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Sarkar P.,Indian National Institute of Engineering | Ghatak R.,National Institute of Technology Durgapur | Pal M.,NFET | Poddar D.R.,Jadavpur University
IEEE Microwave and Wireless Components Letters | Year: 2012

In this letter, an ultra-wideband (UWB) bandpasss filter with multiple notch bands is presented. The UWB bandpass characteristic is achieved using a modified distributed highpass filter (HPF) and suppressing higher order harmonics of the HPF by realizing defected stepped impedance resonator. The dual band notches at 5.75 and 8.05 GHz are obtained by embedding two open stubs on the main microstrip line. The in band and out of band performance obtained from fullwave electromagnetic simulation, equivalent circuit model and measurement are in good agreement. © 2001-2012 IEEE.

Sarkar P.,North - Eastern Hill University | Pal M.,NFET | Ghatak R.,National Institute of Technology Durgapur | Poddar D.R.,Ja davpur University
Progress in Electromagnetics Research Letters | Year: 2013

In this paper, a miniature ultrawideband (UWB) bandpass filter with dual notch bands and wide upper stopband is presented. The ultrawide passband characteristic is achieved using a microstrip to slot line transition, and a wide upper stop band is realized using an elliptical lowpass filter. The dual band notches at 5.46 GHz and 8.04 GHz are obtained by incorporating defected microstrip structure in the input and output sections. A prototype of the proposed UWB bandpass filter is fabricated and measured. The equivalent circuit of the proposed filter is also presented. A good agreement between the measured, EM simulated and circuit simulated responses is obtained.

Gorai A.,KIIT University | Karmakar A.,Netaji Subhash Engineering College | Pal M.,NFET | Ghatak R.,National Institute of Technology Durgapur
Progress In Electromagnetics Research C | Year: 2013

A super-wideband antenna based on a propeller shaped printed monopole with a CPW feed is presented in this paper. The enhanced bandwidth is obtained by modifying the disk of a conventional circular disk monopole to resemble a propeller. This design produces an extremely wide impedance bandwidth from 3 to 35 GHz with an impedance bandwidth ratio of 11.6: 1. The gain of the proposed antenna varies from 4 dBi to 5.2 dBi. The antenna has fairly stable radiation characteristics throughout its operating band. The developed prototype is fabricated and measured. Simulation and experimental results are in good agreement.

Karmakar A.,Netaji Subhash Engineering College | Verma S.,National Institute of Technology Durgapur | Pal M.,NFET | Ghatak R.,National Institute of Technology Durgapur
Progress In Electromagnetics Research C | Year: 2012

A compact dual band notched Ultra-wideband (UWB) antenna with multiple Hilbert curve slots is proposed that exhibits an impedance bandwidth from 2.5 GHz to 12 GHz Hilbert curve slots result in band notch in the frequency range 5.15-5.85 GHz assigned to IEEE 802.11a and HYPERLAN/2 as well as 7.9-8.4 GHz band assigned to X-band uplink satellite communication systems. The antenna gain varies from 3 dBi to 5 dBi over the operating frequency. Stable radiation patterns throughout its operating frequency are obtained Over all antenna size is 25mm by 45.75mm including the ground plane. Simulation and measured result of the proposed antenna are in good agreement.

Mandal B.K.,NFET | Bhattacharyya D.,NFET | Bandyopadhyay S.K.,University of Calcutta
Proceedings - 2013 International Conference on Communication Systems and Network Technologies, CSNT 2013 | Year: 2013

