National Key Laboratory of Monolithic Integrated Circuits and Modules

Nanjing, China

National Key Laboratory of Monolithic Integrated Circuits and Modules

Nanjing, China
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Wang Z.,University of Electronic Science and Technology of China | Wang Z.,National Key Laboratory of Monolithic Integrated Circuits and Modules | Zhang Y.,University of Electronic Science and Technology of China | Zhang Y.,National Key Laboratory of Monolithic Integrated Circuits and Modules | And 2 more authors.
Optik | Year: 2012

In this paper, THz Sommerfeld wave propagation on dielectrically coated cylindrical metal wire and conical metal wire is presented. The propagation characteristics of single wire are largely related to the characteristics of material being used, which may change significantly with the temperature variation. Then, the surface wave propagation along the THz wire waveguide is investigated by the numerical calculation from 0.1 to 1 THz at different temperature. The influences of different conductivity and different temperature on the propagation characteristics of the dielectrically coated cylindrical metal wire and conical metal wire are discussed, including electric field distribution, propagation loss and energy coupling characteristic. The analysis results release a fundamental characteristic for describing the THz surface wave propagation on single wire at different temperature, and moreover, the analysis results also suggest that the single wire is a promising THz waveguide and very useful for the space sensing at cryogenic temperature in future. © 2011 Elsevier GmbH.


Wang Z.,University of Electronic Science and Technology of China | Wang Z.,National Key Laboratory of Monolithic Integrated Circuits and Modules | Ye L.,University of Electronic Science and Technology of China | Zhang Y.,University of Electronic Science and Technology of China | And 3 more authors.
Journal of Electromagnetic Waves and Applications | Year: 2011

In this paper, an investigation of parallel-plate dielectric waveguide is proposed by theoretical calculation at terahertz frequencies. In the previous study, the electromagnetic analysis of waveguide employed simplified intrinsic frequency dispersion models - classical skin-effect model for the bulk conductivity of normal metals used in terahertz wave structures. To analyze the deviation between various metal conductivity models, the accurate classical relaxation-effect frequency dispersion model and the traditional and much simpler classical skin-effect model are used to analyze the propagation characteristic of the proposed waveguide. The propagation loss with different conductivity models has been obtained by numerically solving the complex eigenvalue equation for the propagation constant. The energy coupling characteristic of this waveguide is also proposed. The conductor loss deviation between the classical relaxation-effect model and the classical skin-effect model varies from 1.1% to 6.4%, and the total loss varies from 1.1% to 5.4% at 0.1-1 THz. The analysis results are very useful for the development of terahertz power propagation, spectroscopy and detectors. © 2011 VSP.


Wang Z.,University of Electronic Science and Technology of China | Zhang Y.,University of Electronic Science and Technology of China | Zhang Y.,National Key Laboratory of Monolithic Integrated Circuits and Modules | Xu R.,University of Electronic Science and Technology of China | Lin W.,University of Electronic Science and Technology of China
Journal of Infrared, Millimeter, and Terahertz Waves | Year: 2011

In this paper, a shielded dielectric multiple-slot waveguide is presented and demonstrated by theoretical calculation at terahertz frequencies. Some electromagnetic analysis of waveguide currently employed simplified intrinsic frequency dispersion models for the bulk conductivity of normal metals used in terahertz wave structures. This paper has compared various conductivity models for gold between 0.1-3 THz. The dielectric loss, conductor loss, total propagation loss with different conductivity models and E-field distribution has been obtained by numerically solving the complex eigenvalue equation for the propagation constant. The analysis results are in agreement with the assumption of R. Sun et al. and the experimental results obtained by H. Sun et al. The propagation loss deviation between various models is less than 3% at 0.2-0.5 THz. Comparisons with other slot waveguides are also given. The analysis results show that the proposed line has lower propagation attenuation than other slot waveguides. © Springer Science+Business Media, LLC 2011.


Zhao W.,University of Electronic Science and Technology of China | Zhang Y.,University of Electronic Science and Technology of China | Zhang Y.,National Key Laboratory of Monolithic Integrated Circuits and Modules | Zhan M.,University of Electronic Science and Technology of China | And 2 more authors.
Journal of Infrared, Millimeter, and Terahertz Waves | Year: 2012

In this paper, a simple method for millimeter-wave finline balanced mixer design using three-dimensional field simulation software has been proposed. The method can be widely used to design the diode-based circuits, especially for the circuit structures with orthogonal field in some specific hybrid integrated circuits which are unavailable to be designed using the circuit simulator. In these circuits, the power directly at diodes is correlated to the input reflection coefficient. The diodes mounted on the finline circuits are defined as impedance boundary in the commercial computer-aided design (CAD) tool High Frequency Structure Simulator (HFSS) model, and hence simulation with the use of HFSS can be implemented to optimize the input matching network of the finline circuits for transferring maximum power to the diodes. Two finline balanced mixers at U-band using commercial GaAs Schottky diodes have been designed and fabricated to validate this method. Matching structures at the radio frequency (RF) port have been employed for a better return loss and a lower conversion loss. Experiment results are presented and show good agreement with simulation data. The proposed method has proven to be useful for the design of millimeter-wave mixers in finline technique. © 2011 Springer Science+Business Media, LLC.


