Kono A.,Kanazawa Institute of Technology |
Yada K.,Kanazawa Institute of Technology |
Horibe H.,Kanazawa Institute of Technology |
Ota H.,Nomura Micro Science Co. |
Yanagi M.,Nomura Micro Science Co.
Kagaku Kogaku Ronbunshu | Year: 2010
Removal of negative-tone novolak chemical amplification resist by use of ethylene carbonate (EC) and propylene carbonate (PC) was investigated. Unlike positive-tone resist, the removal rate of negative-tone resist by these chemicals was found to be easily measurable. The removal rate of resist by both EC and PC decreased with increasing exposure dose because of the increasing degree of crosslinking of the resist. The removal rate by EC was faster than that by PC at the same temperature. EC more readily penetrates the exposed resist than PC because of its smaller molecular size. From Arrhenius plots of removal rate, we found that both high exposure dose and large molecular size of the chemicals lead to high activation energy in the resist removal reaction. © 2010 The Society of Chemical Engineers, Japan.
Nomura Micro Science Co., INC Research and HJS Engineering CO. | Date: 2016-07-14
A method of producing washing hydrogen water in an embodiment, includes: a step of storing ammonia water in a first tank; a step of transferring the ammonia water from the first tank to a second tank; a step of diluting the transferred ammonia water with ultrapure water in the second tank; a step of mixing the diluted ammonia water into hydrogen water; and a washing step of washing an inside of the first tank by ultrapure water to remove fine particles derived from ammonia generated in the first tank.
Tamada M.,Japan Atomic Energy Agency |
Ueki Y.,Japan Atomic Energy Agency |
Seko N.,Japan Atomic Energy Agency |
Takeda T.,Kurashiki Textile Manufacturing Co. |
Kawano S.-I.,Nomura Micro Science Co.
Radiation Physics and Chemistry | Year: 2012
High performance adsorbent is expected to be synthesized for the removal of Ni and Cu ions from strong alkaline solution used in the surface etching process of Si wafer. Fibrous adsorbent was synthesized by radiation-induce emulsion graft polymerization onto polyethylene nonwoven fabric and subsequent amination. The reaction condition was optimized using 30L reaction vessel and nonwoven fabric, 0.3m width and 18m long. The resulting fibrous adsorbent was evaluated by 48wt% NaOH and KOH contaminated with Ni and Cu ions, respectively. The concentration levels of Ni and Cu ions was reduced to less than 1μg/kg (ppb) at the flow rate of 10h -1 in space velocity. The life of adsorbent was 30 times higher than that of the commercialized resin. This novel adsorbent was commercialized as METOLATE ® since the ability of adsorption is remarkably higher than that of commercial resin used practically in Si wafer processing. © 2011 Elsevier Ltd.
Japan Atomic Energy Agency, Nomura Micro Science Co. and KURASHIKI TEXTILE MANUFACTURING Co. | Date: 2011-04-22
Filter media for liquid purification, which can remove metal compounds or metal ions containing in polishing or washing liquids such as alkali, acid solution or ultra-pure water used for silicon wafers of semiconductors. Removal of metals from various kind of liquid such as inorganic chemicals, organic solvent, or industrial waste water are also the subject of the present invention. The Filter media made of melt-blown nonwoven substrate comprising of aethylene/norbornene copolymer represented by the following formula  and/or a polycyclic norbornene polymer represented by the following formulae (a),(b),(c) as raw material, wherein said ethylene/norbornene copolymer and said polycyclic norbornene polymer have a glass transition temperature (Tg) selected in a range from 80 to 180 C. and melt volume rate (MVR) (ISO 1133, measuring conditions: 260 C., 2.16 kg) of 30 cm^(3)/10 min or more, and wherein said melt-blown nonwoven substrate is constituted of fibers having an average fiber diameter ranging from 1 to 30 m is applied. On such melt-blown nonwoven substrate, ion-exchangeable or chelate group is introduced through graft polymerization of vinyl monomer. [wherein ethylene unit (X) and norbornene unit (Y) is chosen from 1 to 99 mole %] [wherein m and n represent degree of polymerization and are chosen from 1 or more.]
Ota H.,Nomura Micro Science Co. |
Otsubo H.,Nomura Micro Science Co. |
Yanagi M.,Nomura Micro Science Co. |
Fujii H.,Kanagawa Industrial Technology Center |
Kamimoto Y.,Kanagawa Industrial Technology Center
IEICE Transactions on Electronics | Year: 2010
Recently, it is demanded to form a high performance pattern on an enlarged circuit board in a low cost in the process to produce LCD devices. In the part of upgrading the performance, the materials are reexamined such as Al or Mo to Cu. Furthermore, in the process of reexamining the materials, it is demanded that such materials are low in environmental load. Therefore, we examined if it is possible to reuse Ethylene Carbonate, a photo resist stripper, with low environmental load by decomposing dissolved photo resist using ozone gas. Furthermore, we examined if it is possible to apply Ethylene Carbonate without damaging the next generation wiring materials. As a result, we were able to identify the most efficient condition for ozone gas to recycle Ethylene Carbonate used as a photo resist stripper. Ethylene Carbonate was not only suitable for AlMo wiring, but was also suitable for the next generation Cu wiring. Therefore by using Ethylene Carbonate for the new and old process for stripping photo resists, it is able to reduce the environmental load and also reduce the cost for stripping. © 2010 The Institute of Electronics, Information and Communication Engineers.
Nomura Micro Science Co. | Date: 2013-08-21
There is provided an abrasive recovery device and an abrasive recovery method capable of recovering a slurry which is condensed until a concentration of its abrasive becomes high while suppressing an increase in pressure loss and a great decrease in a recovery ratio ascribable to membrane clogging. The abrasive recovery device is a device 1 which recovers an abrasive from a used polishing slurry which has been used in a CMP process, the device including a separation membrane 41 having a cylindrical hole passage to which the used polishing slurry is led, wherein an effective filtration part of the hole passage of the separation membrane 41 has a 0.8 m length or less, and the abrasive recovery device 1 condenses the used polishing slurry until a concentration of the abrasive becomes 10 mass % or more.
Yoshida C.,Nomura Micro Science Co. |
Nomura A.,Nomura Micro Science Co. |
Endou M.,Nomura Micro Science Co.
Bunseki Kagaku | Year: 2010
Ultrapure water is used in various areas such as pharmaceutical manufacturing, electric power generation, and the electronic industry. The types of noticeable impurities and required purity vary, too. Especially, purity for ultrapure water used in the semiconductor sector is so demanding as to be required to remove almost all impurities to the utmost limit. To evaluate the water quality of such ultrapure water, the sensitivity of online measuring equipment is not enough, and off-line analysis using more sensitive analysis equipment is necessary. Preconcentration techniques to increase the sensitivity and various contamination controls including from sampling to analysis are necessary in off-line analysis. Examples of measuring metal components and non-metal components in ultrapure water for semiconductor at the ng L-1 to pg L-1 level by using these water-quality evaluation techniques are introduced. © 2010 The Japan Society for Analytical Chemistry.