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Sun Y.,China Academy of Building Research | Sun Y.,National Research Center for Glass Processing | Sun Y.,State Key Laboratory for Green Building Materials | Wang H.,China Academy of Building Research | And 2 more authors.
Hangkong Cailiao Xuebao/Journal of Aeronautical Materials | Year: 2015

SiNx films were deposited by RF reactive magnetron sputtering as the dielectric layer in Ag-based transparent conductive films with D/M/D (dielectric/metal/dielectric) structure. The influence of power, pressure, and nitrogen flow on optical constants was investigated. The results show that the deposited film is amorphous. Its optical constants are in normal dispersion relation in the wavelength scale of 300-2500nm. Ellipsometry measurement and fitting by Cauchy model indicate that the refraction index decreases with the increase of power, pressure and N2 flow. The refraction index of 2.02 and extinction coefficient of 0 are obtained for SiNx film under optimum sputtered parameters (300W, 0.16Pa, and flow rate of N2 and Ar is 1:1), which is most close to the optical constants of Si3N4 film with a stoichiometric ratio. Finally, the SiNx film with the optimum thickness of 44nm is deposited under the optimum sputtered parameter as the dielectric layer of 20nm Ag film. The transmittance of Ag film increases from 29.17% to 55.01% when the selected SiNx is implemented as the upper layer, while the transmittance further increases to 66.12% when SiNx acts as both upper and lower layer. ©, 2015, Chinese Journal of Aeronautics. All right reserved.


Sun Y.,China Academy of Building Research | Sun Y.,National Research Center for Glass Processing | Sun Y.,State Key Laboratory for Green Building Materials | Wang H.,China Academy of Building Research | And 2 more authors.
Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | Year: 2015

Glass substrates were pre-cleaned with dissociated argon and oxygen using an anode layer linear ion source. The changes of g glass surfaces before and after ion beam treatment were analyzed, and the effects of gas species and power voltage on the surface modification of the glass were investigated. The results show that ion beam treatment has an etching effect on the glass surface. The etching rate of O ion beam is lower than that of Ar ion beam, and becomes greater when the power voltage increases. The ellipsometry results indicate that the Brewster angle of glass becomes greater and the elliptically polarized spectrum near the Brewster angle changes after ion beam treatment due to the increase of surface refraction index, arising from the existence of optically denser medium caused by ion beam according to the modeling analysis. © 2015, Chinese Ceramic Society. All right reserved.


Liu C.-Y.,China Academy of Building Research | Liu C.-Y.,National Research Center for Glass Processing | Liu C.-Y.,State Key Laboratory of Green Building Materials | Chen W.,China Academy of Building Research | And 8 more authors.
Gongneng Cailiao/Journal of Functional Materials | Year: 2015

Transparent conductive aluminum-doped zinc oxide ( AZO) films were deposited on glass substrates by RF magnetron sputtering from ZnO:3wt% Al2O3 ceramic target. The films obtained were characterized and analyzed by XRD, SEM, four-point probes, ultraviolet-visible light spectrophotometer. The dependence of argon gas pressure on the structure, morphology, electrical and optical properties were investigated. The argon sputtering pressure was varied between 0.3 and 1.2 Pa. The XRD analysis indicated that AZO films deposited under various argon gas pressures were a polycrystalline wurtzite structure with a [002] preferred orientation. The lowest resistivity was 6.7×10-4 Ω·cm (sheet resistance=11.2 Ω/□ for a thickness=600 nm) which was obtained at an argon sputtering pressure of 0.3 Pa. The average transmittance was over 85% in the visible range for all samples. ©, 2015, Journal of Functional Materials. All right reserved.


Liu C.Y.,China Academy of Building Research | Liu C.Y.,National Research Center for Glass Processing | He F.,Wuhan University of Technology | Zhang Y.F.,China Academy of Building Research | And 6 more authors.
Materials Technology | Year: 2015

Transparent conductive aluminium doped zinc oxide (ZnO: Al, AZO) films have been prepared on glass substrate by pulsed direct current reactive magnetron sputtering at room temperature. The dependence of oxygen partial pressure on the optical, electrical and structural properties was investigated. The oxygen partial pressure was accurately controlled by a closed loop SpeedFlo controller with a λ sensor. X-ray diffraction analysis indicated that the AZO films deposited at various oxygen partial pressures presented a polycrystalline wurtzite structure with a (002) preferred orientation perpendicular to the substrates. The densely packed AZO films with columnar structure were observed on the plan view by scanning electron microscope. The AZO film that was deposited at oxygen partial pressure of 3·36610-2 Pa has superior performance with minimal resistivity of 1·14610-3V cm. Optical transmittance was obtained ∼80% in the visible region. © 2015 W. S. Maney & Son Ltd.


Yan N.,China Academy of Building Research | Yan N.,National Research Center for Glass Processing | Yan N.,State Key Laboratory of Green Building Materials | Wang H.,China Academy of Building Research | And 7 more authors.
Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | Year: 2013

Al-doped ZnO (AZO) transparent conductive films on glass substrates were prepared via pulsed DC reactive magnetron sputtering at room temperature. The oxygen partial pressure was controlled by a closed-loop controller with a λ-sensor. The dependence of oxygen partial pressure on the optical, electrical, and structural properties was investigated. The XRD analysis indicated that AZO films deposited under various oxygen partial pressures were a polycrystalline wurtzite structure with a [002] preferred orientation. The dense AZO film with columnar growth was observed on the plan-view. The AZO film deposited under 3.36 × 10-2Pa oxygen partial pressure has the superior performance with a minimal resistivity of 1.15 × 10-3Ω·cm, a carrier mobility of 25.8 cm2/(V?s), a carrier concentration of 2.1 × 1020/cm3, and a transmittance of 79.1% in the visible light range. The direct band gap increases from 3.49 eV to 3.72 eV as the carrier concentration increases from 1.03 × 1020/cm3 to 3.64 × 1020/cm3.

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