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Li P.,CAS Xinjiang Technical Institute of Physics and Chemistry | Li P.,University of Chinese Academy of Sciences | Guo H.-X.,CAS Xinjiang Technical Institute of Physics and Chemistry | Guo H.-X.,University of Chinese Academy of Sciences | And 6 more authors.
Chinese Physics Letters | Year: 2015

We present a study on the single event transient (SET) induced by a pulsed laser in different silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with the structure of local oxidation of silicon (LOCOS) and deep trench isolation (DTI). The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the collector-substrate (C/S) junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes. ©2015 Chinese Physical Society and IOP Publishing Ltd. Source


Jinxin Z.,CAS Xinjiang Technical Institute of Physics and Chemistry | Jinxin Z.,University of Chinese Academy of Sciences | Hongxia G.,CAS Xinjiang Technical Institute of Physics and Chemistry | Hongxia G.,Northwest Institution of Nuclear Technology | And 12 more authors.
Journal of Semiconductors | Year: 2014

This paper presents 3-D simulation of angled strike heavy-ion induced charge collection in domestic silicon-germanium heterojunction bipolar transistors (SiGe HBTs). 3D damaged model of SiGe HBTs single-event effects (SEE) is built by TCAD simulation tools to research ions angled strike dependence. We select several different strike angles at variously typical ions strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Charge collection induced by angled strike ions presents a complex situation. Whether the location of device ions enters, as long as ions track through the sensitive volume, it will cause vast charge collection. The amount of charge collection of SiGe HBT is not only related to length of ions track in sensitive volume, but also influenced by STI and distance between ions track and electrodes. The simulation model is useful to research the practical applications of SiGe HBTs in space, and provides a theoretical basis for the further radiation hardening.© 2014 Chinese Institute of Electronics. Source


Zhang J.-X.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zhang J.-X.,Xinjiang Key Laboratory of Electronic Information Materials and Devices | Zhang J.-X.,University of Chinese Academy of Sciences | Guo H.-X.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 18 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2013

In this paper, we establish a three-dimensional numerical simulation model for SiGe heterojunction bipolar transistor by the technology computer aided design simulations. In the simulation we investigate the charge collection mechanism by heavy ion radiation in SiGe HBT technology. The results show that the charge collected by the terminals is a strong function of the ion striking position. The sensitive area of charge collection for each terminal is identified based on the analyses of the device structure and simulation results. For a normal strike within and around the area of the collector/substrate junction, most of the electrons and holes are collected by the collector and substrate terminals, respectively. For an ion strike between the shallow trench edges surrounding the emitter, the base collects a large quantity of charge, while the emitter collects a negligible quantity of charge. © Chinese Physical Society. Source


Li P.,CAS Xinjiang Technical Institute of Physics and Chemistry | Li P.,University of Chinese Academy of Sciences | Guo H.-X.,CAS Xinjiang Technical Institute of Physics and Chemistry | Guo H.-X.,University of Chinese Academy of Sciences | And 10 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2015

With the rapid development of satellite, manned space flight and deep space exploration technology, semiconductor devices are used in extreme environments, especially in radiation and low temperature environment. SiGe HBT is a potential candidate for space applications because of its inherent robustness to total ionizing dose (TID) radiation. However, due primarily to charge collection through the collector-substrate (CS) junction and the relatively low substrate doping, SiGe HBTs are vulnerable to single event effects (SEEs) because of new features of process and structure. Thus, the SEE becomes a key factor in restricting space applications of SiGe HBTs. This paper presents an SEE hardening approach that uses a dummy collector to reduce charge collection in the SiGe HBT. The dummy collector is obtained by using the silicon space between adjacent HBTs. It is obtained without any process modification or area penalty. At first, we build simulation models for both normal and hardened SiGe HBTs, and then carry out SEE simulations respectively. The charge collection mechanism is obtained by analyzing the transient current and charge collection changes at different ion incident positions. Unlike the normal HBT, we can see that charge is continuously collected by the dummy CS junction. This causes more charges diffuse outward and the charges available for collector terminal to be reduced. For all ion incident positions, in the case of hardening, the drift components of charge collection are approximately the same, while the diffusion charge collection components are nearly completely compressed. During SEE, the CS junction either directly collects the deposited charges through drift within the potential funnel or indirectly collects charges after they have arrived at the junction after diffusion. The diffusion length of the carriers is on the order of tens of microns or more. Hence a dummy CS junction should be able to reduce the quantity of diffusive charges collected by the HBT collector. The actual charges collected by the collector are effectively reduced. The emitter and base charge collection also decrease by the dummy collector to different extents. Dummy-collector effectively mitigates the SEE of SiGe HBT. The SEE sensitive area of SiGe HBT is also effectively reduced by half. This work is carried out for the SiGe HBT circuit level radiation hardening design of single event effects ©, 2015, Chinese Physical Society. All right reserved. Source


Yang J.,Northwest Institution of Nuclear Technology | Sun B.,Northwest Institution of Nuclear Technology | Zhu Z.,Northwest Institution of Nuclear Technology | Shi Y.,Northwest Institution of Nuclear Technology
Proceedings - 7th Asia-Pacific Conference on Environmental Electromagnetics, CEEM 2015 | Year: 2015

The polarization and incident angle of the incident plane wave influence the electromagnetic shielding effectiveness (EMSE). By calculating the attenuated field of an infinite metal plate immediately from Maxwell's Equations or using the model of transmission line, EMSE versus the incident angle for different polarizations can be plotted. EMSE increases as the incident angle getting larger for perpendicular polarized incident wave and it decreases with the incident angle for parallel polarized incident wave. For frequently used shielding materials, the deviation between normal incidence and different polarized incident wave is approximately a constant for a given incident angle in the range of a widen frequency spectrum (1 Hz∼1 GHz). © 2015 IEEE. Source

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