National Photovoltaic Products Quality Supervision and Inspection Center

Chengdu, China

National Photovoltaic Products Quality Supervision and Inspection Center

Chengdu, China
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He J.-X.,Sichuan University | Wu L.-L.,Sichuan University | Xia G.-P.,Sichuan University | Xia G.-P.,National Photovoltaic Products Quality Supervision and Inspection Center | And 6 more authors.
Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices | Year: 2010

The Al/Sb multi-layer thin films were prepared by magnetron sputtering method. The structural, optical and electrical properties of the films before and after annealing have been studied with X-ray diffraction (XRD), X-ray fluorescence (XRF), Hall effect, the temperature dependence of the film dark conductivity and UV-Vis transmission spectra. The XRD results showed that only the Sb polycrystalline peaks were observed in as-deposited films while Al existed in amorphous state. After annealing at 500°C, the films showed AlSb peaks with (111) preferred orientation, which suggested that Al and Sb atoms have combined to form AlSb by inter diffusion. The measurement results of Hall effect indicated that the prepared AlSb films were p-type semiconductors with the carrier concentration of 10 19 cm -3. The energy band-gap of the AlSb films obtained from UV-Vis data were about1. 64eV. The temperature dependence of the film conductivity showed two stages. In the heating process from 30°C to 110°C, the conductivity of the film increased slowly with the temperature. In the stage from 110°C to 260°C, the film conductivity increased more quickly with the temperature. The calculated conductivity activation energy was 0.01eV and 0.11eV, respectively. This result had close relationship with the structural changes of the multi-layer Al/Sb films in the heating process. The obvious photovoltaic effect has been observed in TCO/CdS/AlSb/ZnTe:Cu/Au devices, which demonstrated the potential of AlSb as the absorber layer in solar cells.


He J.-X.,Sichuan University | Wu L.-L.,Sichuan University | Zheng J.-G.,Sichuan University | Xia G.-P.,Sichuan University | And 5 more authors.
Gongneng Cailiao/Journal of Functional Materials | Year: 2010

The Al-Sb multi-layer films were prepared by magnetron sputtering method, and that samples of different atomic ratio were obtained through adjustment of Al and Sb sub-layer thickness and number, and then annealed in vaccum. The structural and electrical properties of the films before and after annealing have been studied with X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscope (SEM), Metallogragh, Hall effect and Auger electron spectrometer. The results showed that only the Sb peaks were observed in as-deposited films. After annealing at 500°C, the P-type AlSb ploycrystalline films were obtaied by combination of Al and Sb elements, and with (111) preferred orientation. Also, the samples occurred partial damage in excess of 600°C annealing. The deliquescence phenomenon of films was observed and analyzed with step profiler microcamera and auger depth profilling, and gives some methods to improve.


Chen H.-L.,Southwest Jiaotong University | Hu S.-C.,Southwest Jiaotong University | Wang N.,National Photovoltaic Products Quality Supervision and Inspection Center | Lin Z.-J.,Southwest Jiaotong University | And 5 more authors.
Gongneng Cailiao/Journal of Functional Materials | Year: 2013

As the power increases, LED (light emitting diode) devices appear much higher junction temperature. Furthermore, the reliability and working life will both be obviously reduced with the increase of junction temperature. So, heat dissipation technology and materials with high efficiency, low cost and high reliability are very important to design and prepare high-power LED devices. The progress of the heat dissipation technology and materials in the area of high-power LED device is reviewed in this paper from the following three aspects, design method of chip structure, auxiliary heat dissipation technologies and devices, and a series of heat dissipation materials used in the encapsulation area of LED devices.

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