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Kim J.-Y.,Gwangju Institute of Science and Technology | Kim J.-Y.,University of California at Davis | Kwon M.-K.,Gwangju Institute of Science and Technology | Kwon M.-K.,Chosun University | And 4 more authors.
Applied Physics Letters | Year: 2010

We report the development of a GaN-based green light-emitting diode (LED) with a selective area photonic crystal (SPC) structure, which was formed outside the p -bonding electrode on p -GaN. As a result, the optical output power of LEDs with SPC was enhanced by 78% compared to that without PC. In addition, the forward voltage, series resistance, and leakage current of LEDs with SPC were remarkably improved. These results show that the light extraction efficiency of green LEDs can be greatly increased using the SPC structure, with no degradation of electrical properties. © 2010 American Institute of Physics.


Grant
Agency: European Commission | Branch: H2020 | Program: IA | Phase: NMBP-17-2016 | Award Amount: 5.10M | Year: 2016

Advanced aRchitectures for ultra-thin high-efficiency CIGS solar cells with high Manufacturability (ARCIGS-M) This projects goal is advanced materials and nanotechnologies for novel CIGS PV device architectures with efficiencies 23.0 %, thus beyond that of the current state-of-the-art technologies. The technology targets the BIPV sector and enables several innovative solutions for BIPV. The novel functional materials and material combinations are (1) surface functionalized steel substrates, (2) nano-structuring strategies for optical management of rear contact layers, (3) passivation layers with nano-sized point openings, and (4) ultra-thin CIGS thin film absorber layers. The concepts will be developed and established in production viable equipment. Additionally, this new design will also increase the systems lifetime and materials resource efficiency, mainly due to the use of ultra-thin CIGS layers (less In and Ga), and barrier and passivation layers that hinder alkali metal movement. Hence, this project will lead to enhanced performance, but also yield and stability, while maintaining manufacturability. The consortium includes SMEs and industrial partners positioned throughout the complete solar module manufacturing value chain. Their roles will be to develop and commercialize new equipment, products and/or services. The consortium already pioneered the proposed advanced material solutions up to technology readiness level (TRL) 4, and this project targets to bring these innovative concepts to TRL 6 in a low-cost demonstrator. The aim is to develop and validate innovative, economic and sustainable BIPV applications, as a near future high value market for the European PV industries. An exploitation strategy, developed with the support of TTO (www.tto.dk), identifying BIPV as the most promising market has been used to validate the choice of technologies and will be further developed during the course of the project.


Grant
Agency: European Commission | Branch: FP7 | Program: CP-IP | Phase: NMP-2008-2.2-1 | Award Amount: 11.95M | Year: 2009

Solid state light sources based on compound semiconductors are opening a new era in general lighting and will contribute significantly to a sustainable energy saving. For a successful and broad penetration of LEDs into the general lighting market two key factors are required: high efficiency and low cost. Two new disruptive technologies based on nanostructured semiconductors are proposed to address these key factors. A novel epitaxial growth technique based on nanorod coalescence will be explored to realize ultra-low defect density templates which will enable strain-relieved growth of LEDs and thus achieve higher efficiency. The second highly innovative approach is the growth of directly emitting Gallium nitride based nanorod structures. These structures are expected to produce exceptionally high efficiency devices covering the whole visible spectrum and even phosphor-free white LEDs. Significantly, our new nanostructured compound semiconductor based technology will enable LED growth on low-cost and large-area substrates (e.g., Silicon) as wafer bowing will be eliminated and thus lead to a dramatic reduction in production costs. The main objectives over the three years are: Profound understanding of the growth mechanisms and properties of nanorod systems New materials and process technologies (wafer-scale nanoimprinting, dry etching, device processing) for LEDs based on nanostructured templates and nanorod-LEDs Demonstrators: -Phosphor-converted white LEDs based on nanostructured sapphire templates (efficacy 150 lm/W @ 350 mA) and Silicon templates (efficacy 100 lm/W @ 350 mA) -Blue, green, yellow and red emitting Nano-LEDs (external quantum efficiency 10%) -Novel phosphor-free white-emitting Nano-LEDs (external quantum efficiency 2%) Realising the objectives of SMASH will start a new generation of affordable, energy-efficient solid state light sources for the general lighting market and will push the LED lamp and luminaire business in Europe.


News Article | December 16, 2016
Site: www.prnewswire.co.uk

OBDUCAT AB (publ) subsidiary Obducat Technologies AB, a leading supplier of lithography solutions based on nanoimprint lithography (NIL), has signed an LOI with an Asian company in the LED industry. The LOI concerns the formation of a joint venture and thereto connected order for five Sindre 400 NIL systems at a preliminary value of 1 MEUR each. The LOI, which is non-legally binding, confirms the mutual interest of continuing the already initiated work related to the formation of a joint venture. The preliminary activities to be conducted in this joint venture are development and production of new products and applications based on NIL technology, as well as manufacturing of lithography equipment for the Asian market. If the joint venture is successfully established the counterparty's intention is to place an order for five Sindre 400 NIL systems at a preliminary value of 1 MEUR each. The negotiations are expected to be finalized during the first quarter 2017. This is information that Obducat AB (publ.) is required to disclose pursuant to the EU Market Abuse Regulation. The information was submitted for publication, through the agency of the contact persons set out below, on December 16th 2016 at 08.30 CET. This information was brought to you by Cision http://news.cision.com http://news.cision.com/obducat/r/obducat-signs-letter-of-intent-concerning-a-joint-venture-with-asian-led-player,c2151617 The following files are available for download:


