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Dabrowska E.,nstytut Technologii Materialow Elektronicznych | Teodorczyk M.,nstytut Technologii Materialow Elektronicznych | Lipinska L.,nstytut Technologii Materialow Elektronicznych | Krzyzak K.,nstytut Technologii Materialow Elektronicznych | And 6 more authors.
Przeglad Elektrotechniczny | Year: 2015

 It has been shown that covering side walls of a laser diode’s chip with graphene oxide (GO) results in reduction of the laser diode's thermal resistance. Reduction of the temperature of the diode itself is also observed. In turn, additional covering the n-contact of the chip with GO results in the diode's temperature increase. On the other hand, alternative application of a chemical graphene layer in this place gives further temperature decrease. This can be explained by much higher emissivity of graphene layer compared to GO. The shifts of lasing spectral characteristics (in the 880 nm band) as well as changes in chip's deflection connected with GO and graphene applications are also shown. © 2015, Kluwer Academic Publishers. All Rights Reserved. Source

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