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Verrières-le-Buisson, France

Patent
New Imaging Technologies | Date: 2013-02-13

The invention relates to an active CMOS pixel structure comprising: at least one photoelectric conversion zone (NPD) defined by n-doping of the substrate, said zone accumulating an amount of charge during an exposure to light and comprising a p-doped surface zone (PIN); and at least one MOS transfer transistor (TX), the gate of said transfer transistor (TX) being electrically insulated from the substrate and being used to control transfer of said charge from said photoelectric conversion zone (NPD) to said floating diffusion node (FD), in which the gate of said transfer transistor (TX) partially covers said p-doped surface zone (PIN), and said photoelectric conversion zone (NPD) extends under said gate of said transfer transistor (TX) at least as far as the end of the p-doped surface zone (PIN).


Patent
New Imaging Technologies | Date: 2015-03-31

The invention relates to a structure of an active pixel of the CMOS type (


Patent
New Imaging Technologies | Date: 2012-07-11

The invention relates to an InGaAs photodiode army (


Patent
New Imaging Technologies | Date: 2013-10-25

The invention concerns a structure of a CMOS active pixel, comprising a semi-conductive substrate (


Patent
New Imaging Technologies | Date: 2010-03-10

An image matrix sensor having a plurality of individual detection structures associated with respective pixels, each individual detection structure including a photodiode having at least one solar cell mode operating range, a first amplifier stage constantly supplied with power and receiving, as an input, a voltage dependent on the voltage of the photodiode which falls within said range; and a second amplifier stage linked to the output of the first amplifier stage and supplied with power in a different manner according to whether or not the first amplifier stage is read.

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