Grant
Agency: European Commission | Branch: FP7 | Program: CP-FP | Phase: NMP.2013.1.1-2 | Award Amount: 5.15M | Year: 2014

Carbohydrate biomass constitutes an abundant and renewable resource that is attracting growing interest as a biomaterial. Convincingly the use of different natural elementary bricks, from oligosaccharides to fibers found in biomass, when mimicking self-assembly as Nature does, is a promising field towards innovative nanostructured biomaterials, leading to eco-friendly manufacturing processes of various devices. Indeed, the self-assembly at the nanoscale level of plant-based materials, via an elegant bottom-up approach, allows reaching very high-resolution patterning (sub-10nm) never attained to date by petroleum-based molecules, thus providing them with novel properties. GREENANOFILMS aims to use carbohydrates as elementary bricks (glycopolymers, cellulose nanocrystals and nanofibers) for the conception of ultra-high resolution nanostructured technical films to be used in various markets, from large volume sectors, such as (i) high-added value transparent flexible substrate for printed electronic applications, (ii) thin films for high-efficiency organic photovoltaics, to growing markets, such as (iii) next generation nanolithography and (iv) high-sensitivity SERS biosensors. GREENANOFILMS main impacts are the implementation of a new generation of ultra-nanostructured carbohydrate-materials that will play a prominent role in the achievement of the sustainability improvement of various opto- and bio-electronic sectors. A network of industrial end-user leaders is integrated in the project to facilitate the innovator-to-market perspective. The prospective environmental impacts and benefits of new green processes, eco-efficient nanomaterials and nanoproducts will be quantified with Life Cycle Assessment, risk assessment and validation of the industrial feasibility, including economic evaluation of the products. The results will be disseminated to the European smart paper, printed electronic, photovoltaic, display, security and health communities.


Grant
Agency: European Commission | Branch: FP7 | Program: CP | Phase: ICT-2009.3.3 | Award Amount: 13.81M | Year: 2010

The objective of the project is to realise high-performance organic electronic devices and circuits using large-area processing compatible fabrication methods. The high performance of the organic circuits referred to here means high speed (kHz-MHz range), low parasitic capacitance, low operating voltage, and low power consumption. The related organic thin film transistor (OTFT) fabrication development will be focused to enable a high resolution nanoimprinting lithography (NIL) step, which is compatible with roll-to-roll processing environment. Applying NIL will enable smaller transistor channel lengths (down below 1 m) and thereby an increase in the speed of the device. Another important concept to improve the performance is the self-aligned fabrication principle, in which the critical patterns of the different OTFT layers are automatically aligned in respect to each other during the fabrication. This decreases the parasitic capacitances and thereby increases the speed of the device, and is one of the key elements to enable the use of large-area fabrication techniques such as printing. Also complementary transistor technology will be developed, which will enable a decrease in operating voltage and power consumption. The high performance organic transistors will be tested in basic electronic building blocks such as inverters and ring oscillators. The technology development will be exploited in the active matrix liquid crystal display (AMLCD) and radio-frequency identification (RFID) demonstrators. In addition to showing that sufficient performance can be reached without sacrificing the mass fabrication approach, solutions for the fabrication of roll-to-roll tools in order to make serial replication viable will be provided. Finally, the design, characterization, and modeling of submicron low-power OTFTs will be done in order to support the fabrication of the demonstrators based on the technology developed in the project.


Grant
Agency: European Commission | Branch: FP7 | Program: CP | Phase: ENERGY.2012.10.2.1 | Award Amount: 3.99M | Year: 2012

The ambition of PhotoNvoltaics is to enable the development of a new and disruptive solar cell generation resulting from the marriage of crystalline-silicon photovoltaics (PV) with advanced light-trapping schemes from the field of nanophotonics. These two technologies will be allied through a third one, nanoimprint, an emerging lithography technique from the field of microelectronics. The outcome of this alliance will be a nano-textured thin-film crystalline silicon (c-Si) cell featuring a drastic reduction in silicon consumption and a greater cell and module process simplicity. It will thus ally the sustainability and efficiency of crystalline silicon PV with the simplicity and low cost of the current thin-film solar cells. The challenge behind PhotoNvoltaics lies behind the successful identification and integration of these nano-textures into thin c-Si-based cells, which aim is a record boost of the light-collection efficiency of these cells, without harming their charge-collection efficiency. The goals of this project are scientific and technological. The scientific goal is two-fold: (1) to demonstrate that the so-called Yablonovitch limit of light trapping can be overcome, with specific nanoscale surface structures, periodic, random or pseudo-periodic, and (2) to answer the old question whether random or periodic patterns are best. The technological goal is also two-fold: (1) to fabricate thin c-Si solar cells with the highest current enhancement ever reached and (2) to demonstrate the up-scalability of this concept by fabricating patterns over industrially relevant areas. To reach these goals, PhotoNvoltaics will gather seven partners, expert in all the required fields to model and identify the optimal structures, fabricate them with a large span of techniques, integrate them into solar cells and, finally, assess the conditions of transferability of these novel concepts, that bring nanophotonics into PV, further towards industry.