We design an algorithm to merge both RSA algorithm and Diffie-Hellman Algorithm of them to provide a user with even higher level of data security. Actually, our intent is to secure data of smaller as well as larger size by obtaining one randomly chosen key pair from set of RSA keys and one randomly chosen secret key using Diffie-Hellman algorithm and then applying RSA encryption to make even public components of Diffie-Hellman algorithm inaccessible for any eavesdropper freely. Encrypted exchange of public components of Diffie-Hellman part of the system makes it hidden from all other than intended users to see Diffie-Hellman generator and prime modulus. This will make our algorithm M*N times complex to break using even the latest version of Brute Force attack, where M and N are corresponding complexities imposed by the Diffie-Hellman and RSA algorithms respectively. Encryption algorithms play a main role in information security systems. On the other side, those algorithms consume a significant amount of computing resources such as CPU time, memory, and battery power. This paper provides evaluation of five of the most common encryption algorithms namely: AES (Rijndael), DES, 3DES, RC2, Blowfish. A comparison has been conducted with our proposed algorithm. © 2013 IEEE.

Ghatak R.,National Institute of Technology Durgapur | Pal M.,NFET | Goswami C.,Asansol Engineering College | Poddar D.R.,Jadavpur University
Microwave and Optical Technology Letters | Year: 2013

In this article, a novel design of complementary spiral resonators as miniaturized metamaterial particles based on Moore curve fractal shape is presented. The proposed design of metamaterial unit cell is investigated using a microstrip line loaded with series gap discontinuities and implementing fractal shape complementary spiral resonator in ground plane that behaves as a composite right left hand transmission line. It is observed that Moore curve fractal-shaped spiral resonator provides 49% size reduction as compared to conventional split ring resonators. An equivalent lumped element circuit model of the proposed composite right left handed transmission line is developed to analyze the proposed topology. A close agreement between electromagnetic simulation, circuit simulation, and measurement is obtained. Copyright © 2013 Wiley Periodicals, Inc.

Gorai A.,National Institute of Technology Durgapur | Karmakar A.,Netaji Subhash Engineering College | Pal M.,NFET | Ghatak R.,National Institute of Technology Durgapur
Journal of Electromagnetic Waves and Applications | Year: 2013

A planar elliptical shape band-notched UWB antenna with multiple fractal-shaped slots and a Sierpinski fractal curve-shaped ring resonator at the back of the substrate is introduced in this paper. The proposed antenna exhibits a triple-band notch characteristic. Koch fractal slot etched from the radiator is responsible for creating notched band centred at 5.5 GHz for wireless local area network rejection. The Minkowski fractal slots in the ground planes create rejection characteristics at 8.1 GHz to avoid interference with X-band uplink satellite communication systems. The RFID rejection band centred at 6.8 GHz is achieved by using a Sierpinski fractal curve-shaped ring resonator at the back of the substrate. Sierpinski fractal slot of third iteration on the radiator contributes to an impedance bandwidth of 2.8-12 GHz with VSWR > 2 by improving matching at lower frequencies except at three notched bands. The antenna gain varies from 1.5 to 4 dBi over the band. Stable radiation patterns are obtained throughout its operating frequency. The antenna has a compact size of 41 mm × 45 mm. © 2013 Taylor & Francis.

Karmakar A.,Netaji Subhash Engineering College | Verma S.,National Institute of Technology Durgapur | Pal M.,NFET | Ghatak R.,National Institute of Technology Durgapur
International Journal of Microwave and Optical Technology | Year: 2012

An ultrawideband printed Y-shaped Sierpinski carpet fractal patterned slotted monopole antenna on a similar fractal based slotted ground plane is presented in this paper. The overall structure shows a wide impedance bandwidth extending from 3.7GHz to 21 GHz. The antenna exhibits satisfactory omnidirectional radiation characteristics throughout its operating band with measured peak gain varying from 4.2dBi to 6.9dBi. The proposed antenna shows a near flat group delay profile with variation within 5ns. This enables the antenna to be useful for ultrawideband imaging application. © 2012 ISRAMT.

