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Luo X.,University of Electronic Science and Technology of China | Wang Y.,University of Electronic Science and Technology of China | Deng H.,Intel Corporation | Fan J.,University of Electronic Science and Technology of China | And 2 more authors.
IEEE Transactions on Electron Devices | Year: 2010

A high-voltage lateral double diffused metaloxidesemiconductor transistor on partial silicon on insulator (PSOI) with a buried low-k dielectric (LK PSOI) is proposed. The low-k value enhances the electric field strength in the dielectric (EI). The Si window not only makes the substrate share the breakdown voltage (BV) and modulates the field distribution in the SOI layer but also alleviates the self-heating effect. Compared with those of the conventional PSOI, the EI and BV of LK PSOI with kI=2 are enhanced by 74% and 19%, respectively. © 2009 IEEE. Source


Luo X.,University of Electronic Science and Technology of China | Luo X.,University of Cambridge | Udrea F.,University of Cambridge | Wang Y.,University of Electronic Science and Technology of China | And 2 more authors.
IEEE Electron Device Letters | Year: 2010

A power LDMOS on partial silicon on insulator (PSOI) with a variable low-κ dielectric (VLKD) buried layer and a buried p (BP) layer is proposed (VLKD BPSOI). At a low κ value, the electric field strength in the buried dielectric (EI) is enhanced, and a Si window makes the substrate share the vertical voltage drop, leading to a high vertical breakdown voltage (BV). Moreover, three interface field peaks are introduced by the BP, the Si window, and the VLKD, which modulate the fields in the SOI layer, the VLKD layer, and the substrate; consequently, a high BV is obtained. Furthermore, the BP reduces the specific on-resistance (Ron), and the Si window alleviates the self-heating effect (SHE). The BV for VLKD BPSOI is enhanced by 34.5%, and Ron is decreased by 26.6%, compared with those for the conventional PSOI, and VLKD BPSOI also maintains a low SHE. © 2006 IEEE. Source


Zhou X.,Sichuan Institute of Solid State Circuits | Xu S.,National Laboratory of Analog Integrated Circuits | Zhang Z.,Chongqing University
Applied Mechanics and Materials | Year: 2012

A readout circuit with high sensitivity and high linearity is proposed in this paper. The applied pressure is sensed by Wheatstone bridge which can reduce the adverse effect of temperature. As the applied pressure changes from 15kPa to 115kPa, the sensitivity of the bridge is 0.36mV/kPa. The current source of the circuit can provide a current with a positive coefficient which can compensate for the inherent high-temperature loss of sensitivity of the Piezoresistive Bridge. Three high-precision operational amplifiers with symmetrical input and rail-to-rail output are used to process the output signal of the bridge. It can provide high CMRR with 123.8dB, open loop gain is 110dB and the output swings from 36.41mV to 4.953mV as the power supply is 5V. A thin film resistors network can compensate for the zero pressure offset and sensitivity by trimming. The high sensitivity of the bridge and the high linearity of the proposed circuit make the readout circuit suitable for monolithically integrated pressure sensor. © (2012) Trans Tech Publications, Switzerland. Source


Zhang J.,National Laboratory of Analog Integrated Circuits | Tang Z.,National Laboratory of Analog Integrated Circuits
2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 | Year: 2014

In this paper, an approach of developing the SOI CMOS vertical heterojunction bipolar transistor (HBT) is presented. With a novel all-depletion collector structure, the compatibility of HBT with MOS device in structure and process can be realized on a very thin SOI film, thus providing a new solution to producing high-performance integrated circuits. © 2014 IEEE. Source


Wen J.,Sichuan University | Shi R.,Sichuan University | Shi R.,Key Laboratory of Microelectronics Technology of Sichuan Province | Gong M.,Sichuan University | And 5 more authors.
Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams | Year: 2011

The effects of gamma irradiation on collector current and Early voltage of silicon-germanium (SiGe) heterojunction bipolar transistor are investigated. After 104 Gy(Si) total dose irradiation, increases of the collector current and Early voltage are observed. Besides, both the threshold voltages and the breakdown voltages of the emitter-base and the collector-base junctions decrease. All the changes are thought to be mainly due to the reduction of effective carrier concentrations in the emitter and collector regions caused by radiation-induced defects. Source

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