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El Segundo, CALIFORNIA, United States

The Navitas College of Public Safety is an Australian owned independent tertiary education provider of courses accredited by the Victorian Department of Education and Training. The current student population numbers around 500. The most popular degree offered by the institution is a Bachelor of Social Science in criminal justice.Navitas College of Public Safety was founded in 1990 as the Australian Institute of Public Safety . It has been part of the Navitas Group since July 2008. NCPS has built a reputation as a specialist educator in safety, security and criminal justice. Wikipedia.


Patent
Navitas | Date: 2015-09-17

A semiconductor device is disclosed. The device includes a substrate including GaN, a two dimensional electron gas (2DEG) inducing layer on the substrate, and a lateral transistor on the 2DEG inducing layer. The lateral transistor includes source and drain contacts to the 2DEG inducing layer, a gate stack between the source and drain contacts, and a field plate between the gate and the drain contact. The device also includes one or more insulation layers on the 2DEG inducing layer, where the field plate is spaced apart from the 2DEG inducing layer by the insulation layers, and a conductor on the insulation layers, where a first portion of the conductor is spaced apart from the 2DEG inducing layer by the insulation layers by a distance less than 200 nm.


Patent
Navitas | Date: 2015-06-02

GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.


Patent
Navitas | Date: 2015-10-07

GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.


GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.


Patent
Navitas | Date: 2015-06-11

An electronic circuit is disclosed. The electronic circuit includes a substrate having GaN, and a power switch formed on the substrate and including a first control gate and a first source. The electronic circuit also includes a drive circuit formed on the substrate and including an output coupled to the first control gate, and a power supply having a supply voltage and coupled to the drive circuit, where the output can be driven to the supply voltage.

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