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Wang Z.,University of Electronic Science and Technology of China | Zhang Y.,University of Electronic Science and Technology of China | Zhang Y.,National Key Laboratory of Monolithic Integrated Circuits and Modules | Xu R.,University of Electronic Science and Technology of China | Lin W.,University of Electronic Science and Technology of China
Journal of Infrared, Millimeter, and Terahertz Waves | Year: 2011

In this paper, a shielded dielectric multiple-slot waveguide is presented and demonstrated by theoretical calculation at terahertz frequencies. Some electromagnetic analysis of waveguide currently employed simplified intrinsic frequency dispersion models for the bulk conductivity of normal metals used in terahertz wave structures. This paper has compared various conductivity models for gold between 0.1-3 THz. The dielectric loss, conductor loss, total propagation loss with different conductivity models and E-field distribution has been obtained by numerically solving the complex eigenvalue equation for the propagation constant. The analysis results are in agreement with the assumption of R. Sun et al. and the experimental results obtained by H. Sun et al. The propagation loss deviation between various models is less than 3% at 0.2-0.5 THz. Comparisons with other slot waveguides are also given. The analysis results show that the proposed line has lower propagation attenuation than other slot waveguides. © Springer Science+Business Media, LLC 2011. Source


Jiang G.,Nanjing Electronic Devices Institute | Kuang L.,Nanjing Electronic Devices Institute | Zhu J.,Nanjing Electronic Devices Institute | Zhu J.,National Key Laboratory of Monolithic Integrated Circuits and Modules
Key Engineering Materials | Year: 2015

TSV is a new technology to make interconnections between chips by creating vertical wafer-to-wafer vias. The application of ICP (inductively coupled plasma) dry etching to make TSV is discussed in this paper. Starting with hardware conditions of the equipment, a large number of experiments were conducted to test the process parameters combining with the fundamentals of dry etching. By constantly modifying the parameters to optimize the process, a final result of TSV with the width of 2.62um, depth of 63.5um, verticality of 89.8°and scallop of 70.3nm was realized in this paper. © (2015) Trans Tech Publications, Switzerland. Source


Zhao W.,University of Electronic Science and Technology of China | Zhang Y.,University of Electronic Science and Technology of China | Zhang Y.,National Key Laboratory of Monolithic Integrated Circuits and Modules | Zhan M.,University of Electronic Science and Technology of China | And 2 more authors.
Journal of Infrared, Millimeter, and Terahertz Waves | Year: 2012

In this paper, a simple method for millimeter-wave finline balanced mixer design using three-dimensional field simulation software has been proposed. The method can be widely used to design the diode-based circuits, especially for the circuit structures with orthogonal field in some specific hybrid integrated circuits which are unavailable to be designed using the circuit simulator. In these circuits, the power directly at diodes is correlated to the input reflection coefficient. The diodes mounted on the finline circuits are defined as impedance boundary in the commercial computer-aided design (CAD) tool High Frequency Structure Simulator (HFSS) model, and hence simulation with the use of HFSS can be implemented to optimize the input matching network of the finline circuits for transferring maximum power to the diodes. Two finline balanced mixers at U-band using commercial GaAs Schottky diodes have been designed and fabricated to validate this method. Matching structures at the radio frequency (RF) port have been employed for a better return loss and a lower conversion loss. Experiment results are presented and show good agreement with simulation data. The proposed method has proven to be useful for the design of millimeter-wave mixers in finline technique. © 2011 Springer Science+Business Media, LLC. Source


Hou Z.-H.,Nanjing Electronic Devices Institute | Zhu F.,Nanjing Electronic Devices Institute | Yu Y.-W.,Nanjing Electronic Devices Institute | Yu Y.-W.,National Key Laboratory of Monolithic Integrated Circuits and Modules | And 3 more authors.
Nami Jishu yu Jingmi Gongcheng/Nanotechnology and Precision Engineering | Year: 2012

A DC-contact series RF MEMS switch for millimeter-wave application was presented. To obtain high isolation in millimeter wave band, the in-and out-port of the switch was designed as long and thin shape which reduced the coupling capacitance between the in-and out-port. To obtain high contact stability and reduce pull-down voltage, an improved crab-shape structure was used as the bridge structure. The RF MEMS switch was fabricated with gold surface microfabrication process in the Nanjing Electronic Devices Institute. The measurement result showed that the insertion loss was -0.3 dB at 30 GHz, and the isolation was -20 dB at 30 GHz. In the range of 20-40 GHz, the insertion loss was better than -0.5 dB, and the isolation was better than -20 dB. Source


Zonglei J.,Nanjing Electronic Devices Institute | Jian Z.,Nanjing Electronic Devices Institute | Jian Z.,National Key Laboratory of Monolithic Integrated Circuits and Modules
Key Engineering Materials | Year: 2015

The mechanical properties of SiC thin films deposited by chemical vapor deposition process on silicon substrate are studied using nanoindentation techniques. The SiC thin films are of three different thicknesses: 1.6μm, 4.5μm, 9μm. In this study, nanoindentation method is preferred due to its reliability and accuracy on determining mechanical properties from indentation load-displacement data. The mechanical properties of elastic modulus and hardness are characterized. 1.6μm SiC thin film has the following values: E=345.73Gpa, H=33.71Gpa; 4.5μm SiC thin film has the following values: E=170.18Gpa, H=10.33Gpa; 9μm SiC thin film: E=167.96Gpa, H=9.48Gpa; © (2015) Trans Tech Publications, Switzerland. Source

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