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Niehenke E.C.,Niehenke Consulting
IEEE Microwave Magazine | Year: 2010

Replies to various inquiries from Microwave Theory and Techniques Society (MTT-S) members that were received from February 15 to April 9, 2010, are presented. The inquiry regarding the dates, details, and location of IMS2011 was answered to be held in Baltimore, Maryland, June 5-11, 2011 at the Baltimore Inner Harbor Convention Center. Inquiry regarding the financial assistance offered by MTT-S highlight a provision of up to US$1,000 for Chapters comprising only MTT-S members, or up to US$500 for Chapters that are associated with other IEEE Societies. Becoming a IEEE Senior Member related inquiry was answered with a requirement of a candidate to be an engineer, scientist, educator, technical executive, or originator in IEEE-designated fields, with many more additional requirements. Regarding receiving periodicals, it was clarified that it takes about six weeks to make up the mailing labels, which is the reason for the delay. Source


Niehenke E.C.,Niehenke Consulting
IEEE Microwave Magazine | Year: 2016

Presents remarks from the MTTS Ombudsman. © 2016 IEEE. Source


Niehenke E.C.,Niehenke Consulting
2015 IEEE MTT-S International Microwave Symposium, IMS 2015 | Year: 2015

This paper traces the development of transistors for power amplifiers (PAs). Technological transistor innovations have raised output power levels, the frequency of operation and the efficiency of power amplifiers. Devices to be discussed include the bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), complimentary metal oxide semiconductor (CMOS), laterally diffused metal oxide semiconductor (LDMOS), metal-semiconductor field effect transistor (MESFET), high electron mobility transistor (HEMT), and pseudomorphic high electron transistor (PHEMT). Semiconductors for PAs include Silicon (Si), Gallium Arsenide (GaAs), Indium Phosphide (InP), and Gallium Nitride (GaN) and the various heterojunctions of these semiconductors. © 2015 IEEE. Source


Niehenke E.C.,Niehenke Consulting
IEEE Microwave Magazine | Year: 2011

The replies to some inquiries from IEEE Microwave Theory and Techniques Society (MTT-S) members from June 1, 2011 to August 8, 2011, were sent. One member wanted contact information for another person, which was then provided. Four IEEE MTT-S International Microwave Symposium (IMS) 2011 attendees reported problems with their IMS2011 multipurpose pens. One member could not attend IMS2011 and wanted to purchase the IMS2011 Digest. This can be purchased through Current Associates Inc., by visiting www.proceedings. com or calling +1 866.964.0401. One person was interested in exhibiting at IMS2012 in Montreal, Canada and wanted the contact information for the IMS exhibition manager. The person was suggested to contact Lee Wood of MP Associates at lee@mpassociates. com, tel. +1 303.530.4562 ext. 112. One member was missing a MTT-S periodical that was mailed to them. Another person requested instructions for preparing a paper for IEEE Microwave and Wireless Components Letters. Source


Niehenke E.C.,Niehenke Consulting
IEEE MTT-S International Microwave Symposium Digest | Year: 2012

This paper traces the development of low noise devices and amplifiers. The device technology changed significantly over time starting with the vacuum tube, then varactor diode parametric amplifiers, and evolving to the three terminal solid state transistor. Technological transistor innovations lowered the low noise amplifier (LNA) noise figure and raised the frequency of operation. Devices include the bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), complimentary metal oxide semiconductor (CMOS) transistor, field effect transistor (FET), high electron mobility transistor (HEMT), pseudomorphic high electron transistor (PHEMT), and metamorphic high electron mobility transistor (MHEMT). LNA semiconductors include Silicon (Si), Gallium Arsenide (GaAs), Indium Phosphide (InP), and Gallium Nitride (GaN) and the various heterojunctions of these semiconductors improve the performance © 2012 IEEE. Source

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