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Patent
Nitta Haas Incorporated | Date: 2015-06-01

A polishing composition of the invention is a polishing composition which is suitable for polishing a metal film, which is so-called final polishing, and contains colloidal silica having an average particle size of 20 nm or more and less than 80 nm which is determined by particle size distribution measurement using a light scattering method as abrasive grains; and at least one selected from iodic acid and its salt as an oxidizing agent, with the balance of water. By containing such components, the polishing composition shows nonselectivity, while being sufficiently suppressed in dishing and erosion.


Patent
Nitta Haas Incorporated and Sumco Corporation | Date: 2014-12-04

Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 m/min can be achieved.


Patent
Nitta Haas Incorporated, Rohm and Haas Electronic Materials CMP Holdings Inc. | Date: 2013-09-27

A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.


A method of polishing a sapphire substrate is provided, comprising: providing a substrate having an exposed sapphire surface; providing a chemical mechanical polishing slurry, wherein the chemical mechanical polishing slurry comprises, as initial components: colloidal silica abrasive, wherein the colloidal silica abrasive has a negative surface charge; and, wherein the colloidal silica abrasive exhibits a multimodal particle size distribution with a first particle size maximum between 2 and 25 nm; and, a second particle size maximum between 75 and 200 nm; optionally, a biocide; optionally, a nonionic defoaming agent; and, optionally, a pH adjuster. A chemical mechanical polishing composition for polishing an exposed sapphire surface is also provided.


Patent
Nitta Haas Incorporated | Date: 2013-03-28

The polishing composition of the present invention is a polishing composition for polishing a tungsten-containing metal layer formed on an insulating layer, the polishing composition comprising: abrasive grains; one or more halogen acids selected from the group consisting of iodic acid, iodous acid, and hypoiodous acid; a strong acid; a hydrogen-ion-supplying agent; and water.


Patent
Nitta Haas Incorporated | Date: 2012-04-09

The invention relates to an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. When the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.


A polishing pad has structural parts embedded therein; sensors, a memory for storing detected information obtained by the sensors, and a communication unit driven by a power supply unit to communicate with outside in a non-contact manner. The polishing pad and a communication unit configured to communicate with the communication unit of the polishing pad in a non-contact manner constitute a polishing information management system. The polishing pad and a communication unit configured to transmit and receive the information to and from the communication unit of the polishing pad in a non-contact manner constitute a polishing apparatus.


Patent
Nitta Haas Incorporated | Date: 2015-02-04

The polishing composition of the present invention is a polishing composition for polishing a tungsten-containing metal layer formed on an insulating layer, the polishing composition comprising: abrasive grains; one or more halogen acids selected from the group consisting of iodic acid, iodous acid, and hypoiodous acid; a strong acid; a hydrogen-ion-supplying agent; and water.


Patent
Sumco Corporation and Nitta Haas Incorporated | Date: 2012-02-02

Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 m/min can be achieved.


Patent
Nitta Haas Incorporated | Date: 2013-11-19

A polishing composition of the present invention contains: a polyvinyl alcohol resin having a 1,2-diol structure in its side chain, the polyvinyl alcohol resin being a copolymer of a monomer represented by Formula (1) below and a vinyl ester monomer; an organic acid; and abrasive grains whose surfaces are chemically modified so as to have a minus zeta potential on the surfaces in a solution with a pH of 2.0 or more and to have no isoelectric point:

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