OAO Giredmet

Moscow, Russia

OAO Giredmet

Moscow, Russia
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Simutin A.S.,Dukhov All Russia Research Institute of Automatics | Chernov M.Y.,Dukhov All Russia Research Institute of Automatics | Gasanov A.A.,OAO Giredmet | Orlov A.D.,RAS Institute of Solid State Physics | And 2 more authors.
Instruments and Experimental Techniques | Year: 2013

Results of investigations of the scintillation detector based on a LaBr3:Ce crystal and a ΦCyrillic capital letter EY-184 photomultiplier tube are presented. It is shown that, optimizing the ΦCyrillic capital letter EY-184 photomultiplier tube circuit by reading out the signal from the next to last dynode, it is possible to utilize the spectrometric properties of the LaBr3:Ce crystal. © 2013 Pleiades Publishing, Inc.

Gazizov I.M.,OAO Institute of Physical Technical Problems | Zaletin V.M.,Dubna University | Kukushkin V.M.,OAO Institute of Physical Technical Problems | Kuznetsov M.S.,OAO GIREDMET | Lisitsky I.S.,OAO GIREDMET
Semiconductors | Year: 2012

The kinetics of the photocurrent response in doped and undoped TlBr samples subjected to irradiation with γ-ray photons from a 137Cs source with the dose rate 0. 033 to 3. 84 Gy/min are studied. The crystals were grown by the directional crystallization of the melt method using the Bridgman-Stockbarger technique. The Pb impurity mass fraction introduced into the doped TlBr crystals was 1-10 ppm and amounted to 150 ppm for the Ca impurity. The crystals were grown in a vacuum, in bromine vapors, in a hydrogen atmosphere, and in air. Decay of the photocurrent is observed for extrinsic semiconductor crystals doped with bivalent cations (irrespective of the growth atmosphere), and also for crystals grown in hydrogen and crystals grown in an excess of thallium. The time constant of photocurrent decay τ amounted to 30-1400 s and was proportional to resistivity. It is shown that the current response can be related to photolysis in the TlBr crystals during irradiation with γ-ray photons. The energy of hole traps responsible for a slow increase in the photo-current has been estimated and found to be equal to 0. 6-0. 85 eV. © 2012 Pleiades Publishing, Ltd.

Levinsky Y.V.,Lomonosov Moscow University of Fine Chemical Technology | Patrikeev Y.B.,OAO GIREDMET | Filyand Y.M.,OAO GIREDMET
Russian Journal of Non-Ferrous Metals | Year: 2011

The kinetics of hydrogen absorption by a powder of yttrium dihydride is investigated. A sample having a known specific surface area and a composition close to the lower concentration boundary of the homogeneity region of dihydride is saturated with hydrogen in a Siverts apparatus at 300-450°C and hydrogen pressures of 5-45 kPa. The diffusivities of hydrogen (DH) are evaluated on the basis of absorption kinetic curves using a previously developed technique based on the possibility of ignoring the surface curvature at degrees of saturation tending to zero. The temperature dependence of DH (m2/s) in the range of 300-450°C is log DH = -12.7 - 1770/T. © 2011 Allerton Press, Inc.

Kuz'Micheva G.M.,Lomonosov Moscow University of Fine Chemical Technology | Savinkina E.V.,Lomonosov Moscow University of Fine Chemical Technology | Belogorokhova L.I.,Moscow State University | Mavrin B.N.,Russian Academy of Sciences | And 3 more authors.
Russian Journal of Physical Chemistry A | Year: 2011

The nanosized η-TiO2 polymorph was prepared by the hydrolysis of titanyl sulfate (TiO)SO4 • xH2SO 4 • yH2O. η-TiO2 was studied by X-ray diffraction, X-ray photoelectron spectroscopy, IR spectroscopy, and Raman spectroscopy. Characteristic X-ray data and distinguishing Raman spectrum features were found for η-TiO2,. The surface of η-TiO 2 samples contained adsorbed OH- particles and water molecules or water molecules of crystal hydrates. The free specific surface area of samples with crystallite sizes of L = 50 (4) and 60 (5) Å was S = 10.17 (9) and 15.6 (1) m2/g. The characteristics of samples with η-TiO2 were favorable for their use as photocatalysts and adsorbents. © 2011 Pleiades Publishing, Ltd.

Kharlamova M.V.,Moscow State University | Eliseev A.A.,Moscow State University | Yashina L.V.,Moscow State University | Petukhov D.I.,Moscow State University | And 4 more authors.
JETP Letters | Year: 2010

Single-walled carbon nanotubes have been filled with cobalt bromide. The microstructure, optical properties, and effect of the introduced CoBr 2 compound on the electronic structure of the nanotubes have been studied. It has been shown that the electron density in the resulting nanocomposites is transferred from the walls of the nanotubes to the nanocrystals of cobalt bromide, which is an electron acceptor. © Pleiades Publishing, Inc., 2010.

