OAO INTEGRAL

Minsk, Belarus

OAO INTEGRAL

Minsk, Belarus
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Khomchenko A.V.,Belarusian-Russian University | Primak I.U.,Belarusian-Russian University | Sotsky A.B.,Mogilev State University | Korneeva I.A.,Belarusian-Russian University | And 2 more authors.
Bulletin of the Russian Academy of Sciences: Physics | Year: 2016

A new noncontact technique is proposed for determining the parameters of nanosized metal coatings (absorption coefficients, refractive indices, and thicknesses). It is based on processing the measured angular dependence of the energy reflection coefficient of a polarized laser beam reflected by a thin-film structure surface. Features of determining the parameters of films on silicon substrates have been considered. © 2016, Allerton Press, Inc.


Stas'kov N.I.,Mogilev State University | Ivashkevich I.V.,Mogilev State University | Krekoten N.A.,OAO Integral | Ukhov V.A.,OAO Integral | Petlitskii A.N.,OAO Integral
Optics and Spectroscopy (English translation of Optika i Spektroskopiya) | Year: 2011

We discuss the solutions of the inverse problem of multiangle ellipsometry for titanium with a nat- ural surface layer, namely, the determination of the thickness of the near-surface layer and optical character- istics by use of which one can interpret the titanium structure. It turned out that the studied samples of pure polycrystalline titanium have a rather thick inhomogeneous layer of polycrystalline titanium with oxygen and, on this layer, there is a surface layer similar to titanium oxide. The data on the optical characteristics of pure polycrystalline titanium agree well with those determined earlier by other optical methods. © Pleiades Publishing, Ltd., 2011.


Stas'kov N.I.,Mogilev State University | Sotsky A.B.,Mogilev State University | Sotskaya L.I.,Belarusian-Russian University | Petlitskii A.N.,OAO Integral
Optics and Spectroscopy (English translation of Optika i Spektroskopiya) | Year: 2012

The solution of the inverse problem of spectral ellipsometry is obtained for titanium with a surface layer of titanium oxide that was formed as a result of thermal (450°C) oxidation of the metal substrate. Using the Drude-Zener and Cauchy dispersion models, it is shown that a rather thick (46 nm) inhomogeneous binary surface layer including about 23% of titanium and 77% of titanium oxide is present on the studied samples of pure polycrystalline titanium. A natural weakly absorbing surface layer with a thickness of 13 nm is on this layer. © 2012 Pleiades Publishing, Ltd.


Brinkevich D.I.,Belarusian State University | Vabishchevich N.V.,Polotsk State University | Vabishchevich S.A.,Polotsk State University | Petlitski A.N.,OAO INTEGRAL | And 2 more authors.
Journal of Surface Investigation | Year: 2013

The influence of an oxide coating on the strength characteristics of single-crystal silicon surface layers is investigated by the microindentation method. It is shown experimentally that a strengthened layer with a thickness of 0.2-0.4 μm and a microhardness of 20-35 GPa, which is two or three times as much as the microhardness of bulk single-crystal silicon, is present near the SiO2/Si interface. The thickness and microhardness of this layer depends on the growth conditions of the oxide. The formation of this layer is most probably caused by interstitial silicon atoms formed near the SiO2/Si interface during silicon oxidation. © 2013 Pleiades Publishing, Ltd.


Vasilev Y.B.,OAO Integral | Verezub N.A.,RAS Institute of Applied Mechanics | Mezhennyi M.V.,Institute of Chemical Problems of Microelectronics Bolshoi | Prosolovich V.S.,Belarussian State University | And 2 more authors.
Russian Microelectronics | Year: 2013

Possibilities of obtaining a defect-free layer in wafers of dislocation-free single-crystal silicon subjected to rapid thermal annealing (RTA) are analyzed. The application of RTA is based on the possibility of effectively affecting the distribution profile of the density of oxygen precipitates over the wafer thickness by means of controlling the distribution profiles of the vacancies and interstitial atoms. However, the solution of this important task encounters the problem of the appearance of large local stresses in the vicinity of the fastening supports of a large-diameter silicon wafer and its bending in the course of RTA, which are caused by its own weight. Using mathematical modeling of the three-dimensional stress-strain state and defect formation in large-diameter silicon wafers in the course of RTA, various methods of fastening the wafers are considered and the possibilities of lowering the stress-strain state of the silicon wafer are determined. A mathematical model taking into account the diffusion-recombination processes of vacancies and interstitial silicon atoms, as well as the formation of vacancy clusters is proposed to describe the defect formation in the course of RTA. Based on this model, temperature-temporal parameters of RTA, which correspond to the required (depleted near the surface) concentration profile of the vacancies and the density and size of the vacancy clusters over the wafer thickness, are determined (heating time, holding time at the highest temperature, the cooling rate of the wafer). The results of the calculations are verified for test samples using optical microscopy and transmission electron microscopy (OM and TEM). © 2013 Pleiades Publishing, Ltd.


Chaplanov A.M.,National Academy of Sciences of Belarus | Markevich M.I.,National Academy of Sciences of Belarus | Malyshko A.N.,National Academy of Sciences of Belarus | Shcherbakova Y.N.,National Academy of Sciences of Belarus | And 4 more authors.
Bulletin of the Russian Academy of Sciences: Physics | Year: 2015

Electron diffraction methods in reflection geometry are used to investigate the distinctive features of phase transformations that occur in a NiV–Pt–Si system during stationary stepped annealing. A platinum film 0.015–0.02 µm thick and then a vanadium-alloyed nickel film 0.08 µm thick are magnetron-sputtered on the surface of a silicon wafer of KEF-0.5 grade with (111) orientation. Annealing is performed in a nitrogen atmosphere. It is shown that depending on the degree of homogenization of the mutual Ni–Pt solid solution and the interaction at the Pt–Si interface at the first step of annealing, which lasts for long periods of time at temperatures of 240 or 350°C, subsequent high-temperature annealing at 550°C for 30 min leads to the formation of Ni1–xPtxSi- or Pt1–xNixSi silicides with NiSi- or PtSi-type crystal lattices. © 2015, Allerton Press, Inc.

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