Nve Corporation | Date: 2011-04-27
A current determiner comprising a first input conductor and a first current sensor, formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic layer positioned therebetween, and both supported on a substrate adjacent to but electrically isolated from one another with the first current sensor positioned in those magnetic fields arising from any input currents. A first shield/concentrator of a material exhibiting a substantial magnetic permeability is positioned between the substrate and the first input conductor. The substrate can include a monolithic integrated circuit structure containing electronic circuit components of which at least one is electrically connected to the first input conductor. A similar second current sensor can be individually formed, but can also be in the current determiner structure that is supported on the substrate along with a second input conductor supported on the substrate suited for conducting input currents therethrough. This second input conductor is positioned at that side of the second current sensor opposite to that side thereof facing the substrate so as to be adjacent to but electrically isolated from one another on the substrate although having the second current sensor positioned in those magnetic fields arising from the input currents in the second input conductor. In addition, a second shield/concentrator layer of material exhibiting a substantial magnetic permeability to serve as a magnetic field concentrator is positioned at that side of the second input conductor opposite to that side thereof facing the substrate. In the first instance, the second shield/concentrator layer is electrically connected to the second input conductor, and can be so connected in the second instance. Magnetically permeable material can be provided in supporting structures.
Nve Corporation | Date: 2012-09-14
A tamper sensing system mounted with respect to a protected structure so as to have corresponding stress changes occur therein in response to selected kinds of tamperings with said protected structure comprising a first pair of stress affected magnetoresistive memory devices each capable of having a magnetic material layer therein established in a selected one of a pair of alternative magnetization states if in a first kind of stress condition and of being established in a single magnetization state if in an alternative second kind of stress condition, and the magnetic material layer in each having a magnetization in a first direction in one of the pair of alternative magnetization states and in a second direction in that remaining one of the pair of magnetization states. A first magnetizing electrical conductor extends adjacent to each of the first pair of stress affected magnetoresistive memory devices to establish said magnetic material layer in that one of said pair of alternative magnetization states thereof so as to have its said corresponding magnetization be oppositely directed with respect to said magnetization of that other. The first pair of stress affected magnetoresistive memory devices can each be provided by a spin dependent tunneling device having differing numbers of magnetization states available thereto depending on whether being in differing ones of alternative stress conditions
Agency: Department of Health and Human Services | Branch: National Institutes of Health | Program: SBIR | Phase: Phase I | Award Amount: 149.04K | Year: 2016
DESCRIPTION provided by applicant The goal of this Small Business Innovative Research project proposed to the National Institutes of Health in particular the National Institute on Deafness and Other Communication Disorders is the creation of a superior signal receiving component in hearing aids The proposed advanced magnetic field pickup will increase the potential to wirelessly link the hearing aids with handheld electronic devices allowing highly personalized and environmentally specific sound filtering and amplification to take place within the software or andquot appsandquot on the handheld device The proposed pickup uses magnetic tunnel junction MTJ technology to create a solid state magnetic field sensor a receiver for magnetic signals broadcast from the handheld device The proposed pickup is superior to the legacy telecoil in size power consumption and sensitivity over the full acoustic frequency spectrum The component offers significant improvement to the acoustic signal quality and enables a shift to simplify the in ear signal processing needs thus lowering hearing aid costs and increasing battery lifetime The specific goals for the pre prototype device are broadband response a minimum detectable signal of Oe Hz and a power draw of less than Watts in continuous operation The device size is expected to be at or less than mm on a side PUBLIC HEALTH RELEVANCE Advanced Magnetic Pickup for Hearing Aids Project Narrative The project goal will assist the hearing impaired by providing a higher quality of sound coming from standard hearing aids Hearing aids equipped with the proposed component will be better able to pick up magnetic signals from telephones electronic devices and auditorium loop broadcasting The component provides new links to computers and telecommunication devices
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase I | Award Amount: 124.93K | Year: 2015
This Small Business Innovation Research Phase I proposal will demonstrate the feasibility of an ultra-low power radio frequency (RF) field sensor based on novel magnetic tunnel junction (MTJ) technology. The sensor will be comprised of an MTJ sensing element that, when placed in a component or system, will monitor for perturbations in the ambient RF field profile during various stages of operation. The configured sensor is environmentally robust and is sensitive to the field direction. This project will also develop a low power complementary metal oxide semiconductor (CMOS) concept to provide digital readout of the measured signal with post processing to look for perturbations to be done off-chip. The results of this effort will provide a concise path forward for the fabrication of prototype sensors in the Phase II program. Approved for Public Release 14-MDA-8047 (14 Nov 14)
Nve Corporation | Date: 2011-12-30
An MTJ sensor having low hysteresis and high sensitivity is disclosed. The MTJ sensor includes, in one embodiment, a bridge with first and second active MTJ elements and first and second passive MTJ elements connected in a Wheatstone bridge configuration. First and second magnetic shield elements are located over the first and second passive MTJ elements and form a gap therebetween that concentrates magnetic flux toward the first and second active MTJ elements. A three-dimensional coil is wound around the first and second magnetic shield elements with over-windings located over the first and second magnetic shield elements and under-windings located under the first and second magnetic shield elements, connected together by a plurality of vias adjacent the first and second magnetic shield elements.