NLT Technologies Ltd.

Kawasaki, Japan

NLT Technologies Ltd.

Kawasaki, Japan

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Patent
NLT Technologies Ltd. | Date: 2016-11-14

Provided is an OLED display device preventing an occurrence of a crosstalk using a simple structure. A display device includes: a display unit that includes a plurality of pixel circuits each including an organic light emitting element; a control unit that applies electric potential to the pixel circuits for a first period, and that controls emission luminance of the organic light emitting elements for a second period after the first period; and an application unit that applies a voltage of less than or equal to a threshold voltage of the organic light emitting element before a start of the second period in which the organic light emitting element has internal capacitance to maintain an electric potential difference between the anode electrode and the cathode electrode for a vertical scanning period in which a displayed image to be refreshed when the control unit controls the organic light emitting element not to emit light.


Patent
Nlt Technologies Ltd. | Date: 2016-11-17

An electronic apparatus includes a sensor system, an excitation generating unit which generates an intermittent sine wave signal and applies the same to the sensor system, and a demodulation unit which demodulates an amplitude modulated signal which is an output of the sensor system, in which the demodulation unit generates a demodulated signal using both a response of the sensor system in a period when the excitation generating unit outputs a sine wave and a response of the sensor system in a period, at least either immediately before or immediately after the above-mentioned period, when the excitation generating unit does not output a sine wave.


Provided is an oxide semiconductor thin film transistor with low parasitic capacitance and high reliability. A thin film transistor includes a substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating film, and a gate electrode. The gate insulating film includes one layer or two layers, at least one of the layers of the gate insulating film is a patterned gate insulating film located at a position separated from the source electrode and the drain electrode. A length of a lower surface of the patterned gate insulating film in a channel length direction is greater than a length of a lower surface of the gate electrode in the channel length direction. The length of the lower surface of the patterned gate insulating film in the channel length direction is greater than a length of the channel region in the channel length direction. The source region and the drain region have a higher hydrogen concentration than the channel region.


Patent
NLT Technologies Ltd. | Date: 2016-10-24

A thin-film device includes a resin film which includes a first surface and a second surface facing the first surface, a first inorganic layer on the first surface, a thin-film element on the first inorganic layer, and a second inorganic layer on the second surface, wherein a film density of the second inorganic layer is greater than a film density of the first inorganic layer.


Patent
NLT Technologies Ltd. | Date: 2016-10-21

A protection circuit includes a control circuit that controls current between a first wiring and a second wiring and an application circuit that applies a voltage to the control circuit. The control circuit includes a first thin film transistor that controls the current. The application circuit includes second and third thin film transistors that are connected in series. Each of the second and third thin film transistors includes first and second gates. The first gate of the second thin film transistor is connected to the first wiring. The first gate of the third thin film transistor is connected to a connection point between the second and third thin film transistors. The second gates of the second thin film transistor and the third thin film transistor are connected to the second wiring. The application circuit applies a voltage of the connection point to a gate of the first thin film transistor.


There is provided a light control element including a transparent conductive film, a proton accumulation layer on the transparent conductive film, an inorganic electrolyte layer on the proton accumulation layer, an organic electrolyte layer on the inorganic electrolyte layer, a catalyst layer on the organic electrolyte layer, and a light control mirror layer on the catalyst layer.


Patent
NLT Technologies Ltd. | Date: 2017-04-18

With an image sensor in which the amplifier circuit is disposed at each pixel, there is such an issue that the threshold voltage of the transistor fluctuates so that the signal voltage fluctuates because a voltage is continuously applied between the source and the gate of the transistor at all times when using the amorphous thin film semiconductor as the transistor that constitutes an amplifier circuit. The gate-source potential of the TFT that constitutes the amplifier circuit is controlled so that the gate terminal voltage becomes smaller than the source terminal voltage in an integrating period where the pixels accumulate the signals, and controlled so that the gate terminal voltage becomes larger than the source terminal voltage in a readout period where the pixels output the signals.


Patent
NLT Technologies Ltd. | Date: 2016-06-22

Provided are an image sensor and a method of manufacturing method of manufacturing the image sensor. The image sensor includes a substrate, photoelectric transducers and switching elements formed in layers on the substrate in this order. Each of the photoelectric transducers includes a hydrogenated amorphous silicon layer. Each of the switching elements includes an amorphous oxide semiconductor layer. The image sensor further includes a blocking layer arranged between the hydrogenated amorphous silicon layers of the photoelectric transducers and the amorphous oxide semiconductor layers of the switching elements, where the blocking layer suppresses penetration of hydrogen separated from the hydrogenated amorphous silicon layers.


Patent
NLT Technologies Ltd. | Date: 2016-03-31

A display panel is attached to a front plate which is disposed at a front surface side of the display panel, with an intermediate member interposed therebetween. A chassis accommodates the display panel in a state in which an opening edge of the chassis comes into contact with the front plate and an inner side surface of the chassis comes into contact with a side surface of the intermediate member. The opening edge of the chassis comes into contact with the front plate to position the display panel and the chassis in the thickness direction of the display panel. The inner side surface of the chassis comes into contact with the side surface of the intermediate member to position the display panel and the chassis in a direction along a display surface of the display panel.


Patent
NLT Technologies Ltd. | Date: 2016-09-21

A display device has a data-holding circuit with a capacitance and a display portion with a plurality of pixel electrodes, formed on a first carrier substrate. In the display device, a second carrier substrate disposed opposite the first carrier substrate is placed above the display portion, but the opposing substrate is not present above the area in which the data-holding circuit is disposed. The parasitic capacitance of the data-holding circuit can thereby be reduced. Therefore, the capacitance in the data-holding circuit can be reduced and the area required can be reduced as well. The display data of all the pixels is sent serially to the liquid crystal module without high-speed transfer for each frame time interval, and size can be reduced because the controller IC and interface circuit are formed on the same substrate as the display device substrate.

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