CA, United States
CA, United States

Time filter

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A dual-mode image sensor with a signal-separating CFA includes a substrate including a plurality of photodiode regions and a plurality of tall spectral filters having a uniform first height and for transmitting a first electromagnetic wavelength range. Each of the tall spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of short spectral filters for transmitting one or more spectral bands within a second electromagnetic wavelength range. Each of the short spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of single-layer blocking filters for blocking the first electromagnetic wavelength range. Each single-layer blocking filter is disposed on a respective short spectral filter. Each single-layer blocking filter and its respective short spectral filter have a combined height substantially equal to the first height.


Patent
OmniVision Technologies Inc. | Date: 2017-01-04

Embodiments are disclosed of a color filter array including a plurality of tiled minimal repeating units. Each minimal repeating unit comprises a set of individual filters grouped into an array of M rows by N columns, wherein each set of individual filters includes a plurality of individual filters having at least first, second, third, and fourth spectral photoresponses. If M equals N, at least two directions within each minimal repeating unit include individual filters having all the spectral photoresponses, the at least two directions being selected from a set of directions consisting of row, column, major diagonal and minor diagonal. And if M N at least two directions within each of one or more N x N or M x M cells within the minimal repeating unit include individual filters having all the spectral photoresponses, the at least two directions being selected from a set of directions consisting of row, column, major diagonal and minor diagonal of each cell.


Patent
OmniVision Technologies Inc. | Date: 2015-11-12

A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to light. A global shutter transistor is disposed in the semiconductor material and is selectively resets the image charge in the photodiode in response to a global shutter control signal. A global shutter control signal generator circuit is coupled to generate the global shutter control signal to have a first value, a second value, and a third value. The first value of the global shutter control signal is coupled to turn on the global shutter transistor to reset the photodiode. The third value of the global shutter control signal is coupled to control the global shutter transistor to be in a low leakage off mode. The second value of the global shutter control signal is between the first and third values and is turns off the global shutter transistor.


Patent
OmniVision Technologies Inc. | Date: 2015-11-12

A pixel cell includes a photodiode to accumulate image charge. A global shutter transistor is coupled to the photodiode to reset the image charge in the photodiode in response to a global shutter control signal. A global shutter control signal generator circuit generates the global shutter control signal to have a first value signal or a second value signal. The first value signal is coupled to turn on the global shutter transistor to reset the photodiode. The second value signal controls the global shutter transistor to be in a low leakage off mode. A supply circuit is coupled to provide the second value signal to the global shutter control signal generator circuit. The supply circuit includes a variable filter circuit coupled to an output of the supply circuit to selectively vary a bandwidth of the second value signal in response to a bandwidth select signal.


Patent
OmniVision Technologies Inc. | Date: 2015-11-13

A novel head mounted display includes a display/image sensor. In a particular embodiment the display/image sensor is formed on a single silicon die, which includes display pixels and light sensor pixels. The display pixels and light sensor pixels are each arranged in rows and columns, and the arrays of light sensor pixels and display pixels are interlaced. The center of each light sensor pixel is located between adjacent rows and adjacent columns of display pixels.


Patent
OmniVision Technologies Inc. | Date: 2016-03-02

An image sensor pixel includes a first photodiode and a second photodiode disposed in a semiconductor material. The first photodiode has a first doped region, a first lightly doped region, and a first highly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode, and includes a second doped region, a second lightly doped region, and a second highly doped region. The image sensor pixel also includes a first microlens optically coupled to direct a first amount of image light to the first photodiode, and a second microlens optically coupled to direct a second amount of image light to the second photodiode. The first amount of image light is larger than the second amount of image light.


Patent
OmniVision Technologies Inc. | Date: 2016-09-02

A method of focusing an image sensor includes scanning a first portion of an image frame from an image sensor a first time at a first rate to produce first focus data. A second portion of the image frame from the image sensor is scanned at a second rate to read image data from the second portion. The first rate is greater than the second rate. The first portion of the image frame is scanned a second time at the first rate to produce second focus data. The first focus data and the second focus data are compared, and the focus of a lens is adjusted in response to the comparison of the first focus data and the second focus data.


Patent
OmniVision Technologies Inc. | Date: 2016-09-15

A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an MN set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the same percentage of wavelengths that remain unfiltered by filters of a different photoresponse than the incident wavelength. Other embodiments are disclosed and claimed.


Patent
OmniVision Technologies Inc. | Date: 2016-09-21

An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.


Patent
OmniVision Technologies Inc. | Date: 2016-10-05

A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.

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