NXP Research

Eindhoven, Netherlands

NXP Research

Eindhoven, Netherlands
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Schober A.,University of Graz | Ciacci M.,NXP Research | Gebhart M.,NXP Semiconductors
Proceedings of the 12th International Conference on Telecommunications, ConTEL 2013 | Year: 2013

The near-field communication channel is mainly determined by the coupling of two resonant loop antennas and their HF system properties. Such properties change dynamically during operation, affecting significantly power transfer and communication performance. Both these effects are related to an impedance mismatch which arises due to a varying coupling factor. In this paper we present a Matlab-based network simulation model which allows to estimate impedance and contactless performance aspects as a function of coupling, and to determine appropriate impedance matching and antenna design parameters. © 2013 University of Zagreb.


Magnone P.,University of Bologna | Crupi F.,University of Calabria | Mercha A.,IMEC | Andricciola P.,NXP Semiconductors | And 2 more authors.
IEEE Transactions on Electron Devices | Year: 2010

In this paper, we study the draincurrent mismatch of FinFETs in subthreshold, from both modeling and experimental point of view. We propose a simple model that takes into account the effect of threshold voltage and subthreshold swing fluctuations and their correlation. For long-channel devices (longer than a critical length LC), characterized by a subthreshold swing close to the ideal value, the overall current mismatch is dominated by threshold voltage fluctuations and, therefore, is gate voltage independent. The subthreshold swing fluctuations give a negligible effect on the draincurrent mismatch and are uncorrelated with the threshold voltage fluctuations. For short-channel devices (shorter than a critical length LC), characterized by a strong dependence of subthreshold swing on the channel length, the overall current mismatch presents an additional relevant contribution associated with the subthreshold swing fluctuations. This component depends on the gate voltage overdrive and is ascribed to the gate line edge roughness, resulting in a partial correlation between threshold voltage and subthreshold swing fluctuations. © 2010 IEEE.


Van Der Avoort C.,NXP Research | Van Der Hout R.,VU University Amsterdam | Bontemps J.J.M.,NXP Research | Steeneken P.G.,NXP Research | And 4 more authors.
Journal of Micromechanics and Microengineering | Year: 2010

This paper describes a phenomenon that limits the power handling of MEMS resonators. It is observed that above a certain driving level, the resonance amplitude becomes independent of the driving level. In contrast to previous studies of power handling of MEMS resonators, it is found that this amplitude saturation cannot be explained by nonlinear terms in the spring constant or electrostatic force. Instead we show that the amplitude in our experiments is limited by nonlinear terms in the equation of motion which couple the in-plane length-extensional resonance mode to one or more out-of-plane (OOP) bending modes. We present experimental evidence for the autoparametric excitation of these OOP modes using a vibrometer. The measurements are compared to a model that can be used to predict a power-handling limit for MEMS resonators. © 2010 IOP Publishing Ltd.


Iellina M.,University of Udine | Palestri P.,University of Udine | Akil N.,Photovoltech | Van Duuren M.J.,NXP Research | And 3 more authors.
IEEE Transactions on Electron Devices | Year: 2010

In this paper, we investigate the operating principle and the injection efficiency of the punch-through-assisted hot hole injection mechanism for programming nonvolatile memory cells by means of full-band Monte Carlo transport simulations of realistic device structures. The effects of terminal bias and cell scaling on the injection efficiency and the uniformity of charge injection along the channel are analyzed in detail. © 2010 IEEE.


Van Dalen R.,NXP Semiconductors | Dhar S.,NXP Research | Heringa A.,NXP Research | Swanenberg M.J.,NXP Semiconductors | And 3 more authors.
Proceedings of the International Symposium on Power Semiconductor Devices and ICs | Year: 2011

Optimisation of High Voltage (HV) devices is typically governed by life-time considerations, most notably requirements for sufficient immunity against Hot Carrier Injection (HCI). Based on insight in the different degradation mechanisms in HV-SOI, we have identified distinctive acceleration methodologies for on- and off-state stress conditions. © 2011 IEEE.


