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Mahanta J.,NIT SilcharAssam | Das P.K.,NERISTArunachal Pradesh
Advances in Intelligent Systems and Computing | Year: 2015

In spatial data modeling, the topological notion “continuous function” can link the spatial data with the modeled real world. In this article, we study fuzzy weakly continuous function and fuzzy weakly irresolute functions from set theoretic point of view. These generalizations of continuous functions in fuzzy setting will bring new practically relevant models in image processing. © Springer India 2015. Source

Lochan K.,NIT SilcharAssam | Roy B.K.,NIT SilcharAssam
Advances in Intelligent Systems and Computing | Year: 2015

This paper reviews the literature on control of 2-DOF robot manipulator using fuzzy logic control (FLC). Different schemes of FLC laws are considered here. These are PID control, sliding mode control (SMC), and adaptive control. Importance of each control techniques with its advantages and disadvantages is discussed here. It is highlighted that the robustness of the system has improved considerably by using FLC than classical controller. A total of 65 papers were surveyed in this research area, covering contribution on each control technique for the 2-DOF robot manipulator for the time span of 1983–2014. © Springer India 2015. Source

Sinha S.K.,NIT SilcharAssam | Chaudhury S.,NIT SilcharAssam
Journal of Nano Research | Year: 2016

In this paper, we have analyzed the effect of chiral vector, temperature, metal work function, channel length and High-K dielectric on threshold voltage of CNTFET devices. We have also compared the effect of oxide thickness on gate capacitance and justified the advantage a CNTFET provides over MOSFET in nanometer regime. Simulation on HSPICE tool shows that high threshold voltage can be achieved at low chiral vector pair in CNTFET. It is also observed that the temperature has a negligible effect on threshold voltage of CNTFET. After that we have simulated and observed the effect of channel length variation on threshold voltage of CNTFET as well as MOSFET devices and given a theoretical analysis on it. We found an unusual, yet, favorable characteristics that the threshold voltage increases with decreasing channel length in CNTFET devices in deep nanometer regime. ©(2016) Trans Tech Publications, Switzerland. Source

Das K.N.,NIT SilcharAssam | Parouha R.P.,NIT SilcharAssam
Advances in Intelligent Systems and Computing | Year: 2014

A novel hybrid swarm intelligent algorithm of DE and PSO is proposed in this paper based on a tri-breakup concept in the population. The algorithm thus design is named as DE-PSO-DE, shortly DPD algorithm. By this proposed mechanism, all individuals in the population are portioned into three group’s namely inferior, mid and superior group, based on their fitness values. DE is employed to the inferior and superior group whereas; PSO is used in the mid group. Initially the suitable mutation operators for both DEs (used in DPD) are investigated. Later, top 4 DPDs (Viz. DPDs those use best 4 combinations of mutation strategies in DE) are chosen for further study. DPD combines the global search ability of DE and the local search ability of PSO. The process of hybridization offsets the weaknesses of each other. In addition, two strategies namely Elitism and Non-redundant search have been incorporated in DPD cycle. The supremacy of DPD is realized over a set of typical unconstrained benchmark suite problems. Lastly, all top 4 DPDs are used in solving three real life problems. The numerical and graphical results confirm that the proposed DPD yields more accurate values with faster convergence rate. Finally, a particular DPD is recommended as the best amongst all DPDs to solve unconstrained global optimization problems. © Springer India 2014. Source

Chander S.,NIT SilcharAssam | Bhowmick B.,NIT SilcharAssam | Baishya S.,NIT SilcharAssam
Superlattices and Microstructures | Year: 2015

Abstract In this work, a hetero-junction fully depleted (FD) Silicon-on-Insulator (SOI) Tunnel Field Effect Transistor (TFET) nanostructure with oxide overlap on the Germanium-source region is proposed. Investigations using Synopsys Technology Computer Aided Design (TCAD) simulation tools reveal that the simple oxide overlap on the Germanium-source region increases the tunneling area as well as the tunneling current without degrading the band-to-band tunneling (BTBT) and improves the device performance. More importantly, the improvement is independent of gate overlap. Simulation study shows improvement in ON current, subthreshold swing (SS), OFF current, ION/IOFF ration, threshold voltage and transconductance. The proposed device with hafnium oxide (HfO2)/Aluminium Nitride (AlN) stack dielectric material offers an average subthreshold swing of 22 mV/decade and high ION/IOFF ratio (∼1010) at VDS = 0.4 V. Compared to conventional TFET, the Miller capacitance of the device shows the enhanced performance. The impact of the drain voltage variation on different parameters such as threshold voltage, subthreshold swing, transconductance, and ION/IOFF ration are also found to be satisfactory. From fabrication point of view also it is easy to utilize the existing CMOS process flows to fabricate the proposed device. © 2015 Elsevier Ltd. Source

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