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Tucson, AZ, United States

Lai Y.-Y.,University of Arizona | Yarborough J.M.,University of Arizona | Kaneda Y.,University of Arizona | Hader J.,Nonlinear Control Strategies Inc. | And 5 more authors.
IEEE Photonics Technology Letters | Year: 2010

A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd:YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over 340 W was obtained. © 2006 IEEE. Source

Agency: Department of Defense | Branch: Air Force | Program: STTR | Phase: Phase II | Award Amount: 749.96K | Year: 2006

Semiconductor amplifiers and lasers are pervasive as critical components in modern day military and commercial technologies. High quality semiconductor wafer growth can now produce heterostructures of very high quality with stoichiometrically correct growth of individual mono-layers. Despite these significant advances in MBE and MOCVD growth technologies, a critical void remains in predicting the performance of final packaged functional amplifier or laser devices. The lack of predictive semiconductor device design and growth monitoring capability can be traced to the extreme complexity of calculating the semiconductor optical response from first principles. Parallel progress in basic research over the past decade has led to the emergence of the first fully predictive theory of the optical properties of semiconductor heterostructures. A Nonlinear Control Strategies /University of Arizona collaborative project proposes to develop robust commercial PC-based software tools built on such microscopically computed optical gain databases. Individual modules will aid in semiconductor epi design, growth monitoring and overall functional device optimization. Such closed-loop software tools applicable to a broad class of material systems, will enable the laser designer and materials grower to fast track from device design concept through growth to the final packaged device, thereby avoiding costly and wasteful material re-growth and packaging cycles

Hader J.,Nonlinear Control Strategies Inc. | Hader J.,University of Arizona | Moloney J.V.,Nonlinear Control Strategies Inc. | Moloney J.V.,University of Arizona | Koch S.W.,University of Marburg
Applied Physics Letters | Year: 2011

The temperature dependence of the measured internal efficiencies of green and blue emitting InGaN-based diodes is analyzed. With increasing temperature, a strongly decreasing strength of the loss mechanism responsible for droop is found which is in contrast to the usually assumed behavior of Auger losses. However, the experimental observations can be well reproduced assuming density activated defect recombination with a temperature independent recombination time. © 2011 American Institute of Physics. Source

Hader J.,Nonlinear Control Strategies Inc. | Hader J.,University of Arizona | Moloney J.V.,Nonlinear Control Strategies Inc. | Moloney J.V.,University of Arizona | Koch S.W.,University of Marburg
Applied Physics Letters | Year: 2014

Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers. © 2014 AIP Publishing LLC. Source

Heinen B.,University of Marburg | Wang T.-L.,University of Arizona | Sparenberg M.,University of Marburg | Weber A.,NAsP III V GmbH | And 6 more authors.
Electronics Letters | Year: 2012

A report is presented on an optically-pumped semiconductor disk laser providing a continuous-wave output power of 106W at a heatsink temperature of 3°C. The laser, which operates in the transversal multimode regime, emits at a wavelength of 1028nm. This high output power is achieved by carefully optimising the chip design, the growth process, and the bonding layer. © 2012 The Institution of Engineering and Technology. Source

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