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Lisbon, Portugal

Universidade Nova de Lisboa ˈnɔvɐ dɨ liʒˈboɐ]) or NOVA is a Portuguese public university established in 1973, in Lisbon and is the youngest of the three public universities of Lisbon. NOVA is a higher education institution with internationally recognized research and quality teaching that ensures high levels of professional success to its students.In 2014, the THE-QS World University Rankings has evaluated NOVA as one of the world's best universities being ranked number 312 in the world. Wikipedia.


Pina F.,New University of Lisbon
Journal of Agricultural and Food Chemistry | Year: 2014

Independently of the natural or synthetic origin, flavylium derivatives follow the same network of chemical reactions. Actually, the flavylium cation is stable only at low pH values. Increasing the pH gives rise to the formation of several species: quinoidal bases, hemiketal, cis- and trans-chalcones, and their deprotonated forms. A deep knowledge of the thermodynamics and kinetics of these species is an essential tool to practical applications of these compounds, in particular, in the domain of food chemistry. In this work the network of chemical reactions involving flavylium derivatives is presented, and the respective thermodynamics and kinetics are discussed in detail, including the mathematical expressions and a step-by-step procedure to calculate all of the rate and equilibrium constants of the system. Examples of systems possessing a high or low cis-trans isomerization barrier are shown. Recent practical applications of anthocyanins and related compounds illustrate the potentialities of the flavylium-based family of compounds. © 2014 American Chemical Society. Source


Carlos Lima J.,New University of Lisbon | Rodriguez L.,University of Barcelona
Chemical Society Reviews | Year: 2011

Gold(i) alkynyl complexes present a growing research field with respect to their very wide range of applications in different areas such as luminescence, molecular recognition, optical switches, electronics and catalysis. Biological applications are also being developed in the recent years, where these complexes are used as therapeutic agents against different illnesses such as cancer cells or malaria. Related to luminescence, a general overview of the different states responsible for the observed emission is also included in this critical review. In some cases, the assignment is complicated due to the influence of the gold(i) atom and its capability to form metal⋯metal interactions (aurophilicity). Although an extensive discussion has been found in the literature related to the luminescent properties of these complexes, to the best of our knowledge there are not reports covering the span of their very interesting applications. The widespread research fields where this kind of complexes could present a key role is presented in this review (119 references). © 2011 The Royal Society of Chemistry. Source


Scheven U.M.,New University of Lisbon
Physical Review Letters | Year: 2013

We show that transverse dispersion in flow through randomly packed monodisperse spheres (sphere diameter d) is a velocity-dependent superposition of three separable random processes - diffusion with coefficient Dr, intrinsic mechanical dispersion with dispersivity lm=d/33 caused by advection on streamlines, and a newly identified coupled mechanical dispersion with dispersivity lc=d/11, which arises by coupled advection and transverse diffusion at the pore scale. The velocity dependence of the transverse dispersivity is derived from first principles. Our analysis is insensitive to details of the pore geometry and is verified by pulsed field gradient NMR experiments which covered 4.5 orders of magnitude in reduced velocity. © 2013 American Physical Society. Source


Patent
Electronics, Telecommunications Research Institute and New University of Lisbon | Date: 2015-05-05

Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a CuSn alloy, and a nickel tin oxide containing a NiSn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.


Patent
New University of Lisbon, Electronics and Telecommunications Research Institute | Date: 2011-04-14

Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a CuSn alloy, and a nickel tin oxide containing a NiSn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

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