CA, United States
CA, United States

Time filter

Source Type

A dual-mode image sensor with a signal-separating CFA includes a substrate including a plurality of photodiode regions and a plurality of tall spectral filters having a uniform first height and for transmitting a first electromagnetic wavelength range. Each of the tall spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of short spectral filters for transmitting one or more spectral bands within a second electromagnetic wavelength range. Each of the short spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of single-layer blocking filters for blocking the first electromagnetic wavelength range. Each single-layer blocking filter is disposed on a respective short spectral filter. Each single-layer blocking filter and its respective short spectral filter have a combined height substantially equal to the first height.


Patent
OmniVision Technologies Inc. | Date: 2017-01-04

Embodiments are disclosed of a color filter array including a plurality of tiled minimal repeating units. Each minimal repeating unit comprises a set of individual filters grouped into an array of M rows by N columns, wherein each set of individual filters includes a plurality of individual filters having at least first, second, third, and fourth spectral photoresponses. If M equals N, at least two directions within each minimal repeating unit include individual filters having all the spectral photoresponses, the at least two directions being selected from a set of directions consisting of row, column, major diagonal and minor diagonal. And if M N at least two directions within each of one or more N x N or M x M cells within the minimal repeating unit include individual filters having all the spectral photoresponses, the at least two directions being selected from a set of directions consisting of row, column, major diagonal and minor diagonal of each cell.


Patent
OmniVision Technologies Inc. | Date: 2016-04-12

A near-eye display device includes (a) a display unit for displaying a display image, (b) a viewing unit for presenting the display image to the eye and transmitting ambient light from an ambient scene toward the eye, and (c) an eye imaging unit including (i) an illumination module for generating at least three infrared light beams propagating along at least three different, non-coplanar directions, respectively, (ii) a first beamsplitter interface, disposed between the display unit and the viewing unit, for merging at least a portion of each of the infrared light beams with visible display light to direct each portion toward the eye via the viewing unit, and (iii) a camera for imaging, via the viewing unit and the first beamsplitter interface, pupil of the eye and reflections of the infrared light beams incident on the eye, to form one or more images indicative of gaze direction of the eye.


Patent
OmniVision Technologies Inc. | Date: 2016-03-02

An image sensor pixel includes a first photodiode and a second photodiode disposed in a semiconductor material. The first photodiode has a first doped region, a first lightly doped region, and a first highly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode, and includes a second doped region, a second lightly doped region, and a second highly doped region. The image sensor pixel also includes a first microlens optically coupled to direct a first amount of image light to the first photodiode, and a second microlens optically coupled to direct a second amount of image light to the second photodiode. The first amount of image light is larger than the second amount of image light.


Patent
OmniVision Technologies Inc. | Date: 2016-03-02

An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. A first aperture sizer is disposed above the second photodiode to limit image light received by the second photodiode to a second amount that is less than a first amount of image light received by the first photodiode.


Patent
OmniVision Technologies Inc. | Date: 2016-09-02

A method of focusing an image sensor includes scanning a first portion of an image frame from an image sensor a first time at a first rate to produce first focus data. A second portion of the image frame from the image sensor is scanned at a second rate to read image data from the second portion. The first rate is greater than the second rate. The first portion of the image frame is scanned a second time at the first rate to produce second focus data. The first focus data and the second focus data are compared, and the focus of a lens is adjusted in response to the comparison of the first focus data and the second focus data.


Patent
OmniVision Technologies Inc. | Date: 2016-09-15

A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an MN set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the same percentage of wavelengths that remain unfiltered by filters of a different photoresponse than the incident wavelength. Other embodiments are disclosed and claimed.


Patent
OmniVision Technologies Inc. | Date: 2016-08-15

Arrayed imaging systems include an array of detectors formed with a common base and a first array of layered optical elements, each one of the layered optical elements being optically connected with a detector in the array of detectors.


Patent
OmniVision Technologies Inc. | Date: 2016-09-21

An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.


Patent
OmniVision Technologies Inc. | Date: 2016-10-05

A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.

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