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Le Bourget-du-Lac, France

Song X.,University Pierre and Marie Curie | Song X.,STMicroelectronics | Michaud J.F.,University Pierre and Marie Curie | Cayrel F.,University Pierre and Marie Curie | And 5 more authors.
Applied Physics Letters | Year: 2010

In this paper, we demonstrate the high electrical activity of extended defects found in 3C-SiC heteroepitaxially grown layer on (100) silicon substrates. Cross-sectional scanning transmission electron microscopy analysis was performed to reveal the defects while scanning spreading resistance microscopy aimed to study their electrical behavior. Using this technique, complete layer resistance cartography was done. The electrical activity of the extended defects in 3C-SiC was clearly evidenced. Furthermore, the defect activity was estimated to be higher than that of heavily nitrogen doped (5× 1018 cm-3) 3C-SiC layer. © 2010 American Institute of Physics. Source


Ouerghi A.,CNRS Laboratory for Photonics and Nanostructures | Kahouli A.,CNRS Laboratory for Photonics and Nanostructures | Lucot D.,CNRS Laboratory for Photonics and Nanostructures | Portail M.,French National Center for Scientific Research | And 7 more authors.
Applied Physics Letters | Year: 2010

Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)/Si(111) substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples. © 2010 American Institute of Physics. Source


Michaud J.F.,University Pierre and Marie Curie | Portail M.,French National Center for Scientific Research | Chassagne T.,NOVASiC | Zielinski M.,NOVASiC | Alquier D.,University Pierre and Marie Curie
Microelectronic Engineering | Year: 2013

Among the different silicon carbide polytypes, 3C-SiC is very interesting for Micro-Electro-Mechanical-Systems (MEMS) applications. This interest could benefit from the development of multi stacked Si/SiC heterostructures as illustrated by the achievement of a continuous silicon monocrystalline thin film on 3C-SiC epilayers deposited on (1 0 0) silicon substrates. Based on this recent result, an original monocrystalline 3C-SiC/Si/3C-SiC/Si hetero-structure has been developed by Low Pressure Chemical Vapor Deposition with a two-step process. This kind of structure allows the selective etching of the silicon epilayer in order to define an original 3C-SiC micro-structure. By wet etching, the remaining silicon film, used as a sacrificial layer, can be then etched, resulting in a monocrystalline 3C-SiC membrane on a 3C-SiC pseudo-substrate. This new and original approach opens the field for future MEMS devices. © 2013 Elsevier B.V. All rights reserved. Source


Michon A.,French National Center for Scientific Research | Vzian S.,French National Center for Scientific Research | Ouerghi A.,CNRS Laboratory for Photonics and Nanostructures | Zielinski M.,NOVASiC | And 2 more authors.
Applied Physics Letters | Year: 2010

We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate. © 2010 American Institute of Physics. Source


Jiao S.,University Pierre and Marie Curie | Jiao S.,French National Center for Scientific Research | Michaud J.F.,University Pierre and Marie Curie | Portail M.,French National Center for Scientific Research | And 4 more authors.
Materials Letters | Year: 2012

The recent achievement of a continuous silicon monocrystalline thin film on 3C-SiC epilayers deposited on silicon substrates has opened the field for new microstructures. In this work, this original hetero-structure is the basis for the elaboration of an entire cantilever for atomic force microscopy. The hetero-epitaxially grown silicon layer is used to define the tip of the cantilever fabricated from the 3C-SiC epilayer deposited on silicon. The complete cantilever is elaborated by plasma etching using a nickel mask. The use of a full dry etching process is very promising as it is independent of the crystalline orientation of the silicon epilayer contrary to process based on wet etching solutions. Moreover, based on such hetero-structure, new MEMS devices can be considered. © 2012 Elsevier B.V. All rights reserved. Source

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