Verrières-le-Buisson, France
Verrières-le-Buisson, France

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Robinet S.,CEA Grenoble | Audebert P.,CEA Grenoble | Regis G.,MIND Microtechnologies | Zongo B.,New Imaging Technologies | And 4 more authors.
IEEE Journal on Emerging and Selected Topics in Circuits and Systems | Year: 2011

Monitoring of electrocorticography signals using multi-electrode array creates new opportunities for neural prosthetic applications. In this paper, we present a 32-channel recording ASIC that provides low-noise amplification and analog filtering. It also includes a 12-bit analog-to-digital conversion function, and offers programmable output rates through a serial peripheralinterface (SPI). The targeted application is a remote-powered wireless implantable ECoG recording system. Each recording channel has a measured 0.7 μV rms input-referred noise on a [0.5-300 Hz] bandwidth. The device was fabricated in a 0.35 μm complementary metal-oxide-semiconductor process for a total die area of 86 mm 2 with an analog power consumption limited to 134 μW per channel. © 2011 IEEE.

Ni Y.,New Imaging Technologies | Arion B.,New Imaging Technologies | Zhu Y.M.,New Imaging Technologies | Potet P.,New Imaging Technologies | And 5 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

This paper describes a single-chip InGaAs SWIR camera with more than 120dB instant operational dynamic range with an innovative CMOS ROIC technology, so called MAGIC, invented and patented by New Imaging Technologies. A 320x256- pixel InGaAs 25μm pitch photodiode array, designed and fabricated by III-Vlab/Thales Research & Technology(TRT), has been hybridized on this new generation CMOS ROIC. With NIT's MAGIC technology, the sensor's output follows a precise logarithmic law in function of incoming photon flux and gives instant operational dynamic range (DR) better than 120 dB. The ROIC incorporates the entire video signal processing function including a CCIR TV encoder, so a complete SWIR InGaAs camera with standard video output has been realized on a single 30×30 mm2 PCB board with 1/4 W power consumption. Neither TEC nor NUC is needed from room temperature operation. The camera can be switched on and off instantly, ideal for all the portable battery operated SWIR band observation applications. The measured RMS noise and FPN noise on the prototype sensor in dark conditions are 0.4 mV and 0.27 mV respectively. The signal excursion from pixel is about 300mV over the 120 dB dynamic range. The FPN remains almost constant over the whole operation dynamic range. The NEI has been measured to be 3,71E+09 ph/s/cm2 with 92 equivalent noise photons at 25Hz frame rate, better than the same architecture of InGaAs photodiode array hybridized on an Indigo ROIC ISC9809 with a pitch of 30 μm for which a readout noise of 120 electrons is observed. © 2011 SPIE.

Reverchon J.-L.,III VLab | Decobert J.,III VLab | Djedidi A.,III VLab | Gentner J.-L.,III VLab | And 9 more authors.
Optical Engineering | Year: 2011

Short-wavelength infrared image sensors based on p-i-n photodiode arrays present a tremendous interest in applications such as passive and active imagery for laser detection/warning, hot spot or detection for lasers sensors, enhanced vision systems or low light level sensors. The capability to work at room temperature with dark current equivalent to silicon-based devices is another motivation for the fast development of this technology. This paper presents several modules and camera based on InGaAs photodiode arrays from the III-VLab. First, we describe the electro-optics performance in terms of dark signal, sensitivity, and particularly the visible extension capability. We also present a nucless logarithmic sensor based on a 1/2 video graphics array (VGA) format at a pitch of 25 μm initially designed for visible CMOS camera chip. We will also present the next generation of focal plane arrays based on a VGA format of 640×512 pixels with a pitch of 15 μm. This array will be associated to a CTIA readout circuit and also to an innovative CMOS logarithmic wide dynamic range ROIC, developed by New Imaging Technologies. This VGA logarithmic device developed for automotive safety will involve visible extension capability in a European project named 2Wide-sense. © 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).