Yu Y.-W.,Nanjing University | Yu Y.-W.,National Key Laboratory of Monolithic Integrated Circuits and Modules | Yu Y.-W.,Nanjing Electronic Devices Institute | Zhu J.,National Key Laboratory of Monolithic Integrated Circuits and Modules | And 3 more authors.
Key Engineering Materials | Year: 2011

This paper presents a bandpass switchable filter for 6-11GHz applications which is housed in a machined aluminum chassis. The circuit consists of three fixed interdigital microstrip filters and two single-pole triple-throw (SP3T) microelectromechanical systems (MEMS) switching networks achieved by the individual series-shunt MEMS switch chips. A tuning range of 36.6% was achieved from 6.7 to 9.7 GHz with a fractional bandwidth of 21.1±2.7%, with low mid-band insertion loss ranging from 2.6 dB to 3.0 dB. Rejection is below -50 dB in most cases and skirt slopes are more than 50 dB/GHz at both lower and higher stopband. © (2011) Trans Tech Publications.


Hou Z.-H.,Nanjing Electronic Devices Institute | Zhu F.,Nanjing Electronic Devices Institute | Yu Y.-W.,Nanjing Electronic Devices Institute | Yu Y.-W.,National Key Laboratory of Monolithic Integrated Circuits and Modules | And 3 more authors.
Nami Jishu yu Jingmi Gongcheng/Nanotechnology and Precision Engineering | Year: 2012

A DC-contact series RF MEMS switch for millimeter-wave application was presented. To obtain high isolation in millimeter wave band, the in-and out-port of the switch was designed as long and thin shape which reduced the coupling capacitance between the in-and out-port. To obtain high contact stability and reduce pull-down voltage, an improved crab-shape structure was used as the bridge structure. The RF MEMS switch was fabricated with gold surface microfabrication process in the Nanjing Electronic Devices Institute. The measurement result showed that the insertion loss was -0.3 dB at 30 GHz, and the isolation was -20 dB at 30 GHz. In the range of 20-40 GHz, the insertion loss was better than -0.5 dB, and the isolation was better than -20 dB.


Zonglei J.,Nanjing Electronic Devices Institute | Jian Z.,Nanjing Electronic Devices Institute | Jian Z.,National Key Laboratory of Monolithic Integrated Circuits and Modules
Key Engineering Materials | Year: 2015

The mechanical properties of SiC thin films deposited by chemical vapor deposition process on silicon substrate are studied using nanoindentation techniques. The SiC thin films are of three different thicknesses: 1.6μm, 4.5μm, 9μm. In this study, nanoindentation method is preferred due to its reliability and accuracy on determining mechanical properties from indentation load-displacement data. The mechanical properties of elastic modulus and hardness are characterized. 1.6μm SiC thin film has the following values: E=345.73Gpa, H=33.71Gpa; 4.5μm SiC thin film has the following values: E=170.18Gpa, H=10.33Gpa; 9μm SiC thin film: E=167.96Gpa, H=9.48Gpa; © (2015) Trans Tech Publications, Switzerland.


Jiang G.,Nanjing Electronic Devices Institute | Kuang L.,Nanjing Electronic Devices Institute | Zhu J.,Nanjing Electronic Devices Institute | Zhu J.,National Key Laboratory of Monolithic Integrated Circuits and Modules
Key Engineering Materials | Year: 2015

TSV is a new technology to make interconnections between chips by creating vertical wafer-to-wafer vias. The application of ICP (inductively coupled plasma) dry etching to make TSV is discussed in this paper. Starting with hardware conditions of the equipment, a large number of experiments were conducted to test the process parameters combining with the fundamentals of dry etching. By constantly modifying the parameters to optimize the process, a final result of TSV with the width of 2.62um, depth of 63.5um, verticality of 89.8°and scallop of 70.3nm was realized in this paper. © (2015) Trans Tech Publications, Switzerland.


Zhong S.,National Key Laboratory of Monolithic Integrated Circuits and Modules | Chen T.,National Key Laboratory of Monolithic Integrated Circuits and Modules | Ren C.,National Key Laboratory of Monolithic Integrated Circuits and Modules | Qian F.,National Key Laboratory of Monolithic Integrated Circuits and Modules | And 2 more authors.
Proceedings of the 2015 IEEE 4th Asia-Pacific Conference on Antennas and Propagation, APCAP 2015 | Year: 2015

In this paper, We research the AlGaN/GaN internal matching technology. Using in-house made four 20mm GaN Power HEMT transistors, the internal matching power HEMT demonstrates a pulse over 180W across the band of 13.7-14.5GHz, an output power more than 200W with a power gain of over 6dB, the power added efficiency (PAE) of 30.47% at 14 GHz, operated at 32V drain bias voltage (Vds) with the pulsed conditions at a duty of 10% with a pulse width of 100us. The package size excluding flange and leads is 17.4mm × 24mm. This is the highest output power in a 100W-class AlGaN/GaN HEMT in that such package at Ku-band to the best of our knowledge. © 2015 IEEE.


Zhu J.,Nanjing Electronic Devices Institute | Zhu J.,National Key Laboratory of Monolithic Integrated Circuits and Modules | Yu Y.,Nanjing Electronic Devices Institute | Yu Y.,National Key Laboratory of Monolithic Integrated Circuits and Modules | And 3 more authors.
Microsystem Technologies | Year: 2010

In this paper, we describe the application of through-silicon via (TSV) interconnects in Radio Frequency Micro-electro-mechanical systems (RF MEMS). Using TSV technologies as grounding connections, a Ku band miniature bandpass filter is designed and fabricated. Measured results show an insertion loss of 1.9 dB and a bandwidth of 20%. The chip size is 9.6 × 4 × 0.4 mm3. Using TSV as interconnections for 3 dimensional millimeter-wave integrated circuits, a silicon micromachined vertical transition with three layers is presented. TSV, alignment, bonding and wafer thinning technologies are used to fabricate the sample. This transition has an insertion loss of less than 6.7 dB from 26 to 34 GHz and its amplitude variation is less than 2 dB. The total size of the chip is 6.3 × 3.2 mm2. © 2010 Springer-Verlag.

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