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Teng L.-F.,National Chiao Tung University | Liu P.-T.,National Chiao Tung University | Lo Y.-J.,National Chiao Tung University | Lee Y.-J.,National Nano Device Laboratories
Applied Physics Letters | Year: 2012

By using microwave annealing technology instead of thermal furnace annealing, this work elucidates the electrical characteristics of amorphous InGaZnO thin film transistor (a-IGZO TFT) with a carrier mobility of 13.5cm 2/Vs, threshold voltage of 3.28V, and subthreshold swing of 0.43V/decade. This TFT performance with microwave annealing of 100s is well competitive with its counterpart with furnace annealing at 450°C for 1h. A physical mechanism for the electrical improvement is also deduced. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for amorphous oxide in semiconductor TFT manufacturing. © 2012 American Institute of Physics. Source


Wu H.-C.,National Chiao Tung University | Chien C.-H.,National Chiao Tung University | Chien C.-H.,National Nano Device Laboratories
Applied Physics Letters | Year: 2013

This work demonstrates In-Ga-Zn-O (IGZO) as source and drain electrodes in IGZO-thin film transistors (TFTs). The fabricated TFT depicts excellent electrical properties; its mobility is 18.02 (cm2/V s), threshold voltage (Vth) is 0.3 (V), on/off ratio is 1.63 × 108 and subthreshold swing (S.S.) is 239 (mV/decade). We find using rapid thermal annealing treatment can convert IGZO into an effective conductor, and the transparency of IGZO remained almost unchanged. We also find sufficient thermal budget is needed for getting stable transfer curve and output characteristic; otherwise, current fluctuation in on-state can be easily observed. With IGZO electrodes, fully transparent IGZO-TFTs can be thus realized on a glass substrate. © 2013 American Institute of Physics. Source


Lu M.-P.,National Nano Device Laboratories | Lu M.-Y.,National Chung Cheng University | Chen L.-J.,National Tsing Hua University
Advanced Functional Materials | Year: 2014

Persistent challenges in the nanofabrication of optoelectronic memory elements with ready size-scalability, multibit data storage, and ultralow optical writing energy have limited progress toward the construction of optical data storage/buffering elements in high-density photonic-electronic circuits. Here, a multibit programmable optoelectronic nanowire (NW) memory is described that operates with an ultralow optical writing energy [ca. 180 aJ bit -1 (ca. 330 photons bit-1)] and a low standby power consumption (<1 pW) at room temperature. In this system, photoionized charged defects behave as surface trapped charges to achieve the electrical memory effect. As a result of the high surface electric field, the rate of dissociation of the photoexcited charge is amplified, thereby decreasing the optical writing energy. Moreover, the extremely high dynamic photoconductive gain (ca. 10 10) makes it possible to write multibit optical data bit-by-bit into the NW. These findings should open new opportunities in next-generation multifunctional nanochips for optical data storage/buffering, optical data processing, and optical sensing purposes. A multibit programmable optoelectronic nanowire (NW) memory operates with an ultralow optical writing energy (ca. 330 photons bit-1) at room temperature. In this system, photoionized charged defects behave as surface trapped charges to achieve the electrical memory effect. The extremely high dynamic photoconductive gain (ca. 10 10) makes it possible to write multibit optical data bit-by-bit into the NW. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Lu M.-P.,National Nano Device Laboratories
Physical Review B - Condensed Matter and Materials Physics | Year: 2012

Charges trapped in the gate dielectric and acting as long-range scatterers can have a significant effect on carrier transport in graphene-based nanodevices. In this study, we theoretically investigated the charge capture kinetics of short-distance channel-defect interactions in graphene nanoribbon nanodevices by employing the nonradiative multiphonon theory in conjunction with the Coulomb energy (ΔE). The peaks that emerged from the electron capture rate strongly correlated with the singularity characteristics of a one-dimensional (1D) density of states. Furthermore, we elaborate herein on how the value of ΔE plays a decisive role in determining the capture kinetics for the trapping of channel carriers in the interface dielectric defects in 1D nanodevices. © 2012 American Physical Society. Source


Kuo Y.-Y.,National Chiao Tung University | Chien C.-H.,National Chiao Tung University | Chien C.-H.,National Nano Device Laboratories
Electrochimica Acta | Year: 2013

A sinter-free method to transfer anodized TiO2 nanotube-arrays to a polyethylene terephthalate (PET) sheet is proposed. Since the anodized nanotube-array was crystallized independently before transferring to the PET, the internal charge transport resistance and the charge recombination rate are unchanged for the nanotubes on the PET sheet, and no high temperature sintering process is required. With hydrothermal treatment, the dye sensitized solar cell fabricated utilizing a low temperature bonded nanotube/PET as a photoelectrode exhibits a power conversion efficiency of 5.41%, which is only 0.87% lower than the power conversion efficiency of the solar cell using nanotubes bonded on a conductive glass through high temperature processes. © 2013 Elsevier Ltd. All rights reserved. Source

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