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Daejeon, South Korea

Kim J.,NT Research division | Hyun Y.,NT Research division | Park Y.,NT Research division | Choi W.,NT Research division | And 5 more authors.
Journal of Nanoscience and Nanotechnology

A silicon nanowire one-dimensional thermoelectric device is presented as a solution to enhance thermoelectric performance. A top-down process is adopted for the definition of 50 nm silicon nanowires (SiNWs) and the fabrication of the nano-structured thermoelectric devices on silicon on insulator (SOI) wafer. To measure the Seebeck coefficients of 50 nm width n- and p-type SiNWs, a thermoelectric test structure, containing SiNWs, micro-heaters and temperature sensors is fabricated. Doping concentration is 1.0× 1020 cm-3 for both for n- and p-type SiNWs. To determine the temperature gradient, a temperature coefficient of resistance (TCR) analysis is done and the extracted TCR value is 1750-1800 PPM · K-1. The measured Seebeck coefficients are -127.583 μV · K-1 and 141.758 μV · K-1 for n- and p-type SiNWs, respectively, at room temperature. Consequently, power factor values are 1.46 mW · m -1 · K-2 and 1.66 mW · m-1 · K-2 for n- and p-type SiNWs, respectively. Our results indicate that SiNWs based thermoelectric devices have a great potential for applications in future energy conversion systems. © 2013 American Scientific Publishers. Source

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