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Cheong W.-S.,New Devices and Materials Research Group | Shin J.-H.,New Devices and Materials Research Group | Chung S.M.,New Devices and Materials Research Group | Hwang C.-S.,New Devices and Materials Research Group | And 2 more authors.
Journal of Nanoscience and Nanotechnology | Year: 2012

Transparent zinc tin oxide thin-film transistors (ZTO-TFTs) [Zn: Sn = 4:1∼2:1] have been fabricated so as to estimate the electrical instability under constant current stress. The relative intensity of the drain current noise power spectra density has been shown to have a typical 1/f -noise character, and it is implied that the mobility fluctuation in ZTO-TFT [Zn: Sn=4:1] can be enhanced by a short-range ordering in amorphous Zn-CSn-Coxide, causing a larger shift of the threshold voltage (ΔV th). © 2012 American Scientific Publishers.

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