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Kurin S.,Nitride Crystals Ltd. | Antipov A.,Nitride Crystals Ltd. | Barash I.,Nitride Crystals Ltd. | Roenkov A.,Nitride Crystals Ltd. | And 10 more authors.
Physica Status Solidi (C) Current Topics in Solid State Physics | Year: 2014

In this paper, we report on growth of ultraviolet light-emitting diode (UV LED) heterostructures by hydride vapour phase epitaxy (HVPE) on sapphire substrates and results of the heterostructures characterization by X-ray diffractometry, scanning electron microscopy, photo- and electroluminescence, micro-photoluminescence, collected from the cleaved edges and the surface of the heterostructure with lateral resolution of about 1 μm. The heterostructures demonstrate efficient hole injection and low droop of the external quantum efficiency. Packaged 360 nm UV LED chips have wall-plug efficiency of 1-1.5%. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Menkovich E.A.,Saint Petersburg Electrotechnical University | Tarasov S.A.,Saint Petersburg Electrotechnical University | Lamkin I.A.,Saint Petersburg Electrotechnical University | Kurin S.Yu.,GaN Crystals Ltd. | And 5 more authors.
Journal of Physics: Conference Series | Year: 2013

In this paper we report on dependence of the temperature of active layers (ALs) of heterostructures of light-emitting diodes (LEDs) based on AlGaN (UV LEDs) and InGaN (blue LEDs) on various current values (up to 150 mA). It is shown that the heating of the heterostructures is directly related to the concentration of defects. UV LEDs are characterized by a higher temperature than blue LEDs, they also demonstrate a lower wall-plug efficiency (WPE) (about 1.5% at 20 mA). The WPE of blue LEDs with and without the superlattice are 15% and 18%, respectively. To verify the accuracy of the performed measurements the theoretical calculation of the AL temperature according to Van Roosbroeck-Shockley theory and the model of 2D-combined density of states is carried out. © Published under licence by IOP Publishing Ltd. Source


Solomonov A.V.,St Petersburg Electrotechnical University Leti | Tarasov S.A.,St Petersburg Electrotechnical University Leti | Men'kovich E.A.,St Petersburg Electrotechnical University Leti | Lamkin I.A.,St Petersburg Electrotechnical University Leti | And 6 more authors.
Semiconductors | Year: 2014

The results of work on developing and studying ultraviolet (UV) light-emitting diodes (LEDs) based on GaN/AlGaN heterostructures fabricated on Al2O3(0001) substrates by the chloride-hydride vaporphase epitaxy are presented. The maximum in the electroluminescence spectrum is located in the wavelength range of 360-365 nm, and its full width at half maximum is 10-13 nm. At a working current of 20 mA, the optical density and efficiency of the UV LED are 1.14 mW and 1.46%, respectively. © 2014 Pleiades Publishing, Ltd. Source


Mokhov E.,RAS Ioffe Physical - Technical Institute | Izmaylova I.,RAS Ioffe Physical - Technical Institute | Kazarova O.,RAS Ioffe Physical - Technical Institute | Wolfson A.,RAS Ioffe Physical - Technical Institute | And 6 more authors.
Physica Status Solidi (C) Current Topics in Solid State Physics | Year: 2013

The features of 2" AlN bulk crystal growth by the sublimation sandwich method (SSM) on SiC seeds in a graphite-heated reactor are investigated. AlN growth conditions and crystal properties are compared with the results of SiC sublimation growth in the same reactor. The specifics of AlN sublimation growth, including insufficient reproducibility of results, are believed to be caused by the low sticking coefficient of molecular nitrogen and the high reactivity of Al vapors. The formation of pores in the AlN crystal is explained by selective sublimation etching of the growing surface. The negative effect of non-optimal growth conditions and impurities on AlN crystal quality is discussed. The analysis of container materials, inert to Al vapors was carried out. Various types of TaC crucibles suitable for growth of bulk AlN crystals on SiC seeds were developed. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Kurin S.,Nitride Crystals Ltd. | Antipov A.,Nitride Crystals Ltd. | Barash I.,Nitride Crystals Ltd. | Roenkov A.,Nitride Crystals Ltd. | And 5 more authors.
Physica Status Solidi (C) Current Topics in Solid State Physics | Year: 2013

In this paper, we present results on development of ultraviolet light-emitting diodes (UV LEDs) based on GaN/AlGaN heterostructures grown on Al2O3 (0001) substrates by chloride-hydride vapour phase epitaxy (CHVPE). Both packaged and unpackaged UV LED dies were fabricated. The peak wavelengths of dies were in the range of 360-365 nm with a typical FWHM of 10-13 nm. UV LEDs proved performance capability at current density up to 125 A/cm2. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source

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