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Beijing, China

North China University of Technology is a university in Shijingshan District, Western Beijing, People's Republic of China.North China University of Technology has 9 colleges, 30 majors, 12 teaching and experimental center, and 9 research and design institute. Wikipedia.


Li C.,North China University of Technology
Materials Letters | Year: 2014

This study reports a direct synthesis of AlN nanowires via the reaction of aluminum powder and nitrogen gas at around 800 C without catalyst. The as-prepared AlN nanowires were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The product consists of wurtzite AlN nanowires with diameter of tens of nanometer. The cathodoluminescence (CL) measurements show that the luminescence intensities of the as-prepared AlN nanowires are more than 5 times stronger than that of the commercial AlN powder, which is attributed to the nitrogen vacancies and oxygen-related defects in the nanowires. © 2013 Published by Elsevier B.V. Source


Zhang S.,North China University of Technology
Computers and Mathematics with Applications | Year: 2011

With respect to comprehensive evaluation model for computer network security with linguistic information and incomplete weight information, a new comprehensive evaluation model is proposed. In the method, the 2-tuple linguistic representation developed in recent years is used to aggregate the linguistic assessment information. In order to get the weight vector of the attribute, we establish an optimization model based on the basic ideal of traditional TOPSIS, by which the attribute weights can be determined. Then, the optimal alternative(s) is determined by calculating the shortest distance from the 2-tuple linguistic positive ideal solution (TLPIS) and on the other side the farthest distance of the 2-tuple linguistic negative ideal solution (TLNIS). The method has exact characteristics in linguistic information processing. It avoided information distortion and losing which occurred formerly in linguistic information processing. Finally, a numerical example of the evaluation of network security systems is used to illustrate the use of the proposed method. The result shows the approach is simple, effective and easy to calculate. © 2011 Elsevier Ltd. All rights reserved. Source


Zhang Z.-Y.,North China University of Technology
Journal of Physics A: Mathematical and Theoretical | Year: 2013

In this paper, approximate nonlinear self-adjointness for perturbed PDEs is introduced and its properties are studied. Consequently, approximate conservation laws which cannot be obtained by the approximate Noether theorem are constructed by means of the method. As an application, a class of perturbed nonlinear wave equations is considered to illustrate the effectiveness. © 2013 IOP Publishing Ltd. Source


Patent
North China University of Technology | Date: 2012-01-13

A temperature sensor, based on magnetic tunneling junction (MTJ) device, includes an MTJ device, a PMOS device and an analog switch. Source electrode of the PMOS device is connected to a power supply; drain electrode of the PMOS device is connected to an input terminal of the MTJ device and is connected to the voltage output terminal of the temperature sensor; an output terminal of the MTJ device is connected to a ground or a circuit via the analog switch; drain electrode of the PMOS device is short circuited with gate electrode of the PMOS device. A negative input terminal of an operational amplifier is connected to the voltage output terminal and a positive input terminal of the operational amplifier is connected to a reference voltage. The sensor is compatible with CMOS process and able to simultaneously perform functions such as temperature detection, over-temperature protection and over-current protection.


Patent
North China University of Technology | Date: 2011-12-30

A monolithically-integrated dual surge protective device and its fabrication method are disclosed. The exemplary dual surge protective device includes a LDMOS device and a diode assembly which is consisted. of multiple diodes series-wound on back-to-back basis and whose one end is connected to drain electrode of the LDMOS device and the other-end is connected to gate electrode of the LDMOS device. The diode assembly can be fabricated directly in the gate electrode area of the LDMOS device after fabrication of the LDMOS device is completed. The protective device is equivalent to combination of diodes and LDMOS in respect to operating principles and structures, with the advantage of enhanced effect of surge prevention and cost reduction of surge device as it can be integrated into a chip.

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