NIHON KESSHO KOGAKU Co.

Tatebayashi Gunma, Japan

NIHON KESSHO KOGAKU Co.

Tatebayashi Gunma, Japan

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Patent
Nihon Kessho Kogaku Co. | Date: 2016-03-18

Provided is a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and thallium (Tl) and bismuth (Bi), and a novel scintillator which maintains a high output and simultaneously can further enhance the afterglow characteristics. There is proposed a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and Tl, Bi and O, wherein the concentration a of Bi with respect to Cs in the crystal is 0.001 atomic ppma5 atomic ppm; and the ratio (a/b) of the concentration a of Bi with respect to Cs in the crystal to the concentration b of O with respect to I in the crystal is 0.00510^(4 )to 20010^(4).


Totsuka D.,Tohoku University | Totsuka D.,Nihon Kessho Kogaku Co. | Yanagida T.,NICHE | Fukuda K.,Tokuyama Corporation | And 6 more authors.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | Year: 2011

Thermal neutron imaging using Si PIN photodiode line scanner and Eu-doped LiCaAlF6 crystal scintillator has been developed. The pixel dimensions of photodiode are 1.18 mm (width)×3.8 mm (length) with 0.4 mm gap and the module has 192 channels in linear array. The emission peaks of Eu-doped LiCaAlF6 after thermal neutron excitation are placed at 370 and 590 nm, and the corresponding photon sensitivities of photodiode are 0.04 and 0.34 A/W, respectively. Polished scintillator blocks with a size of 1.18 mm (width)×3.8 mm (length)×5.0 mm (thickness) were wrapped by several layers of Teflon tapes as a reflector and optically coupled to the photodiodes by silicone grease. JRR-3 MUSASI beam line emitting 13.5 meV thermal neutrons with the flux of 8×105 n/cm2+ s was used for the imaging test. As a subject for imaging, a Cd plate was moved at the speed of 50 mm/s perpendicular to the thermal neutron beam. Analog integration time was set to be 416.6 μs, then signals were converted by a deltasigma A/D converter. After the image processing, we successfully obtained moving Cd plate image under thermal neutron irradiation using PIN photodiode line scanner coupled with Eu-doped LiCaAlF6 scintillator. © 2011 Elsevier B.V. All rights reserved.


Patent
Nihon Kessho Kogaku Co. and Tohoku University | Date: 2012-08-17

An afterglow property of cesium iodide: thallium (CsI:Tl), in which CsI is a host material and doped with thallium, is improved. It is possible to improve the afterglow property of a scintillator by doping a crystal material including CsI (cesium iodide), as a host material, and thallium (Tl), as a luminescent center, with bismuth (Bi).


Patent
Tohoku University and Nihon Kessho Kogaku Co. | Date: 2014-06-25

An afterglow property of cesium iodide: thallium (CsI:Tl), in which CsI is a host material and doped with thallium, is improved. It is possible to improve the afterglow property of a scintillator by doping a crystal material including CsI (cesium iodide), as a host material, and thallium (Tl), as a luminescent center, with bismuth (Bi).


Patent
Nihon Kessho Kogaku Co. | Date: 2013-11-07

A fluorite having all the more excellent laser durability compared to a conventional fluorite is provided. A fluorite is proposed, in which the standard deviation of the surface areas of the Voronoi regions in a diagram from a Voronoi decomposition of the distribution of etch-pits in the (111) plane is 6,000 m^(2 )or less, or, in which the standard deviation of the distances of the Delaunay edges in a diagram from a Delaunay decomposition of the distribution of etch-pits of the (111) plane is 80 m or less.


Patent
Nihon Kessho Kogaku Co. | Date: 2011-06-30

A fluorite with excellent laser durability is provided by devising a heat-treatment method for CaF_(2 )crystal. A fluorite production method is proposed, wherein heat-treatment is carried out by providing, through compartment walls in the periphery of a fluorite crystal, a fluoride gas trap layer containing a fluoride gas-adsorbing material.


Patent
Nihon Kessho Kogaku Co. | Date: 2011-06-30

A fluorite having all the more excellent laser durability compared to a conventional fluorite is provided. A fluorite is proposed, in which the standard deviation of the surface areas of the Voronoi regions in a diagram from a Voronoi decomposition of the distribution of etch-pits in the (111) plane is 6,000 m^(2 )or less, or, in which the standard deviation of the distances of the Delaunay edges in a diagram from a Delaunay decomposition of the distribution of etch-pits of the (111) plane is 80 m or less.


Patent
Nihon Kessho Kogaku Co. | Date: 2014-03-19

A fluorite having all the more excellent laser durability compared to a conventional fluorite is provided. A fluorite is proposed, in which the standard deviation of the surface areas of the Voronoi regions in a diagram from a Voronoi decomposition of the distribution of etch-pits in the (111) plane is 6,000 m^(2) or less, or, in which the standard deviation of the distances of the Delaunay edges in a diagram from a Delaunay decomposition of the distribution of etch-pits of the (111) plane is 80 m or less.


Patent
Nihon Kessho Kogaku Co. | Date: 2013-05-29

A fluorite with excellent laser durability is provided by devising a heat-treatment method for CaF_(2) crystal. A fluorite production method is proposed, wherein heat-treatment is carried out by providing, through compartment walls in the periphery of a fluorite crystal, a fluoride gas trap layer containing a fluoride gas-adsorbing material.


Patent
Nihon Kessho Kogaku Co. | Date: 2013-07-03

A fluorite having all the more excellent laser durability compared to a conventional fluorite is provided. A fluorite is proposed, in which the standard deviation of the surface areas of the Voronoi regions in a diagram from a Voronoi decomposition of the distribution of etch-pits in the (111) plane is 6,000 m^(2) or less, or, in which the standard deviation of the distances of the Delaunay edges in a diagram from a Delaunay decomposition of the distribution of etch-pits of the (111) plane is 80 m or less.

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