lens is adjusted in response to the comparison of the first focus data and the second focus data.


Patent
OmniVision Technologies Inc. | Date: 2015-02-10

An image sensor is fabricated by forming transfer gates over a substrate layer. A transfer gate is disposed between a respective shared charge-to-voltage conversion region and a photodetector associated with the shared charge-to-voltage conversion region. The transfer gates of each shared charge-to-voltage conversion region are spaced apart to form a conversion region gap. A masking conformal dielectric layer is deposited over the image sensor, covers the transfer gates, fills each conversion region gap, and is etched to form sidewall spacers along an outside edge of each transfer gate with a portion remaining in each conversion region gap and disposed over the substrate layer in each conversion region gap. Source/drain regions are implanted in the substrate layer where an implant region is formed in the transfer gates. The masking conformal dielectric layer in each conversion gap masks the source/drain implant Each charge-to-voltage conversion region is substantially devoid of the implant region.


Patent
OmniVision Technologies Inc. | Date: 2015-01-07

Capturing a target image includes activating a first image sensor for capturing the target image. A sequence of images is captured with a second image sensor while the first image sensor remains activated. A determination is made as to whether the sequence of images captured by the second image sensor includes a shutter gesture while the first image sensor remains activated. If a shutter gesture is included in the sequence of images captured by the second image sensor, the first image sensor captures the target image in response.


Patent
OmniVision Technologies Inc. | Date: 2015-05-05

A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

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