Irmo, SC, United States
Irmo, SC, United States

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Liquid Phase Catalytic Exchange (LPCE) is a key technology used in water detritiation systems. Rigorous simulation of LPCE is complicated when a column may have both hydrogen and deuterium present in significant concentrations in different sections of the column. This paper presents a general mass transfer model for a homogenous packed bed LPCE column as a set of differential equations describing composition change, and equilibrium equations to define the mass transfer driving force within the column. The model is used to analyze Combined Electrolysis and Catalytic Exchange (CECE) sensitivity to deuterium accumulation in the electrolyser.


Patent
Nitek Inc | Date: 2012-02-23

An improved process for forming a UV emitting diode is described. The process includes providing a substrate. A super-lattice is formed directly on the substrate at a temperature of at least 800 to no more than 1,300 C. wherein the super-lattice comprises Al_(x)In_(y)Ga_(1-x-y)N wherein 0


Patent
Nitek Inc | Date: 2015-05-18

A template for a semiconductor device is made by providing an AGN substrate, growing a first layer of Group III nitrides on the substrate, depositing a thin metal layer on the first layer, annealing the metal such as gold so that it agglomerates to form a pattern of islands on the first layer; transferring the pattern into the first layer by etching then removing excess metal; and then depositing a second Group III nitride layer on the first layer. The second layer, through lateral overgrowth, coalesces over the gaps in the island pattern leaving a smooth surface with low defect density. A Group III semiconductor device may then be grown on the template, which may then be removed. Chlorine gas may be used for etching the pattern in the first layer and the remaining gold removed with aqua regia.


Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase II | Award Amount: 999.97K | Year: 2011

The goal of the Phase II program is to fabricate high voltage high power converter/inverters for high frequency/high temperature operation using enhancement mode-depletion mode insulating ate AlInN-GaN/i-SiC transistor building blocks. Our technical approach is to use lattice matched AlInN-GaN epilayers in conjunction with a field-plated insulating gate HEMT device design and a fluorine treatment to accomplish the goal. We believe that the combination of lattice matched AlInN field-plated HEMTs, a unique pulsed PECVD insulator deposition and the use of a controlled fluorine treatment should overcome the issues currently faced by the AlGaN-GaN based technology. The suitability of our devices for military and commercial applications will be established via a joint processing and device testing program. In the Phase III program we will develop a large volume manufacturing technology for epitaxial wafers and devices for supply to DOD and commercial outfits in a strategic partnership with a large company.


Grant
Agency: National Science Foundation | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 149.99K | Year: 2011

This Small Business Innovation Research (SBIR) Phase I project will result in developing novel high-power, high-efficiency Deep Ultraviolet Light Emitting Diode (DUV LED) Lamps based on an innovative and new micro-pixel device design. Deep ultraviolet light sources with emission wavelengths lambda from 250 - 365 nm are used in many applications including water/air purification, analytical scientific instrumentation, bio-agent detection systems and emerging miniaturized bio-medical instrumentation. Aluminum-indium-gallium-nitride (AlInGaN) based DUVLEDs have recently been developed and commercialized. However at present their external quantum efficiency and output powers are only 1-2% and 1-2 mW in continuous operating mode. One of the primary causes of these low numbers is current crowding arising from the resistance of the n-AlGaN buffer layers. To address this challenge large area LEDs with micro-pixel device geometry with expected output powers of 15-20mW and a stable operation with lifetime over 3000 hours are being developed. New approaches are being developed for the n-AlGaN buffer layers and the active layers deposition to increase their thickness, avoid cracking, and reduce their resistance and defects. The broader impact/commercial potential of this project represents a new opportunity for developing semiconductor materials based solid-state deep ultraviolet light sources. The targeted performance will allow for penetration into large existing UV market segments such as water purification, medical instrumentation and UV polymer curing. The deep ultraviolet optoelectronic field continues to grow each year and the expertise gained through this program will contribute to the advancement of novel DUV light sources. The project will also lead to jobs for graduates from local Universities and Technical Institutes thereby fostering high-tech economic development in the state of South Carolina. Moreover the project will significantly enhance the knowledge base in high-aluminum content AlInGaN materials science, their epitaxial deposition and processing and packaging. There is a very high probability of transitioning the knowledge base and the developed technology to commercial products for disinfection/purification and polymer curing markets.


Grant
Agency: Department of Defense | Branch: Army | Program: SBIR | Phase: Phase II | Award Amount: 729.98K | Year: 2010

This SBIR Phase II project will result in Nitek Inc. commercializing high power, large area, UVC-LED Lamps based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep UVC-LEDs (ë


Trademark
Nitek Inc | Date: 2012-12-04

Light emitting diodes (LEDs).


Patent
Nitek Inc | Date: 2010-12-01

Object of the invention is a cryoprobe for cryosurgery, characterised in that it is equipped with a movable longitudinal element (1), the element being located in one plane with the cryoprobe cryohead (2) and forms with it a system of forceps.


Patent
Nitek Inc | Date: 2011-09-07

A vertical geometry light emitting diode with a strain relieved superlattice layer on a substrate comprising doped Al_(X)In_(Y)Ga_(1-X-Y)N. A first doped layer is on the strain relieved superlattice layer Al_(X)In_(Y)Ga_(1-X-Y)N and the first doped layer has a first conductivity. A multilayer quantum well is on the first doped layer comprising alternating layers quantum wells and barrier layers. The multilayer quantum well terminates with a barrier layer on each side thereof. A second doped layer is on the quantum well wherein the second doped layer comprises Al_(X)In_(Y)Ga_(1-X-Y)N and said second doped layer has a different conductivity than said first doped layer. A contact layer is on the third doped layer and the contact layer has a different conductivity than the third doped layer. A metallic contact is in a vertical geometry orientation.


Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a frequency corresponding to that of the alternating current. The illuminator includes a template with ultraviolet light emitting quantum wells, a first buffer layer with a first type of conductivity and a second buffer layer with a second type of conductivity, all deposited preferably over strain-relieving layer. A first and second metal contact are applied to the semiconductor layers having the first and second type of conductivity, respectively, to complete the LED. The emission spectrum ranges from 190 nm to 369 nm. The illuminator may be configured in various materials, geometries, sizes and designs.

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