Scholten A.J.,HIGH-TECH | Vanhoucke T.,NXP Research | Klaassen D.B.M.,HIGH-TECH
Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting | Year: 2012

We present an extensive investigation into the temperature and geometry dependence of the electrothermal instability of bipolar transistors. It is shown that the stable operating region increases with decreasing transistor size, which is explained by the geometry dependence of the thermal and base resistances. Next, data taken over a large range of temperatures (-40 to 150 °C) are analyzed. It is shown that, for the technology at hand, an additional margin of 1V above BVCEO is present for the full temperature range. Moreover, it is shown that the temperature-dependent data can be reduced to a single master curve by plotting the instability point versus the collector current at VCB 0 V. This leads to a simple rule-of-thumb that can be used by circuit designers to estimate the limit of stable operation at all temperatures. © 2012 IEEE.


Van Dalen R.,NXP Semiconductors | Heringa A.,NXP research | Boos P.W.M.,NXP Semiconductors | Van Der Wal A.B.,NXP Semiconductors | Swanenberg M.J.,NXP Semiconductors
Proceedings of the International Symposium on Power Semiconductor Devices and ICs | Year: 2010

In this work we present an alternative Hot Carrier Injection (HCI) characterisation technique for SOI based HV devices based on the analysis of the avalanche current at sub-threshold gate bias as a function of applied drain voltage (multiplication). This technique is shown to enable an accurate extraction of the electrical field distribution within the device which, when used during HCI stress, pinpoints the exact location of the charge injection without need of extra contacts, field plates or special measurement structures.


Booij O.,University of Amsterdam | Krose B.,University of Amsterdam | Zivkovic Z.,NXP Research
Robotics: Science and Systems | Year: 2011

Estimating the relative pose between two camera positions given image point correspondences is a vital task in most view based SLAM and robot navigation approaches. In order to improve the robustness to noise and false point correspondences it is common to incorporate the constraint that the robot moves over a planar surface, as is the case for most indoor and outdoor mapping applications. We propose a novel estimation method that determines the full likelihood in the space of all possible planar relative poses. The likelihood function can be learned from existing data using standard Bayesian methods and is efficiently stored in a low dimensional look up table. Estimating the likelihood of a new pose given a set of correspondences boils down to a simple look up. As a result, the proposed method allows for very efficient creation of pose constraints for vision based SLAM applications, including a proper estimate of its uncertainty. It can handle ambiguous image data, such as acquired in long corridors, naturally. The method can be trained using either artificial or real data, and is applied on both controlled simulated data and challenging images taken in real home environments. By computing the maximum likelihood estimate we can compare our approach with state of the art estimators based on a combination of RANSAC and iterative reweighted least squares and show a significant increase in both the efficiency and accuracy.


Gangwal O.P.,NXP Research | Djapic B.,HIGH-TECH
ICCE 2010 - 2010 Digest of Technical Papers International Conference on Consumer Electronics | Year: 2010

Automatically generated depth maps from video are usually not aligned with the objects in the original image and produced at lower resolutions. We propose to apply a joint-bilateral filter to smoothen the depth map within the objects and upsample it to the original image resolution, while keeping the object edges in the depth map aligned with the original image. We performed algorithmic and ASIC specific optimizations to achieve a real-time implementation in dedicated hardware, while preserving high quality results. Upsampling depth maps from 240x135@60Hz to 1920x1080@60Hz, requires 0.35 mm2, at 200 MHz, for a dedicated hardware implementation in CMOS 45 nm technology. ©2010 IEEE.


Puliyankot V.,MESA Institute for Nanotechnology | Piccolo G.,MESA Institute for Nanotechnology | Hueting R.J.E.,MESA Institute for Nanotechnology | Heringa A.,NXP Research | And 2 more authors.
IEEE International Conference on Group IV Photonics GFP | Year: 2011

This paper demonstrates increased light emission in Si p-i-n light emitting diodes (LEDs) by changing the geometry of the device. The theory behind this, the device fabrication, electrical and optical characteristics are also presented. Reducing the injector size, decreases the diffusion current as shown by IV measurements and simulations. As a result, for a particular on- current the pn-product and hence light increases inside the active region for the new devices. The electroluminescence (EL) intensity measurements show an enhanced light emission by more than a factor of four. © 2011 IEEE.

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