Orlov A.F.,OAO Giredmet | Kulemanov I.V.,OAO Giredmet | Parkhomenko Y.N.,OAO Giredmet | Perov N.S.,Moscow State University | Semisalova A.S.,Moscow State University
Russian Microelectronics | Year: 2012

The state and outlook of works on the creation of ferromagnetic semiconductor materials for applications in spin electronics and informatics units are considered. The obtained results on promising ferromagnetic semiconductor material classes-doped elementary semiconductors, AIIIBV compounds, and semiconductor oxides-are given. Unsolved problems in the considered area are indicated and possible ways of their solutions are outlined. © Pleiades Publishing, Ltd., 2012.

Burlakov I.D.,OAO NPO Orion | Denisov I.A.,OAO Giredmet | Sizov A.L.,OAO NPO Orion | Silina A.A.,Moscow State University | Smirnova N.A.,OAO Giredmet
Journal of Communications Technology and Electronics | Year: 2016

The results of measurements of the root-mean-square (rms) surface roughness of CdZnTe substrates by confocal microscopy (CM), atomic force microscopy (AFM), and X-ray reflectometry (XRR) are compared. It is determined that CM yields the highest rms roughness values, AFM assumes an intermediate position, and XRR measurements produce results that are an order of magnitude lower than those obtained with the use of the other two techniques. It is demonstrated that CM rms roughness values depend to a considerable extent on the type of the microscope objective used in experiments. Probable reasons for the discrepancy between the obtained results are discussed. © 2016, Pleiades Publishing, Inc.

Kartavykh A.V.,Institute of Chemical Problems of Microelectronics IKhPM | Chinarov V.V.,OAO GIREDMET
Inorganic Materials | Year: 2011

A simple laboratory technological bench (low-inertial high-temperature electric furnace) with a resistance plane heater based on SiC is produced. The bench makes it possible to carry out the spatial isothermal thermal treatment of samples with a volume of up to 8 cm 3, which are placed in the heater, with a controlled thermal cycle at temperatures of up to 2400°C within the inertial gas flow, including their hardening at the final stage of the process at a rate of up to 20°C/s. The photography and the video filming of the sample under test together with optical pyrometric control of its temperature can be carried out by means of a removable quartz or sapphire body of a reactor. Possible fields of application of the bench and the experimental technological and materials science problems are considered. Examples of the comparative investigation of the chemical compatibility of intermetal refractory alloy TiAl-Nb with crucible oxygen-free special ceramics AlN and BN during melting, superheating, fixed isochronous-isothermal holding of the melt at 1670°C, and its abrupt crystallization within test cymbiform crucibles in high-purity Ar are presented. © 2011 Pleiades Publishing, Ltd.

Belogorokhov I.A.,OAO Giredmet | Dronov M.A.,Moscow State University | Tikhonov E.V.,Moscow State University | Pushkarev V.E.,Moscow State University | And 2 more authors.
JETP Letters | Year: 2010

The frequency dependences of the imaginary and real parts of the permittivity of organic semiconductors based on butyl-substituted erbium monophthalocyanine have been obtained. The static permittivity and damping factor, which characterizes the relaxation processes in the ensemble of phthalocyanine complexes, have been determined by fitting these dependences in the dipole approximation. © 2010 Pleiades Publishing, Ltd.

Balagurov L.A.,OAO Giredmet | Kulemanov I.V.,OAO Giredmet | Orlov A.F.,OAO Giredmet | Petrova E.A.,OAO Giredmet
Russian Microelectronics | Year: 2012

Much attention to electrical properties of titanium dioxide is due to the fact that it has recently started to be used in the manufacture of various electronic devices. Temperature dependences of the directcurrent (DC) and alternating-current (AC) conductivities of titanium dioxide layers doped with vanadium, as well as simultaneously with cobalt and niobium, are studied. The layers were produced by the high-frequency magnetron deposition in an oxygen/argon environment at a temperature of 550°C, vacuum of 2 ×10-2 Torr, and a 0.07-nm/s deposition rate. Below room temperature, the electrical conductivity of vanadium-doped titanium dioxide is specified by a variable range-hopping conduction. The localized state density is estimated at the Fermi level. A tunneling conductance with thermal activation of carriers between clusters, presumably cobalt clusters, is detected for samples doped with cobalt and niobium. It is shown that the measurement of the dependence of the electrical resistance on the temperature is a fast and reliable method for determining the presence of clusters in a material. © Pleiades Publishing, Ltd., 2012.

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