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Aesch, Switzerland

TEL Solar is a manufacturer of production equipment for the manufacturing of thin-film silicon solar modules.TEL Solar owns the patent for the double junction thin film silicon technology from 1993. The two junctions consist of the amorphous silicon top cell and the microcrystalline silicon bottom cell. Micromorph is the brand name describing the amorphous/microcrystalline silicon tamdem cell. TEL Solar was the first to integrate boron doped zinc oxyde deposited by low pressure chemical vapour deposition as the Transparent Conductive Oxide layer, and the first to commercialize the high-efficiency Micromorph process. The majority of its customers upgraded from amorphous single junction to micromorph technology.TEL Solar is headquartered in Switzerland and has about 650 employees. The installed production capacity at its customer sites cumulates to 1 Giga Watt . TEL Solar maintains sales and service centers in the USA, Europe, China, Taiwan, Korea, Singapore and Japan. Wikipedia.


Patent
Oerlikon Solar Ltd. | Date: 2012-06-28

The invention relates to a roller drive device for use in a deposition system for manufacturing a photovoltaic device having a substrate (


Patent
Oerlikon Solar Ltd. | Date: 2011-06-09

A photovoltaic device is provided that includes a substrate, a first transparent conductive layer positioned on the substrate, a plurality of transparent conductive rods positioned on the first transparent conductive layer and having a growth direction, the growth direction extending in a direction away from the substrate, a photovoltaically active layer covering the plurality of transparent conductive rods rods and a conductive layer positioned on the photovoltaically active layer.


The photovoltaic cell comprises, deposited on a transparent substrate in the following order: a first conductive oxide layer; a first p-i-n junction; a second p-i-n junction; a second conductive oxide layer, wherein said first conductive oxide layer is substantially transparent and comprises a low-pressure chemical vapor deposited ZnO layer; and said second conductive oxide layer comprises an at least partially transparent low-pressure chemical vapor deposited ZnO layer; and wherein said first p-i-n junction comprises in the following order: a layer of p-doped a-Si:H deposited using PECVD and having at its end region facing toward said second p-i-n junction a higher band gap than at its end region facing toward said first conductive oxide layer; a buffer layer of a-Si:H deposited using PECVD without voluntary addition of a dopant; a layer of substantially intrinsic a-Si:H deposited using PECVD; a first layer of n-doped a-Si:H deposited using PECVD; and a layer of n-doped c-Si:H deposited using PECVD; and wherein said second p-i-n junction comprises in the following order a layer of p-doped c-Si:H deposited using PECVD; a layer of substantially intrinsic c-Si:H deposited using PECVD; and a second layer of n-doped a-Si:H deposited using PECVD. The photovoltaic converter panel comprises at least one such photovoltaic cell.


Patent
Oerlikon Solar Ltd. | Date: 2011-01-12

The present invention provides a mounting, configured for fixing a reactor, in particular a PECVD reactor, in a vacuum chamber (


Patent
Oerlikon Solar Ltd. | Date: 2011-04-29

A plasma reactor with a recipient (

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