Banerjee P.,Techno India | Acharyya A.,Supreme Knowledge Foundation Group of Institutions | Biswas A.,NFET | Bhattacharjee A.K.,National Institute of Technology Durgapur
Journal of Computational Electronics | Year: 2016

In this paper, a two-dimensional (2-D) large-signal model has been presented to study the effect of steady magnetic field on the RF performance of millimeter-wave (mm-wave) double-drift region impact avalanche transit time device. Magnetic field sensitivities of various static and large-signal parameters of the device designed to operate at W-band have been calculated and discussed in detail. Results show that the frequency tuning of the source of around 3.64 GHz is achievable with maximum sensitivity of about (Formula presented.) 1.59 GHz (Formula presented.) for the application of transverse magnetic field varying from 4.0 to 5.0 T. The nature of both frequency and power tuning of the device due to application of transverse magnetic field is in good agreement with the experimental results carried out earlier. © 2015, Springer Science+Business Media New York.

Home > Press > Leti Develops Local-strain Techniques in FD-SOI Fabrication To Improve Next-Generation Performance, Energy Use Abstract: CEA-Leti today announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed at the same, or lower, power consumption, and improve performance. The local-strain solutions are dual-strained technologies: compressive SiGe for PFETs and tensile Si for NFETs. In addition to clearing the path to improved performance in FD-SOI technology, they preserve its excellent electrostatic integrity and its in situ performance tunability, due to back biasing. The two techniques Leti developed can induce local stress as high as 1.6 GPa in the MOSFETs channel. The first relies on strain transfer from a relaxed SiGe layer on top of SOI film. In a recent paper in the ECS Journal of Solid State Science and Technology, Leti researcher Sylvain Maitrejean described how with this technique he was able to boost the short-channel electron mobility by more than 20 percent compared to unstrained reference. This shows significant promise for enhancing the on-state currents of CMOS transistors and thus for improving the circuit’s speed. The second technique is closer to strain memorization methods and relies on the ability of the BOX to creep under high-temperature annealing. At SSDM 2015 in Japan, Leti researchers showed that with this local-stress technique they can turn regular unstrained SOI structures into tensile strained Si (sSOI), for NFET areas. Moreover, this “BOX-creep” process also can also be applied to compressive strain creation, as presented at the 2015 Silicon Nanoelectronics Workshop (SNW) conference. Strained channels enable an increase in the on-state current of CMOS transistors. As a result, the corresponding IC circuits can deliver more speed at the same power, or reduced consumed power and longer battery life at the same performance. They also have been proven to be an effective way to increase performance of n and p MOSFET transistors via mobility enhancement of electrons and holes. These kinds of techniques enable boosting of the carrier transport in the CMOS channels, and thus increasing the on-state currents. Beginning with the 90nm node, this strain option has been one of the main approaches of the microelectronics industry for improving the IC speed in bulk transistors. While it was not necessary at the 28nm node for FD-SOI, it becomes mandatory beyond the 22/20nm node. “Leti has continuously focused on improving and fine-tuning FD-SOI technology’s inherent advantages, since pioneering the technology 20 years ago,” said Maud Vinet, head of Leti’s Advanced CMOS Laboratory. “These two new techniques broaden the capabilities of Leti’s FD-SOI platform for next-generation devices, and further position the technology to be a vital part of the Internet of Things and electronics products of the future.” About CEA Leti As one of three advanced-research institutes within the CEA Technological Research Division, CEA Tech-Leti serves as a bridge between basic research and production of micro- and nanotechnologies that improve the lives of people around the world. It is committed to creating innovation and transferring it to industry. Backed by its portfolio of 2,800 patents, Leti partners with large industrials, SMEs and startups to tailor advanced solutions that strengthen their competitive positions. It has launched 54 startups. Its 8,500m² of new-generation cleanroom space feature 200mm and 300mm wafer processing of micro and nano solutions for applications ranging from space to smart devices. With a staff of more than 1,800, Leti is based in Grenoble, France, and has offices in Silicon Valley, Calif., and Tokyo. Follow us at and @CEA_Leti. For more information, please click If you have a comment, please us. Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

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