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Wan Q.-F.,Ningxia Oriental Tantalum Industry Co Ltd | Tian M.,Ningxia Oriental Tantalum Industry Co Ltd | Chen L.,Ningxia Oriental Tantalum Industry Co Ltd | Zhao B.,Ningxia Oriental Tantalum Industry Co Ltd | Ma Y.-Z.,Ningxia Oriental Tantalum Industry Co Ltd
Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment | Year: 2013

Effects of doping Ge and Ce and annealing treatment at different temperatures on microstructure and properties of tantalum wire were investigated by means of observation of microstructure and testing of bending fracture of tantalum wire after sintering and sintering the tantalum wire pressed into tantalum powder containing oxygen. The results show that the recrystallization temperature of tantalum wire increases and the grains are refined with the increase of amount of doping Ge or Ce. It is found that, the effect of doping Ce on the refinement of the grains is more obvious than that of doping Ge. The bending times to fracture of tantalum wire after sintering increase with increase amount of doping Ge or Ce. Under the same condition, the bending resistance to frature of the tantalum wire after pressing into tantalum powder and sintering worsens with the increase of oxygen contents of the tantalum powder, and the bending resistance of tantalum wire doped with Ge and Ce is better than that of tantalum wire doped Ge, while that of tantalum wire doped with Ge is better than that of pure one when oxygen contents in the tantalum powder is mild(≥ 1500(10 -6)).


Wan Q.,Ningxia Oriental Tantalum Industry Co. | Tian M.,Ningxia Oriental Tantalum Industry Co. | Chen L.,Ningxia Oriental Tantalum Industry Co. | Zhao B.,Ningxia Oriental Tantalum Industry Co.
Journal Wuhan University of Technology, Materials Science Edition | Year: 2014

Effect of different dopants and various dopants quantity at different annealing temperatures on microstructure of tantalum wire, bending of tantalum wire after sintering and bending after pressing into tantalum powder and sintering were investigated through observation of microstructure and testing of bending of tantalum wire after sintering and bending after pressing into tantalum powder and sintering. The results show that the recrystallization temperature of tantalum wire increases and the grain of microstructure can be reduced with the increase of dopants quantity. At the same time, the effect of dopant Ce on reduction of the grain is more obvious than that of dopant Ge. The bending time of tantalum wire after sintering increases with the increase of dopant Ge or Ce quantity. Under the same condition, the bending time of tantalum wire after pressing into tantalum powder and sintering worsens with the increase of oxygen content in tantalum powder. The bending time of tantalum wire doped with Ge and Ce after pressing into tantalum powder and sintering is better than that of tantalum wire doped with Ge, while that of tantalum wire doped with Ge is better than that of pure one when oxygen content in tantalum powder is not too high. © 2014 Wuhan University of Technology and Springer-Verlag Berlin Heidelberg.


Zhang X.,Ningxia Oriental Tantalum Industry Co. | Zhang X.,Northwestern Polytechnical University | Wan Q.,Ningxia Oriental Tantalum Industry Co. | Xie Y.,Ningxia Oriental Tantalum Industry Co. | And 3 more authors.
Cailiao Kexue yu Gongyi/Material Science and Technology | Year: 2015

To solve the technical problems of tantalum strip welding during continuous production, the welding experiments of rolled 4 mm×4 mm tantalum strips were conducted using capacitor discharge preheating flash butt welding under inert gas protection. Using optical microscopy, scanning electron microscope and mechanical properties testing equipment, the microstructure, grains and grain boundary compositions, hardness and tensile strength of the welding zones(including heat-affected zone)under different forging forces were tested. The bonding of large-sized tantalum butts can be achieved using appropriate flash butt welding process, with dense welding microstructure and high bonding strength. It helps tothe development ofendless rolling and continuous drawing of large-sized tantalum strips. ©, 2015, Harbin Institute of Technology. All right reserved.


Wan Q.-F.,Central South University | Wan Q.-F.,Ningxia Oriental Tantalum Industry Co. | Wang D.-Z.,Central South University | Tian M.,Ningxia Oriental Tantalum Industry Co. | And 2 more authors.
Cailiao Kexue yu Gongyi/Material Science and Technology | Year: 2010

Relationship between doping with microstructure and property of tantalum bar and wire is carefully investigated through observation of microstructure, SEM fractograph, analysis of electric probing, testing of density, observation of TEM and testing of mechanical property at room temperature. It is illustrated that the grain of tantalum bar microstructure after sintering reduces with the increment of dopant quantity, and the effect of dopant B on reduction of the grain is more obvious than that of dopant A, even that sintering is becoming insufficient and the density of tantalum bar tends to be low with the increment of dopant B. The recrystallization temperature of tantalum wire increases and the grain of texture can be reduced with the increment of dopants quantity. At the same time, the effect of dopant B on reduction of the grain is more obvious than that of dopant A. The tensile of tantalum wire at room temperature increases with the increment of dopants quantity, while its elongation is lowered with the increment of dopant A quantity and rises with the increment of dopant B quantity. And the strengthening effect of dopant B is more obvious than that of dopant A. Additionally, dopant B plays an important role in fine grained toughening.

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