Grant
Agency: European Commission | Branch: FP7 | Program: CP | Phase: ICT-2007.3.6 | Award Amount: 4.72M | Year: 2008

The TERAMAGSTOR project aims through a systems approach at designing, fabricating and testing future perpendicular magnetic storage media with areal density larger than 1 Tbit/in2. To overcome the technological barriers limiting the areal density, the proposed approaches address both key media feasibility issues (thermal stability, writability, signal to noise ratio) and low cost, high throughput media fabrication methods. The approaches are based on the development of advanced film media (exchange spring and percolated media), nanolithographically patterned and nanoparticles patterned by templates through an integration of professional skills (chemists, physicists, engineers, materials scientists).The activity will cover media preparation and characterisation, magnetization reversal processes, numerical micromagnetic simulations, measurements of write/read recording characteristics and signal modelling and processing. The innovation and the ultimate goal is to produce the first EU 1.8 /2.5\nHD with density in excess of 1 Tbit/in2 , through synergistic approach using EU groups and the exploitation by the two IND .It is based on previous work by most of the consortium members, which led to a record of 220 Gbits/in2 (Descartes prize 2005). The expected impact of TERAMAGSTOR is to open the way to a new generation of ultrahigh density magnetic recording media, through a basic investigation of magnetic phenomena in the nanoregime and the development of new fabrication processes, favouring the EU technological progress and competitiveness in the key technological area of magnetic storage and in general to the ICT business.


Munshi A.M.,Norwegian University of Science and Technology | Dheeraj D.L.,Norwegian University of Science and Technology | Fauske V.T.,Norwegian University of Science and Technology | Kim D.C.,Norwegian University of Science and Technology | And 9 more authors.
Nano Letters | Year: 2014

We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are defined in a SiO2 mask on 2 in. Si wafers using nanoimprint lithography (NIL) for the growth of positioned GaAs NWs. To optimize the yield of vertical NWs the MBE growth parameter space is tuned, including Ga predeposition time, Ga and As fluxes, growth temperature, and annealing treatment prior to NW growth. In addition, a non-negligible radial growth is observed with increasing growth time and is found to be independent of the As species (i.e., As2 or As4) and the growth temperatures studied. Cross-sectional transmission electron microscopy analysis of the GaAs NW/Si substrate heterointerface reveals an epitaxial growth where NW base fills the oxide hole opening and eventually extends over the oxide mask. These findings have important implications for NW-based device designs with axial and radial p-n junctions. Finally, NIL positioned GaAs/AlGaAs core-shell heterostructured NWs are grown on Si to study the optical properties of the NWs. Room-temperature photoluminescence spectroscopy of ensembles of as-grown core-shell NWs reveals uniform and high optical quality, as required for the subsequent device applications. The combination of NIL and MBE thereby demonstrates the successful heterogeneous integration of highly uniform GaAs NWs on Si, important for fabricating high throughput, large-area position-controlled NW arrays for various optoelectronic device applications. © 2014 American Chemical Society.


Grant
Agency: European Commission | Branch: FP7 | Program: CP | Phase: ICT-2007.3.6 | Award Amount: 5.04M | Year: 2008

Our economy is more and more driven by content and leveraged by high performance, cost-effective hardware and storage. Today people collect create and share more and more digital information. Very high-definition video and social networking will fuel the storage demand further. Optical memories are one of the most successful data storage technologies, economically and technically. In 2007, around 700 million optical disc drives and 36 billion discs have been manufactured. Optical memories ideally combine media removability, media longevity, random access, lowest costs and are today the dominant consumer storage format for content distribution and archival. However, the conventional bit recording technology (like BD and HD-DVD) has been pushed already close to its practical limits. To further increase the effective data density several technologies exist: multi-layer, optical super resolution, optical near-field technologies, Super-RENS (Super Resolution Near-field Structure) and advanced channel modulation/coding. The next generation optical storage systems for practical application in 3\ years from today will likely be provided by a mixture of these evolving and future technologies. The objective of this project is to investigate the above mentioned technologies and their combination. Specific key components such as -SIL, laser spot confinement optics, cross talk cancellation, advanced methods for modulation and coding and stampers and layer structures for read-only and rewritable discs will be developed. The expected outcome is the specification and demonstration of an optical storage system with a capacity of 200 to 400 GByte on a 12 cm disc. This will be the technological basis for a new-generation optical storage format required consumer applications. The scope of this project fits to the call objective 3.6 Micro-/Nanosystems with expected outcomes for high density mass storage for next generation smart systems.

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