Tokushima, Japan
Tokushima, Japan

Nichia Corporation is a Japanese chemical engineering and manufacturing company, headquartered in Tokushima, Japan with global subsidiaries, that specializes in the manufacturing and distribution of phosphors, including light-emitting diodes , laser diodes, battery materials, and calcium chloride. The Nichia Corporation comprises two divisions-Division 1, responsible for phosphors and other chemicals, and Division 2, responsible for LEDs.Nichia is the world’s largest supplier of LEDs. It designs, manufactures, and markets LEDs for display, LCD backlighting, automotive and general lighting applications with the many different leds across the entire visible spectrum. Nichia’s invention and development of white LEDs have spanned several accomplishments throughout the history of the company.With 6,600 employees and multiple subsidiaries worldwide, Nichia achieved sales of approximately US$2.3 billion in 2007. Wikipedia.

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A method of manufacturing a light emitting device having a resin package which provides an optical reflectivity equal to or more than 70% at a wavelength between 350 nm and 800 nm after thermal curing, and in which a resin part and a lead are formed in a substantially same plane in an outer side surface, includes a step of sandwiching a lead frame provided with a notch part, by means or an upper mold and a lower mold, a step of transfer-molding a thermosetting resin containing a light reflecting material in a mold sandwiched by the upper mold and the lower mold to form a resin-molded body in the lead frame and a step of cutting the resin-molded body and the lead frame along the notch part.


Patent
Nichia Corporation | Date: 2017-01-27

A light emitting device includes a substrate, a light emitting element and a sealing resin member. The substrate includes a flexible base, a plurality of wiring portions and a groove portion. The groove portion is formed between the plurality of wiring portions spaced apart from each other, and includes a first groove portion, a second groove portion, and a third groove portion extending in a direction intersecting the first and second groove portions. The first and third groove portions are connected to each other with a curve. The second and third groove portions are connected to each other with a curve. The sealing resin member seals the light emitting element and the substrate. The sealing resin member is arranged on the third groove portion and spaced apart from the first groove portion and the second groove portion.


A method of producing a nitride fluorescent material having a high light emission intensity and including a calcined product having a composition represented by formula M^(a)_(v)M^(b)_(w)M^(c)_(x)M^(d)_(y)N_(z) is provided. M_(a) is at least one element selected from Sr, Ca, Ba, and Mg; M^(b) is at least one element selected from Li, Na, and K; M^(c) is at least one element selected from Eu, Mn, Tb, and Ce; M^(d) is at least one element selected from Al, B, Ga, and In; v, w, x, y, and z satisfy 0.8 v 1.1, 0.8 w 1.1, 0.001 < x 0.1, 2.0 y 4.0, and 3.0 z 5.0, respectively.In one embodiment, the method includes mixing the calcined product with a polar solvent, and optionally removing the polar solvent after mixing, wherein the polar solvent is alcohol and/or ketone containing water in a range of 0.0 1 % by mass or more and 12% by mass or less. In another embodiment, the method includes: providing a calcined product having the composition represented by the formula (I); mixing the calcined product with a polar solvent having a relative dielectric constant in a range of 10 to 70 at 20C, and optionally removing the polar solvent after mixing. A nitride fluorescent material and a light-emitting device are also provided.


A method for producing a nitride fluorescent material having high emission luminance can be provided. The method includes heat-treating a raw material mixture containing silicon nitride, silicon, an aluminium compound, a calcium compound, and a europium compound.


Patent
Nichia Corporation | Date: 2017-02-01

A light emitting element (10) with a hexagonal planar shape, has: an n-side semiconductor layer (2n); a p-side semiconductor layer (3p) provided on the n-side semiconductor layer; a plurality of holes (6) that are provided to an area excluding at least three corners at mutually diagonal positions of the p-side semiconductor layer in plan view, and expose the n-side semiconductor layer; a first p-electrode (4p) provided in contact with the p-side semiconductor layer; second p-electrodes (5p) provided to the at least three corners on the first p-electrode; and an n-electrode (7n) that is provided on the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.


Patent
Nichia Corporation | Date: 2017-02-01

A light emitting device is provided. The light emitting device includes a light emitting element, a wavelength converting member, a light transmissive member, an adhesive member, and a light reflective member. The wavelength converting member has an upper surface and lateral surfaces, contains a fluorescent substance, and is placed on the light emitting element. The light transmissive member covers the upper surface of the wavelength converting member. The adhesive member is interposed between the light emitting element and the wavelength converting member, and covers the lateral surfaces of the wavelength converting member. The light reflective member covers the lateral surfaces of the wavelength converting member via the adhesive member.


Patent
Nichia Corporation | Date: 2017-04-05

A semiconductor package mounted with a semiconductor component comprising a package upper surface and a package lower surface, and a package front surface and a package back surface, facing each other respectively, wherein the package front surface and the package back surface are adjacent to the package upper surface and the package lower surface respectively, the package upper surface and the package lower surface are disposed so that the thickness of the package decreases from the package front side toward the package back surface side, and a protrusion is formed on at least either the package upper surface or the package lower surface so as to be continuous to the package back surface, wherein a recess step is formed by defining a recess approximately in the center of the package back surface, and a protrusion is formed protruding from the bottom surface of the recess step and the top of the protrusion is fit within the recess step.


Patent
Nichia Corporation | Date: 2017-03-15

A semiconductor laser device includes a base, a semiconductor laser element, a lid, a support member, a wavelength converting member, a holding member, and a buffer material. The lid has a recess formed in an upper portion of the lid, and a through-hole formed in the bottom of the recess. The support member is disposed in the recess and has a through-hole. A diameter of the through-hole of the support member is smaller than that of the through-hole of the lid. A coefficient of thermal expansion of the support member is different from that of the lid. The wavelength converting member is supported in the through-hole of the support member. The holding member is fixed to the lid and holds the support member. The buffer material is disposed in at least a part of a space between the lateral surfaces of the recess and the support member.


Patent
Nichia Corporation | Date: 2017-09-27

A light-emitting device (100) includes: a semiconductor layered structure (10); an upper electrode (11) disposed on a portion of an upper surface of the semiconductor layered structure (10); a lower electrode (12) disposed on a lower surface of the semiconductor layered structure (10) in a region spaced from a region directly under the upper electrode (11), the lower electrode (12) being reflective; and a protective film (13) disposed continuously on a surface of the upper electrode (11) and on the upper surface of the semiconductor layered structure (10). A thickness of a first portion of the protective film (13), which is disposed at least in a region (12R) directly above the lower electrode (12), is smaller than a thickness of a second portion of the protective film (13), which is disposed continuously on the surface of the upper electrode (11) and on a portion of the upper surface of the semiconductor layered structure (10) adjacent to the portion on which the upper electrode (11) is disposed.


Patent
Nichia Corporation | Date: 2017-09-13

A semiconductor device includes a semiconductor layer stacked on a substrate, a stripe-shaped ridge formed on a surface of the semiconductor layer, and electrode formed on an upper surface of the ridge and a protective film disposed on each side of the ridge. The electrode includes a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge. The protective film covers a region from a side surface of the ridge to the sloped surface of the sloped portion of the electrode.

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