Kyoto, Japan
Kyoto, Japan
SEARCH FILTERS
Time filter
Source Type

Patent
Nissin Ion Equipment | Date: 2013-03-15

In some aspects, an ion implantation system is disclosed that includes an ion source for generating a ribbon ion beam and at least one corrector device for adjusting the current density of the ribbon ion beam along its longitudinal dimension to ensure that the current density profile exhibits a desired uniformity. The ion implantation system can further include other components, such as an analyzer magnet, and electrostatic bend and focusing lenses, to shape and steer the ion beam to an end station for impingement on a substrate. In some embodiments, the present teachings allows the generation of a nominally one-dimensional ribbon beam with a longitudinal size greater than the diameter of a substrate in which ions are implanted with a high degree of longitudinal profile uniformity.


Patent
Nissin Ion Equipment | Date: 2015-01-14

An ion irradiation apparatus is provided. The ion irradiation apparatus includes a support member, a measuring device, and a control device. The support member is larger than the substrate. The measuring device is disposed forwardly in a traveling direction of an ion beam. The ion irradiation apparatus operates in a first mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam; and a second mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam. The control device controls the substrate so that the ion treatment process is performed in the first mode at least one time during the treatment.


Patent
Nissin Ion Equipment | Date: 2013-09-17

A plasma generator generates a plasma by ionizing a gas with a high-frequency discharge in a plasma generating chamber so that electrons from the plasma are emitted outside the plasma generator through an electron emitting hole. The plasma generator includes an antenna that is provided in the plasma generating chamber and that emits a high-frequency wave, and an antenna cover that is made of an insulating material and that covers an entire body of the antenna. A plasma electrode having the electron emitting hole is made of a conductive material. A frame cover with a protrusion ensures conductivity by preventing an insulating material from accumulating on a surface of the plasma electrode on a plasma side in sputtering by the plasma.


Patent
Nissin Ion Equipment | Date: 2015-05-27

A magnetic system for uniformly scanning an ion beam across a semiconductor wafer comprises a magnetic scanner having ac and dc coil windings each of which extend linearly along internal pole faces of a magnetic core. The ac and dc coil windings are mutually orthogonal; a time dependent magnetic component causes ion beam scanning whilst a substantially static (dc) field component allows the ion beam to be bent in an orthogonal plane. The current density in the ac and dc coil windings is uniformly dispersed along the pole faces leading to an improved beam spot uniformity at the wafer. The magnetic system also includes a collimator having first and second mutually opposed symmetrical dipoles defining an aperture between them. The poles of each dipole have a pole face varying monotonically and polynomially in a direction perpendicular to a central axis of the collimator: an increasing pole gap is formed towards that central axis.


Patent
Nissin Ion Equipment | Date: 2014-03-20

An electrostatic chuck system comprising a chuck body 1 having a clamping face 4 for electrostatically clamping a substrate 5, an electrode portion 2 generating a clamping force on the clamping face 4, a temperature-regulating portion 3 regulating the temperature of the substrate 5 to maintain it at a predetermined level, and a controller 10 controlling the voltage applied to the electrode portion 2, wherein, prior to completion of the electrostatic clamping of the substrate 5 to the chuck body 1, a voltage waveform obtained by superimposing a first waveform, which changes in a stepwise, rectilinear, or quadratic manner between a first level and a second level having a larger absolute value than the first level, and a periodic second waveform, which may be any of a rectangular wave, a triangular wave, a saw-tooth wave, or a sine wave, is applied by the controller 10 to the electrode portion 2.


A transport system is a vacuum processing system that includes a transport device that is provided in a vacuum, and a lubricating agent supply device that supplies lubricating agent to the transport device and provided in the ambient atmosphere. The transport device has a lubricating agent flow channel that is a channel for grease injected to a site subject to lubrication. The lubricating agent supply device has a grease server that stores a lubricating agent in the ambient atmosphere, a lubricating agent supply pipe which is a channel that guides the grease stored in the grease server to the lubricating agent flow channel and that connects the grease server and the lubricating agent flow channel, and an exhaust pump that exhausts the inside of the lubricating agent supply pipe.


Patent
Nissin Ion Equipment | Date: 2015-10-06

A mass analyzing electromagnet is provided. The mass analyzing electromagnet includes an analysis tube having an internal zone formed as a passage for the ion beam; and


Patent
Nissin Ion Equipment | Date: 2015-08-20

In one aspect, an ion implantation system is disclosed, which comprises a deceleration system configured to receive an ion beam and decelerate the ion beam at a deceleration ratio of at least 2, and an electrostatic bend disposed downstream of the deceleration system for causing a deflection of the ion beam. The electrostatic bend includes three tandem electrode pairs for receiving the decelerated beam, where each electrode pair has an inner and an outer electrode spaced apart to allow passage of the ion beam therethrough. Each of the electrodes of the end electrode pair is held at an electric potential less than an electric potential at which any of the electrodes of the middle electrode pair is held and the electrodes of the first electrode pair are held at a lower electric potential relative to the electrodes of the middle electrode pair.


A substrate holding device is provided with an electrostatic chuck that has an electrode therein and is provided with a substrate holding surface, on one side of which a substrate is held; a displacement gauge that is disposed above or below the substrate holding surface; and a controller which, along with using the displacement gauge to measure a first distance to the substrate when a substrate is placed on the substrate holding surface, uses the displacement gauge to measure a second distance to the substrate after a predetermined voltage is applied to the electrode of the electrostatic chuck and, based on the difference between the measured distances, ascertains whether the clamping of the substrate to the electrostatic chuck has been performed in a normal manner.


Patent
Nissin Ion Equipment | Date: 2015-12-07

A plasma generator for an ion implanter is provided. The plasma generator includes an ionization chamber for forming a plasma that is adapted to generate a plurality of ions and a plurality of electrons. An interior surface of the ionization chamber is exposed to the plasma and constructed from a first non-metallic material. The plasma generator also includes a thermionic emitter including at least one surface exposed to the plasma. The thermionic emitter is constructed from a second non-metallic material. The plasma generator further includes an exit aperture for extracting at least one of the plurality of ions or the plurality of electrons from the ionization chamber to form at least one of an ion beam or an electron flux. The ion beam or the electron flux comprises substantially no metal. The first and second non-metallic materials can be the same or different from each other.

Loading Nissin Ion Equipment collaborators
Loading Nissin Ion Equipment collaborators