OmniVision Technologies Inc.

CA, United States

OmniVision Technologies Inc.

CA, United States

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A dual-mode image sensor with a signal-separating CFA includes a substrate including a plurality of photodiode regions and a plurality of tall spectral filters having a uniform first height and for transmitting a first electromagnetic wavelength range. Each of the tall spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of short spectral filters for transmitting one or more spectral bands within a second electromagnetic wavelength range. Each of the short spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of single-layer blocking filters for blocking the first electromagnetic wavelength range. Each single-layer blocking filter is disposed on a respective short spectral filter. Each single-layer blocking filter and its respective short spectral filter have a combined height substantially equal to the first height.


Patent
OmniVision Technologies Inc. | Date: 2017-01-04

Embodiments are disclosed of a color filter array including a plurality of tiled minimal repeating units. Each minimal repeating unit comprises a set of individual filters grouped into an array of M rows by N columns, wherein each set of individual filters includes a plurality of individual filters having at least first, second, third, and fourth spectral photoresponses. If M equals N, at least two directions within each minimal repeating unit include individual filters having all the spectral photoresponses, the at least two directions being selected from a set of directions consisting of row, column, major diagonal and minor diagonal. And if M N at least two directions within each of one or more N x N or M x M cells within the minimal repeating unit include individual filters having all the spectral photoresponses, the at least two directions being selected from a set of directions consisting of row, column, major diagonal and minor diagonal of each cell.


Patent
OmniVision Technologies Inc. | Date: 2015-11-12

A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to light. A global shutter transistor is disposed in the semiconductor material and is selectively resets the image charge in the photodiode in response to a global shutter control signal. A global shutter control signal generator circuit is coupled to generate the global shutter control signal to have a first value, a second value, and a third value. The first value of the global shutter control signal is coupled to turn on the global shutter transistor to reset the photodiode. The third value of the global shutter control signal is coupled to control the global shutter transistor to be in a low leakage off mode. The second value of the global shutter control signal is between the first and third values and is turns off the global shutter transistor.


Patent
OmniVision Technologies Inc. | Date: 2015-11-12

A pixel cell includes a photodiode to accumulate image charge. A global shutter transistor is coupled to the photodiode to reset the image charge in the photodiode in response to a global shutter control signal. A global shutter control signal generator circuit generates the global shutter control signal to have a first value signal or a second value signal. The first value signal is coupled to turn on the global shutter transistor to reset the photodiode. The second value signal controls the global shutter transistor to be in a low leakage off mode. A supply circuit is coupled to provide the second value signal to the global shutter control signal generator circuit. The supply circuit includes a variable filter circuit coupled to an output of the supply circuit to selectively vary a bandwidth of the second value signal in response to a bandwidth select signal.


Patent
OmniVision Technologies Inc. | Date: 2015-11-13

A novel head mounted display includes a display/image sensor. In a particular embodiment the display/image sensor is formed on a single silicon die, which includes display pixels and light sensor pixels. The display pixels and light sensor pixels are each arranged in rows and columns, and the arrays of light sensor pixels and display pixels are interlaced. The center of each light sensor pixel is located between adjacent rows and adjacent columns of display pixels.


Patent
OmniVision Technologies Inc. | Date: 2017-02-28

A spacer wafer for a wafer-level camera, a wafer-level camera including the spacer wafer and a method of manufacturing a spacer wafer include a layer of photoresist being formed over a substrate, the layer of photoresist being exposed to radiation through a mask that defines a spacer geometry for at least one wafer-level camera element. The layer photoresist is developed, such that the layer of photoresist is the spacer wafer for the wafer-level camera.


Patent
OmniVision Technologies Inc. | Date: 2016-01-14

An image sensor includes a photodiode disposed in semiconductor material. The photodiode is one of a plurality of photodiodes formed in an array. The image sensor also includes a floating diffusion disposed in the semiconductor material, and the floating diffusion is disposed adjacent to the photodiode in the plurality of photodiodes. A transfer gate is disposed to transfer image charge generated in the individual photodiode into the floating diffusion. Peripheral circuitry is disposed in the semiconductor material and includes a first electrical contact to the semiconductor material. A first silicide layer is disposed on the floating diffusion, a second silicide layer is disposed on the transfer gate, and a third silicide layer is disposed on the first electrical contact to the semiconductor material.


A novel method of forming an alignment layer of a liquid crystal display device includes the steps of providing a substrate (e.g., a processed silicon wafer, etc.) having an alignment layer material deposited thereon and applying a series of pulses from a pulse laser to anneal portions of the alignment layer material and alter its surface morphology. The method can include the step of depositing the alignment layer material (e.g., a spin-on dielectric including SiO_(2)) over the substrate using a spin-on process prior to laser annealing. Applying the series of laser pulses creates a repetitive pattern of features that facilitate alignment of liquid crystals according to a laser scan trace. Liquid crystal display devices with laser-annealed alignment layer(s) are also disclosed. The alignment layers of the invention are quickly and inexpensively applied and are very robust under prolonged, high-intensity light stress.


Patent
OmniVision Technologies Inc. | Date: 2016-08-17

An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.


Patent
OmniVision Technologies Inc. | Date: 2016-02-03

A method of image sensor fabrication includes providing a semiconductor material, an insulation layer, and a logic layer, where the semiconductor material includes a plurality of photodiodes. A through-semiconductor-via is formed which extends from the semiconductor material, through the insulation layer, and into the logic layer. The through-semiconductor-via is capped with a capping layer. A metal pad is disposed in a first trench in the semiconductor material. Insulating material is deposited on the capping layer, and in the first trench in the semiconductor material. A resist is deposited in a second trench in the insulating material, and the second trench in the insulating material is aligned with the metal pad. The insulating material is removed to expose the capping layer, and a portion of the capping layer disposed proximate to the plurality of photodiodes is also removed. A metal grid is formed proximate to the plurality of photodiodes.

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