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Patent
Ningxia Orient Tantalum Industry Co. | Date: 2011-03-23

A method for passivating tantalum metal surface is provided, the method comprises cooling tantalum metal to or below 32 C. and/or passivating tantalum metal surface by oxygen-containing gas with a temperature of 0 C. or below. Also provided is an apparatus for passivating tantalum metal surface for applying the method, comprising a heat treatment furnace, an argon forced-cooling device and/or a device for cooling oxygen-containing gas.


Patent
Ningxia Orient Tantalum Industry Co. | Date: 2013-08-16

A method for preparing a high-performance tantalum target, a high-performance target prepared by the method, and a use of the high-performance target. The method for preparing the high-performance tantalum target comprises: firstly, preparing a tantalum ingot into a forging blank by a method of cold forging in conjunction with hot forging; then, rolling the forging blank by a hot rolling method; and finally, performing leveling, and performing discharging, milling and surface treatment according to a size of a finished product, so as to obtain the tantalum target. The tantalum target prepared by the method has uniform crystallization, with a grain size between 50 m and 120 m. A texture component where a texture (110) dominants in the thickness direction of the target is obtained. A total proportion of three textures (111), (110) and (100) is between 40% and 50%, ensuring a consistent sputtering rate of the tantalum target during use.


Patent
Ningxia Orient Tantalum Industry Co. and National Engineering Research Center For Special Metal Materials Of Tantalum And Niobium | Date: 2013-12-10

A method for preparing a tantalum power of capacitor grade, comprising: solid tantalum nitride is added when potassium fluotantalate is reduced by sodium. The method increases the nitrogen content in the tantalum powder, and at the same time improves the electrical performance of the tantalum powder. The specific capacitance is increased, and the leakage current and loss is improved. The qualification rate of the anode and the capacitor product is also improved. The method is characterized in that the nitrogen in the tantalum nitride diffuses between the particles of the tantalum powder, with substantially no loss, and thus the nitrogen content is accurate and controllable.


Patent
Ningxia Orient Tantalum Industry Co. | Date: 2015-10-13

The present invention relates to a tantalum wire for anode lead of tantalum capacitors, characterized in that the cross section of the tantalum wire is approximate rectangular or regular rectangular. The present invention also relates to a process for manufacturing the tantalum wire, comprising the steps of: providing feedstock tantalum wire; subjecting the feedstock tantalum wire to heat treatment; subjecting the heat treated tantalum wire to surface pretreatment to form an oxide membrane on the surface-pretreated tantalum wire; rolling the surface-pretreated tantalum wire by lubricating with lubricant oil to make the cross section of the rolled tantalum wire being approximate rectangular or regular rectangular; subjecting the tantalum wire to final annealing.


Patent
Ningxia Orient Tantalum Industry Co. | Date: 2014-01-16

The present invention relates to a base material for high temperature alloy and a process for manufacturing the same. The base material includes following components (by weight): 10-45% Cr, 0.5-12% Nb, 0.7-2.5% Ti, 9.0% Mo, 8.0% W, 2% Mn, 1.0% Si, 2.0% Al, 0.5% C, 0.032% O, 0.032% N,0.01% S, 0.02% P, and balance being Fe and unavoidable impurities. The process for manufacturing the base material for high temperature alloy includes following steps: providing raw materials according to the target composition; charging the raw materials in a crucible uniformly layer and layer according to a certain sequence, smelting in vacuum condition; after the materials being melted completely, holding the melt at a temperature; and casting ingot, and cooling to obtain a base material for high temperature alloy.

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