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Crane, IN, United States

Ahlbin J.R.,Vanderbilt University | Gadlage M.J.,NAVSEA Crane | Atkinson N.M.,Vanderbilt University | Narasimham B.,Broadcom Corporation | And 5 more authors.
IEEE Transactions on Device and Materials Reliability | Year: 2011

Heavy-ion data from a 130-nm bulk CMOS process shows a counterproductive result in using a common single-event charge collection mitigation technique. Guard bands, which are well contacts that surround individual transistors, can reduce single-event pulsewidths for normal strikes, but increase them for angled strikes. Calibrated 3-D TCAD mixed-mode modeling has identified a multiple-transistor charge collection mechanism that explains the experimental data, namely that angled strikes result in charge collection in the normally ON device that increases the restoring current on the struck device. © 2010 IEEE.

Gadlage M.J.,NAVSEA Crane | Ahlbin J.R.,Vanderbilt University | Bhuva B.L.,Vanderbilt University | Hooten N.C.,Vanderbilt University | And 5 more authors.
IEEE Transactions on Nuclear Science | Year: 2011

Pulse widths of single-event transients produced by alpha particles in a 65-nm bulk CMOS technology are reported. The experimental setup and calibration of the alpha particle experiment is described in detail. A focused-ion beam is also utilized to explore how pulse broadening in the test circuit impacts the alpha particle SET measurements. The results of this work show that alpha particles are able to induce transient signals with a width of about 25 ps in this technology. © 2011 IEEE.

Jagannathan S.,Vanderbilt University | Gadlage M.J.,NAVSEA Crane | Bhuva B.L.,Vanderbilt University | Schrimpf R.D.,Vanderbilt University | And 4 more authors.
IEEE Transactions on Nuclear Science | Year: 2010

A novel circuit design for separating single-event transients due to N-hits and P-hits is described. Measurement results obtained from a 65 nm technology using heavy-ions show different dominant mechanisms for charge collection for P-hits and N-hits. The data collected represent the first such separation of SET pulse widths for 65 nm bulk CMOS technology. For low LET particles, N-hit transients are longer, but for high LET particles, P-hit transients are longer. N-well depth and the parasitic bipolar effect are shown to be the most important parameters affecting transient pulse widths. © 2010 IEEE.

Gadlage M.J.,NAVSEA Crane | Ahlbin J.R.,Vanderbilt University | Narasimham B.,Broadcom Corporation | Bhuva B.L.,Vanderbilt University | And 2 more authors.
IEEE Transactions on Device and Materials Reliability | Year: 2011

In this paper, heavy-ion-induced single-event transient (SET) pulsewidths measured in a 65-nm bulk CMOS technology at temperatures ranging from 25 ° C to 100° with an autonomous SET capture circuit are presented. The experimental results for the SETs induced in two different inverter chain circuits indicate an increase in the average SET pulsewidth as a function of the operating temperature. Unique SET test structures were also designed to differentiate between SETs induced in an nMOS transistor and those induced in a pMOS transistor. The SET widths induced in a pMOS transistor increase more with temperature than the SETs induced in an nMOS transistor. © 2006 IEEE.

Blaine R.W.,Vanderbilt University | Armstrong S.E.,NAVSEA Crane | Kauppila J.S.,Vanderbilt University | Atkinson N.M.,Vanderbilt University | And 3 more authors.
IEEE Transactions on Nuclear Science | Year: 2011

A novel radiation-hardened-by-design (RHBD) technique that utilizes charge sharing to mitigate single-event voltage transients is employed to harden bias circuits. Sensitive node active charge cancellation (SNACC) compensates for injected charge at critical nodes in analog and mixed-signal circuits by combining layout techniques to enhance charge sharing with additional current mirror circuitry. The SNACC technique is verified with a bootstrap current source using simulations in a 90-nm CMOS process. Reductions of approximately 66% in transient amplitude and 62% in transient duration are observed for 60-degree single-event strikes with an LET of 40 MeV*cm 2/mg. © 2011 IEEE.

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