Ni Y.,New Imaging Technologies | Arion B.,New Imaging Technologies | Zhu Y.,New Imaging Technologies | Zongo B.,New Imaging Technologies | And 2 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

We present in this paper a flexible Wide Dynamic Range VGA ROIC for InGaAs SWIR imaging application. The pixel design of this ROIC incorporates both the unique solar cell mode from NIT and also a source-follower (SF) based direct injection linear mode. The solarcell mode operation can cover an instantaneous dynamic range of more than 120dB in a single frame without off-chip digital NUC, while the SF mode can operation sensor in a conventional SF linear mode but with a on-chip offset compensation. The off-chip digital KTC noise cancellation is also possible in the SF mode. This ROIC has been designed and fabricated with a standard 0.18um 1P3M process, destinated to 640x512-pixel PDA of 15um pitch. The horizontal scanning speed is maximum 100MHz and 80MHz guaranteed, giving more than 150 frames per second. The overall performance of this ROIC coupled to III-VLab extended visible InGaAs PDA will be presented at the conference. © 2012 SPIE.

New Imaging Technologies | Date: 2015-03-31

The invention relates to a structure of an active pixel of the CMOS type (1) that comprises: at least one photodiode (10), characterised in that it comprises means for reading any bias voltage in the evolution phase of the photodiode (10) upon exposure.

New Imaging Technologies | Date: 2012-07-11

The invention relates to an InGaAs photodiode army (101) and to the method for manufacturing same, wherein said array includes: a cathode including at least one indium-phosphide substrate layer (4) and an active gallium-indium arsenide layer (5); and a plurality of anodes (3) at least partially formed in the active gallium-indium arsenide layer by diffusing a P-type dopant, the interaction between an anode (3) and the cathode forming a photodiode. According to said method, an indium-phosphide passivation layer (6) is arranged on the active layer before the diffusion of the P-type dopant forming the anodes (3), and a first selective etching is performed so as to remove, over the entire thickness thereof, an area (10) of the passivation layer (6) surrounding each anode (3).

New Imaging Technologies | Date: 2010-03-10

An image matrix sensor having a plurality of individual detection structures associated with respective pixels, each individual detection structure including a photodiode having at least one solar cell mode operating range, a first amplifier stage constantly supplied with power and receiving, as an input, a voltage dependent on the voltage of the photodiode which falls within said range; and a second amplifier stage linked to the output of the first amplifier stage and supplied with power in a different manner according to whether or not the first amplifier stage is read.

New Imaging Technologies | Date: 2013-02-13

The invention relates to an active CMOS pixel structure comprising: at least one photoelectric conversion zone (NPD) defined by n-doping of the substrate, said zone accumulating an amount of charge during an exposure to light and comprising a p-doped surface zone (PIN); and at least one MOS transfer transistor (TX), the gate of said transfer transistor (TX) being electrically insulated from the substrate and being used to control transfer of said charge from said photoelectric conversion zone (NPD) to said floating diffusion node (FD), in which the gate of said transfer transistor (TX) partially covers said p-doped surface zone (PIN), and said photoelectric conversion zone (NPD) extends under said gate of said transfer transistor (TX) at least as far as the end of the p-doped surface zone (PIN).

New Imaging Technologies | Date: 2013-10-25

The invention concerns a structure of a CMOS active pixel, comprising a semi-conductive substrate (1) of a first type, at least one first photodiode operating in photovoltaic mode comprising a photovoltaic conversion area (2) defined by a doped area of a second type forming a PN junction with the substrate, said first photodiode re-emitting photoelectric charge carriers collected by the PN junction during the exposure of said first photodiode to a light, at least one second photodiode operating in integration mode and reverse-biased, said second photodiode comprising a charge accumulation area (3) defined by a doped area of the second type forming a PN junction with the substrate, said charge accumulation area being exposed to the charge carriers from the photovoltaic conversion area (2) in order to accumulate such charge carriers.

New Imaging Technologies | Date: 2014-01-31

The invention concerns a photodiode array, and the method for producing same, comprisinga cathode comprising at least one substrate layer (4) made from a material from the indium phosphide family and one active layer (5) made from a material from the gallium indium arsenide family, and characterised in that the array further comprises at least two sorts of doped regions of the same type at least partially formed in the active layer (5):first doped regions (3) forming, with the cathode, photodiodes for forming images,at least one second doped region (8) absorbing excess charge carriers so as to discharge them.

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